RoHS 2SA673 2SA673 TRANSISTOR (PNP) D T ,. L TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.4 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol N C O 1 2 3 unless otherwise specified) O Test R T conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -10µA , IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-1 mA , IB=0 -35 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -4 V ICBO VCB= -20 V , IE=0 hFE(1)* VCE=-3V, IC= -10mA 60 hFE(2) VCE=-3 V, IC=-500mA 10 VCEsat * IC= -150mA, IB=-15mA -0.6 V VBE VCE=-3 V, IC=-10mA -0.75 V C E L Collector cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter voltage *Measured using pulse -0.5 µA 320 CLASSIFICATION OF hFE(1) W Rank Range B C D 60-120 100-200 160-320 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]