RoHS 2SC1674 2SC1674 TRANSISTOR (NPN) D T TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current 0.02 A ICM: Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range 3. BASE . 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Test V(BR)CBO R T C E L Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IC N unless otherwise specified) Symbol Collector-base breakdown voltage C ,. L O O conditions MIN MAX UNIT Ic= 100µA , IE=0 30 V IC= 1 mA, IB=0 20 V IE= 100µA, IC=0 4 V Collector cut-off current ICBO VCB= 30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=3V , 0.1 µA DC current gain IC=0 hFE VCE=6 V, IC= 1mA VCE(sat) IC=10 mA, IB= 1 mA 0.3 V VBE(ON) VCE=6 V, IC= 1mA 0.72 V fT VCE=6 V, IC= 1mA Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 1.5 pF Noise figure NF VCE=6V, IC=1mA, f=100MHz, RS=50Ω 5 dB GP VCE=6V,IC=1mA,f=100MHz Collector-emitter saturation voltage E Base-emitter voltage Transition frequency J E W Power gain 40 180 400 MHz 18 dB CLASSIFICATION OF hFE(1) Rank Y GR BL 40-80 60-120 90-180 WEJ ELECTRONIC CO. Http:// www.wej.cn Range E-mail:[email protected]