RoHS 2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR * * D T ,. L Complement to 2SA1015 Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit 1. 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V Collector Current Ic Collector Dissipation Ta=25 * PD 225 Junction Temperature Tj 150 Storage Temperature Tstg mA mW Symbol Min Collector-Base Breakdown Voltage BVcbo 60 Collector-Emitter BVceo 50 Breakdown R T Voltage# Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Icbo Emitter-Base Cutoff Current C E L DC Current Gain BVebo Collector-Emitter Saturation Voltage Iebo Hfe IC -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic 2.4 1.3 O 5.0 N Typ Max 70 Vce(sat) O Unit:mm Test Conditions V Ic=100uA Ie=0 V Ic= 1mA V Ie= 100uA Ic=0 100 nA Vcb= 50V Ie=0 100 nA Veb= 3V Ic= 0 700 0.30 * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle Unit C 1.BASE 2.EMITTER 3.COLLECTOR 0.4 Vcbo 2.9 1.9 0.95 0.95 Collector-Base Voltage Ib=0 Vce= 6V Ic= 2mA V Ic= 100mA Ib= 10mA 2% E DEVICE MARKING: 2SC1815=L6 J E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]