RoHS 2SC388 2SC388 D T ,. L TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 50 mA Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ N C O 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO R T C E L Collector cut-off current O Test conditions MIN TYP MAX UNIT Ic=10µA, IE=0 30 V Ic=5mA, IB=0 25 V IE=10µA, IC=0 4 V ICBO VCB=30V, IE=0 0.1 µA IEBO VEB=3V, IC=0 0.1 µA hFE(1) VCE=12.5V, IC=12.5mA Collector-emitter saturation voltage VCE(sat) IC=15mA, IB=1.5mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=15mA, IB=1.5mA 1.2 V fT VCE=12.5V, IC=12.5mA 300 Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 0.8 2 pF Power Gain Gpe 28 36 dB Emitter cut-off current DC current gain J E E Transition frequency W WEJ ELECTRONIC CO. VCC=12.5V, Ic=12.5mA, f=45MHZ Http:// www.wej.cn 20 200 MHz E-mail:[email protected]