RoHS BAS21LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 250V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C 3 1 2 0.95 2.9 1.9 2.4 1.3 0.95 IC 3 1 2 CATHODE Marking:JS Electro-Optical Characteristics C E L Parameter Reverse breakdown voltage Reverse Voltage leakage current Forward Voltage J E E Diode Capacitance R T Reverse Recovery Time Symbol C 1.BASE 2.EMITTER 3.COLLECTOR 0.4 1. ANODE-CATHODE ANODE D T ,. L O SOT-23 N O Unit:mm 。 (Ta=25 C) Test Condition MIN. V (BR) I R =100 A 250 IR V R =200V 1 VF I F =100mA I F =200mA 1000 1250 mV CD V R =0V 5 pF 50 nS t rr f=1MHz MAX. Unit V W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] A RoHS BAS21LT1 Typical Characteristics FORWARD VOLTAGE (mV) 3500 3000 。 2500 T A =-55 C 2000 。 1500 T A =155 C 1000 。 T A =25 C 0 0.1 0.2 0.5 1 2 5 10 20 N FORWARD VOLTAGE(mA) Forward Voltage R T 7000 6000 REVERSE CURRENT (nA) J E C E L E IC 500 5000 4000 3000 O 50 100 200 C D T ,. L O 。 T A =155 C 6 5 4 3 。 T A =25 C 2 。 1 0 1 2 T A =-55 C 5 10 20 50 100 200 300 REVERSE VOLTAGE(V) Reverse Leakage W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]