RoHS BAV99LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW (Tamb=25 C) Pluse Drain I F : 215 mA Reverse Voltage V R : 70V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C 3 1 0.95 0.95 2.9 1.9 IC N 3 1 2 CATHODE R T Marking:A7 C E L Electro-Optical Characteristics Parameter Symbol C 2.4 1.3 0.4 2 1. ANODE-CATHODE ANODE D T ,. L O SOT-23 O Unit:mm 。 (Ta=25 C) Test Condition MIN. 70 MAX. Reverse breakdown voltage V (BR) I R =100 A Reverse Voltage leakage current IR V R =70V 2.5 I F =1mA 715 I F =10mA 855 I F =50mA 1000 I F =150mA 1250 J E Forward Voltage E Diode Capacitance W Reverse Recovery Time WEJ ELECTRONIC CO. VF CD t rr V R =0V f=1MHz I F =I R =10mA V R =5V R C =100 Http:// www.wej.cn Unit V A mV 1.5 pF 6 nS E-mail:[email protected] BAV99LT1 SWITCHING DIODE I F ,FORWARD CURRENT (mA) 100 10 。 T A =85 C 。 T A =25 C 1.0 。 T A =-40 C 0.1 0.2 0.4 0.6 0.8 1.0 V F ,FORWARD VOLTAGE(VOLTS) IC Forward Voltage N 10 I R ,REVERSE CURRENT ( A) 。 T A =150 C C E L 0.01 0 。 T A =55 C 。 T A =25 C 10 20 30 40 50 V R ,REVERSE VOLTAGE(VOLTS) Leakage Current 0.68 C D ,DIODE CAPACTANCE(pF) W J E R T 。 T A =85 C 0.1 0.001 E O 。 T A =125 C 1.0 C 1.2 D T ,. L O 0.64 0.60 0.56 0.52 0 2 4 6 8 V R ,REVERSE VOLTAGE(VOLTS) Capacitance WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]