RoHS BC184-B-C BC184, B, C TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.35 Collector current ICM: 0.1 Collector-base voltage V(BR)CBO: 45 D T ,. L TO-92 1. COLLECTOR W (Tamb=25℃) 2. BASE A 3. EMITTER V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter N 1 2 3 unless otherwise specified) Symbol Collector-base breakdown voltage C O O Test conditions MIN MAX UNIT Ic=10µA, IE=0 45 V V(BR)CEO IC= 2mA , IB=0 30 V V(BR)EBO IE=100µA. IC=0 6 V ICBO VCB=30V, IE=0 15 nA ICEO VCE=30V, IB=0 0.1 µA IEBO VEB=4 V, IC=0 15 nA hFE(1) VCE=5V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.6 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=5mA 1.2 V V(BR)CBO R T Collector-emitter breakdown voltage Emitter-base breakdown voltage C E L Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain J E E BC184 BC184B BC184C W Transition frequency WEJ ELECTRONIC CO. 240 240 450 900 500 900 VCE= 5V, IC= 10mA fT 150 f = 100MHz Http:// www.wej.cn E-mail:[email protected] MHz