RoHS BC237/238/239 BC237/238/239 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.35 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range IC TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO C E L Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO E O Test conditions Ic=100µA, IE=0 Ic=2mA, IB=0 BC237 BC238/239 BC237 BC238/239 IE=100µA, IC=0 BC237 BC238/239 VCB=50V, IE=0 BC237 VCB=30V, IE=0 BC238/239 VCE=5V, IC=10µA V 6 5 V BC237B/238B BC237C/238C/239C VCE=5V, IC=100m A 120 120 120 200 380 170 290 500 BC237A 120 BC237B/238B 180 BC237C/238C/239C 300 hFE(3) IC=10mA, IB=0.5mA BC237/238/239 IC=100mA, IB=5mA BC237/239 BC238 Http:// www.wej.cn 15 nA 15 nA 90 270 BC239 WEJ ELECTRONIC CO. 45 25 BC237C/238C/239C BC237A UNIT V BC237A BC237 MAX 50 30 150 hFE(2) VCE(sat) TYP BC237B/238B VCE=5V, IC=2mA W MIN VEB=5V, IC=0 hFE(1) DC current gain Collector-emitter saturation voltage N C O 1 2 3 unless otherwise specified) R T Collector-base breakdown voltage J E D T ,. L TO-92 800 800 220 460 800 0.2 0.6 0.8 E-mail:[email protected] V RoHS Base-emitter saturation voltage VBE(sat) IC=10mA, IB=0.5mA Base-emitter voltage 0.5 VCE=5V, IC=2mA VBE 0.55 VCE=5V, IC=100mA 100 120 140 BC238 BC239 Transition frequency fT VCE=5V,IC=10mA,f=100MHz BC237 BC238 BC239 IC Collector output capacitance Cob VCB=10V, IE=0, f=1MHz Emitter-base capacitance Cib VEB=0.5V, IC=0, f=1MHz N VCE=5V, Ic=0.2mA, f=1kHZ, Rs=2KΩ Noise figure NF O BC239 C 150 150 150 O 200 240 0.7 V MHz 280 4.5 8 2 R T 4 dB BC238 BC239 2 2 2 10 10 4 C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn pF Pf VCE=5V, Ic=0.2mA, f=1kHZ, Rs=2KΩ, ∆f=200Hz BC237 J E 0.62 0.83 VCE=3V,IC=0.5mA,f=100MHz BC237 V D T ,. L IC=100mA,IB=5mA VCE=5V, IC=0.1mA 0.83 1.05 E-mail:[email protected]