RoHS BC639 BC639 D T ,. L TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 100 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Test R T C E L Collector cut-off current N 1 2 3 unless otherwise specified) Symbol Collector-base breakdown voltage C O conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 100 V Ic= 1mA, IB=0 80 V IE= 100µA, IC=0 5 V ICBO VCB= 30V, IE=0 0.1 µA IEBO VEB= 5V, IC=0 0.1 µA hFE(1) VCE= 2V, IC= 5mA 25 hFE(2) VCE= 2V, IC= 150mA 40 hFE(3) VCE= 2V, IC= 500mA 25 VCE(sat) IC= 500mA, IB= 50mA 0.5 V Base-emitter voltage VBE VCE= 2V, IC= 500mA 1 V Transition frequency fT VCE= 5V, IC= 50mA, Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage 160 100 W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] MHz