RoHS BCW31 FEATURES * Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification ABSOLUTE MAXIMUM RATINGS at Ta=25 Unit 1. Collector-Base Voltage Vcbo 32 V Collector-Emitter Voltage Vceo 32 V Emitter-Base Voltage Veb 5 V Collector Current Ic 100 mA Collector Dissipation Ta=25 * PD 250 mW Junction Temperature Tj 150 Storage Temperature Tstg -65-150 2.9 1.9 2.4 1.3 IC ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Collector-Base Breakdown Voltage BVcbo 32 Collector-Emitter BVceo 32 BVebo 5 Breakdown Min Voltage# Emitter-Base Breakdown Voltage R T Collector Cutoff Current Emitter Cutoff Current C E L Base-Emitter Voltage Collector Capacitance DC Current Gain Collector-Emitter Saturation Voltage E Base-Emitter Saturation Voltage J E Icbo Iebo Vbe W Max N 550 Ic= 2mA Ib=0 V Ie= 100uA Ic=0 100 nA Vcb= 32V Ie=0 10 uA Vcb=32V Ie=0 Tj=100 100 nA Veb=5V Ic=0 700 mV Ic=2mA Vce=5V pF Ie=0 Vcb=10V f=1MHz Vce= 5V Ic= 10uA 220 250 750 Vce= 5V Ic= 2mA mV mV 850 100 F Test Conditions V 210 fT Unit :mm Ic=100uA Ie=0 190 120 Vbe(sat) Unit O V 2.5 110 Vce(sat) Transition Frequency Noise figure O Cob Hfe Typ C 1.GATE 2.SO URCER 3.DRAIE 0.4 Rating 0.95 Symbol 0.95 Characteristic D T ,. L MHz 10 * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% dB Ic= 10mA Ib= 0.5mA Ic=50mA Ib=2.5mA Ic= 10mA Ib= 0.5mA Ic=50mA Ib=2.5mA Vce=5V Ic=10mA f=100MHz Ic=200uA Vce=5V Rs=2k F=1kHz B=200Hz DEVICE MARKING: BCW31=D1t WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]