RoHS BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR D T ,. L GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Unit Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage 1. Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation PD 225 mw 1.8 mW/ 300 mw 2.4 mW/ 2.4 1.3 FR-5 Board(1) Ta=25 Derate above 25 Total Device Dissipation PD IC Alumina Substrate,(2) Ta=25 Derate above 25 Junction Temperature Tj 150 Storage Temperature Tstg -55-150 O ELECTRICAL CHARACTERISTICS at Ta=25 R T Characteristic Collector-Base Voltage Collector-Emitter Voltage C E L Emitter Cutoff Current Collector Cutoff Current E DC Current Gain J E * Symbol V(BR)ceo V(BR)ces Min N Typ Base-Emitter Saturation Voltage Vbe(on) Test Conditions Ic=10mA 30 V Ic=10uA Ic=0 10 uA Veb=5V Ic=0 100 nA Vcb=20V Ie=0 5.0 uA Vcb=20V Ie=0 TA=150 100 Vce(sat) U nit:m m V Icbo Collector-Emitter Saturation Voltage Unit O 25 Iebo HFE Max C 1.GATE 2.SO URCER 3.DRAIE 0.4 Collector-Base Voltage 0.95 Rating 2.9 1.9 Symbol 0.95 Characteristic 600 Ib=0 Vce=1.0V Ic=-100mA 70 Vce=1.0V Ic=-300mA 40 Vce=1.0V Ic=-500mA 620 1.2 mV V Ic=-500mA Ib=-50mA Vbe=1V Ic=500mA 1.Total Device Dissipation : FR=1X0.75X0.062in . 2.Alumina=0.4 X 0.3 X 0.024in.99.5% alumina W DEVICE MARKING: BCX20LT1=U2 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]