UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. 1 TO-251 FEATURES 1 * RDS(ON) = 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability TO-252 1 TO-220 TO-220F SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 50N06L-TA3-T 50N06G-TA3-T 50N06L-TF3-T 50N06G-TF3-T 50N60L-TM3-T 50N60G-TM3-T 50N06L-TN3-R 50N06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source 50N06L-TA3-T Package TO-220 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel (1) R: Tape Reel, T: Tube (1)Packing Type (2)Package Type (3)Lead Plating www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF3: TO-220F, TN3: TO-252, TM3: TO-251 (3) G: Halogen Free, L: Lead Free 1 of 8 QW-R502-088.E 50N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 60 V ±20 V TC = 25°C 50 A Continuous Drain Current ID TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Single Pulsed (Note 3) EAS 480 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO-220 120 W TO-220F 70 W Power Dissipation (TC=25°C) PD TO-251 136 W TO-252 136 W Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.38mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 θJA θJC RATING 62 62 100 100 1.24 1.78 1.1 1.1 UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS IDSS VGS = 0 V, ID = 250 μA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V I = 250 μA, △BVDSS/△TJ D Referenced to 25°C VGS(TH) RDS(ON) VDS = VGS, ID = 250 μA VGS = 10 V, ID = 25 A CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT 60 10 100 -100 0.07 2.0 18 V μA nA nA V/°C 4.0 23 900 1220 430 550 80 100 V mΩ pF pF pF 2 of 8 QW-R502-088.E 50N06 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID =25 A, Turn-On Rise Time tR R Turn-Off Delay Time tD(OFF) G = 50Ω (Note 1, 2) Turn-Off Fall Time tF Total Gate Charge QG VDS = 48V, VGS = 10 V Gate-Source Charge QGS ID = 50A (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD IS = 50A, VGS = 0 V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR IS = 50A, VGS = 0 V dIF / dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 40 100 90 80 30 9.6 10 54 81 60 200 180 160 40 ns ns ns ns nC nC nC 1.5 V 50 A 200 A ns μC 3 of 8 QW-R502-088.E 50N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-088.E 50N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-088.E 50N06 Drain Current, ID (A) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET 2.5 On State Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage 102 2.0 150°C 1.5 1.0 101 VGS=10V VGS=20V 0.5 0.0 0 20 40 60 80 100 120 140160180 200 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25°C *Note: 1. VGS=0V 2. 250µs Test 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) 6 of 8 QW-R502-088.E 50N06 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 *Note: 1. VGS=0V 2. ID=250µA 0.8 150 200 -100 -50 0 50 100 Junction Temperature, TJ (°C) Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) TYPICAL CHARACTERISTICS(Cont.) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 50 100µs 1ms 102 10ms 1 10 10ms *Note: 1. Tc=25°C 2. TJ=150°C -1 3. Single Pulse 10 100 10-1 100 101 102 Drain-Source Voltage, VDS (V) Drain Current, ID (A) Drain Current , ID,(A) 10 Operation in This Area by RDS (on) *Note: 1. VGS=10V 2. ID=25A -50 0 50 100 150 Junction Temperature, TJ (°C) Maximum Drain Current vs. Case Temperature Maximum Safe Operating 3 On-Resistance Variation vs. Junction Temperature 40 30 20 10 0 25 75 50 100 125 Case Temperature, TC (°C) 150 Thermal Response, ZθJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-088.E 50N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-088.E