YEASHIN EK3J

DATA SHEET
EK3A~EK3J
SEMICONDUCTOR
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Ampere
FEATURES
•For surface mounted applications
Unit:inch(mm)
SMC/DO-214AB
•High temperature metallurgically bonded-no compression
contacts as found in other diode-constructed rectifiers
.128(3.25)
.108(2.75)
•Glass passivated junction
.245(6.22)
.220(5.59)
•Built-in strain relief
•Easy pick and place
•Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
.280(7.11)
.260(6.60)
•Complete device submersible temperature of 260°C for 10
.012(.305)
.006(.152)
seconds in solder bath
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
.103(2.62)
.079(2.00)
environment substance directive request
MECHANICAL DATA
•Case: JEDEC DO-214AB molded plastic
.008(.203)
.002(.051)
.050(1.27)
.030(0.76)
•Terminals: Solder plated, solderable per MIL-STD-750,
.320(8.13)
.305(7.75)
Method 2026
•Polarity: Indicated by cathode band
•Standard packaging: 12mm tape (EIA-481)
•Weight: 0.007 ounce, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
EK 3A
EK 3B
EK 3C
EK 3D
EK 3E
EK 3G
EK 3J
Maximum Recurrent Peak Reverse Voltage
50
100
150
200
300
400
600
V
Maximum RMS Voltage
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
50
100
150
200
300
400
600
V
Maximum Average Forward Rectified Current,
at TL=75℃
Peak Forward Surge Current 8.3ms single half sinewave
superimposed on rated load(JEDEC method)
3.0
A
100.0
A
1.25
0.95
Maximum Instantaneous Forward Voltage at 3.0A
UNITS
1.70
V
Maximum DC Reverse Current TA=25℃
5.0
µA
At Rated DC Blocking Voltage TA=100℃
200
µA
Maximum Reverse Recovery Time (Note 1)
35.0
nS
Typical Junction capacitance (Note 2)
45.0
pF
16
℃/W
-55 to +150
℃
Typical Thermal Resistance (Note 3) RθJA
Operating and Storage Temperature Range
TJ
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and applied Vr = 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
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1
REV.02 20120705
DEVICE CHARACTERISTICS
EK3A~EK3J
50W Noninductive
AVERAGE FORWARD CURRENT, AMPERS
10W Noninductive
(-)
(+)
PULSE
GENERATOR
*Note2
25 Vdc
(approx)
(-)
1W
Noninductive
(+)
OSCILLOSCOPE
*Note1
t rr
Notes:
+0.5A
1. Rise Time=7ns max.
Input Impedance= 1 megohm 22pF
0
2. Rise Time=10ns max.
Source Impedance= 50 Ohms 22pF
-0.25
4.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 8.0x8.0mm
COPPER LAND AREAS
3.0
2.0
1.0
50
60
70
80
90
100 110
2
4
5
6
LEAD TEMPERATURE, C
O
-1.0
1cm
SET TIME BAS FOR 10ns/cm
FORWARD CURRENT DERATING CURVE
TJ=100 C
O
100
10
TJ=75 C
O
TJ=25 C
O
1.0
0.1
0.01
2
40
60
80
60
80
100
INSTANTANEOUS FORWARD CURRENT, Ampers
INSTANTANEOUS REVERSE CURRENT, mAmpers
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST DIAGRAM
100 120 140
50-200V
10
300-400V
0.1
O
TJ=25 C
PULSE WIDTH= 300mS
2% DUTY CYCLE
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, Volts
PERCENT OF RATED PEAK INVERSE VOLTAGE, Volts
TYPICAL REVERSE CHARACTERISTICS
TYPICAL FORWARD CHARACTERISTICS
100
110
90
100
CAPACITANCE, PF
PEAK FORWARD SURGE CURRENT, Ampers
600V
1.0
90
80
70
80
70
60
50
40
30
TJ = 25 C
f = 1.0MHZ
Vsig = 50mVp-p
20
60
50
10
8.3ms SINGLE HALF SINE-WAVE
JEDC METHOD
1
5
10
0
50
100
0.1
1
10
100
1000
REVERSE VOLTAGE, Volts
NUMBER OF CYCLES AT 60Hz
TYPICAL JUNCTION CAPACITANCE
MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
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O
2
REV.02 20120705