EMT1 / UMT1N / IMT1A Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A zExternal dimensions (Unit : mm) zFeatures 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. (3) (4) (5) (2) (1) 1.2 1.6 0.5 0.13 (6) 0.5 0.5 1.0 1.6 0.22 EMT1 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : T1 1.3 2.0 (3) (2) (1) 1.25 0.65 (6) (5) 0.2 (4) zStructure Epitaxial planar type PNP silicon transistor 0.65 UMT1N 0.1Min. 0.9 0to0.1 zEquivalent circuit 0.7 0.15 2.1 Each lead has same dimensions EMT1 / UMT1N (3) (2) IMT1A (1) (4) (5) ROHM : UMT6 EIAJ : SC-88 (6) Abbreviated symbol : T1 IMT1A Tr1 (1) (2) (5) 0.3 (6) Tr2 (3) (6) (2) (1) (3) (5) (4) (4) 0.95 0.95 1.9 2.9 Tr1 Tr2 1.6 0.3to0.6 1.1 0to0.1 The following characteristics apply to both Tr1 and Tr2. 0.8 0.15 2.8 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : T1 zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V −150 mA Parameter Collector current Collector EMT1, UMT1N power dissipation IMT1A IC PC 150 (TOTAL) mW 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Rev.A 1/3 EMT1 / UMT1N / IMT1A Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA Collector cutoff current ICBO − − −0.1 µA VCB = −60V Emitter cutoff current IEBO − − −0.1 µA VEB = −6V VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA hFE 120 − 560 − VCE = −6V, IC = −1mA fT − 140 − MHz Cob − 4 5 pF Parameter Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Conditions VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz zPackaging specifications Package Type Taping Code T2R TR T108 Basic ordering unit (pieces) 8000 3000 3000 − − EMT1 UMT1N − IMT1A − − − zElectrical characteristic curves -5 -2 -1 -0.5 -0.2 -28.0 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA Ta = 25°C -500 -450 -400 -350 -300 -80 -250 -60 -200 -150 -40 -100 -20 -50µA IB = 0 -0.4 -0.8 -1.2 -1.6 Ta = 100°C DC CURRENT GAIN : hFE 25°C 100 -40°C 200 100 50 50 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 200 0 Fig.2 Grounded emitter output characteristics ( Ι ) VCE = -5V -3V -1V Ta = 25°C IB = 0 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 -8 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -0.1 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 -1 Ta = 25°C -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) Rev.A 2/3 EMT1 / UMT1N / IMT1A lC/lB = 10 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Ta = 25°C VCE = -12V 500 200 100 50 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 -1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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