Caution for Safety ■ Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY Characteristics List Characteristics List MMICs for Low Noise Amplifier(LNA) Application PDC Part No. GN01154B Function NEW GN01096B f (GHz) VDD (V) IDD (mA) RF Characteristics (typ.) 2-Stage Down-Mixer with 3-Stage Low Noise Amplifer 0.8/1.5 2.8 Low Noise Amplifier with AGC CDMA 0.8 GN01121B No. Page 8.0 CG : 27.5 dB, NF : 1.6 dB QFN-20JP0304-N3 2 4 6.5 PG : 15 dB, NF : 1.4 dB 6, 7 2.9 Low Noise Amplifier with Through Pass Switch Package SMini6-G1 1 10.0 IIP3 : 7.5 dBm, NF : 0.9 dB 6, 7, 16 MMICs for Mixers Application PDC f (GHz) VDD (V) IDD (mA) RF Characteristics (typ.) Function Part No. GN02029B Down-Mixer with Local Amplifier 0.8/1.5 GN02034B 2-Input,1-Output Down-Mixer with Local Amplifier J-CDMA GN02039B K-CDMA GN02037B 3.0 0.8 Down-Mixer with Local Amplifier 4.4 CG : 13 dB/12 dB, OIP3 : 10 dBm 4.0 CG : 12.5 dB, IIP3 : 1 dBm 8.0 CG : 10 dB, IIP3 : 5.8 dBm 7.5 CG : 10 dB, IIP3 : 5.3 dBm Package No. Page 5 SMini6-G1 1 6, 7, 17 6, 7 MMICs for Power Amplifier Module Driver Application f (GHz) VDD (V) IDD (mA) RF Characteristics (typ.) Function Part No. GN01125B 1-Stage Driver Amplifier 0.8 GN01105B 2-Stage Driver Amplifier 1.5 2-Stage Driver Amplifier with AGC 0.8 GN01140B PDC NEW 15.0 3.0 25.0 PG : 30.5 dB 5 PG : 34 dB, DR : 46 dB GN01106B PCS GN01081B 4 2-Stage Driver Amplifier 35.0 PG : 30 dB, DR : 48 dB 5,14 33.0 PG : 24 dB, DR : 47 dB 4 PG : 24.5 dB(ACLR : -53 dBc) ESONF10D-G1 4 8 2.8/3.5 1.5 2.0 with AGC 2.8 CDMA Page 15 SMini6-G1 1 GN01157S W-CDMA No. PG : 18 dB (1-Input,2-Output type) NEW GN01165S NEW GN01153S NEW Package 30.0 0.8 2-Stage Driver Amplifier 3.0 1.9 50.0 DR : 47dB PG : 29 dB, DR : 48 dB SMini6-G1 1 6, 7 PG : 25 dB(POUT = 11 dBm) ESOF10D-G1 3 7 MMICs for Switch Application Function Part No. f (GHz) VDD (V) IDD (mA) RF Characteristics (typ.) NEW GN04038N NEW GN04033N PDC GN04022N W-CDMA/PCS GN04041N 5 0.8/1.5 LOSS : 0.19 dB, ISO : 28 dB 4 High-Power SPDT Switch NEW GN04019N NEW GSM/DCS LOSS : 0.25 dB, ISO : 23 dB 2.0 3.0 0.01 0.8 High-Power DPDT Switch High-Power SP4T Switch 0.9/1.8 2.8 0.6 Part No. PDC UN0432H J-CDMA UN0374N 8 LOSS : 0.20 dB, ISO : 23 dB 6, 7,18 LOSS : 0.25 dB, ISO : 23 dB 6,7 LOSS : 0.40 dB, ISO : 30 dB QFN-20JP0304-N3 2 9 CDMA/AMPS UN0371C PCS W-CDMA 2 UN0371P UN0371W f (GHz) VDD (V) VGG(V) PO (dBm) PG (dB) Efficiency Package NEW NEW NEW NEW NEW 1.5 3.5 0.8 3.4 1.9 2.0 3.5 No. Page - 2.5 31 24 59% PAM004-N1 5 5,10 27 27 38% PAM006-N1 6 6, 7,11 29 35% 28 26 6, 7,12 PAMP006-N1 26 33% 25 41% 8, 19 SMini6-G1 1 LOSS : 0.25 dB, ISO : 23 dB Power Amplifier Modules Application Page LOSS : 0.20 dB, ISO : 28 dB NEW GN04028N No. 1.5 GN04017N CDMA Package 7 6, 7,13 PAM006-N1 6 8 Packaging Information Appearance GaAs MMICs 2. QFN-20JP0304-N3 3. ESOF10D-G1 1. SMini6-G1 (S-Mini Type.6-pin) 4. ESONF10D-G1 5. PAM004-N1 Packaging Information Power Amplifier Modules 6. PAM006-N1 7. PAMP006-N1 Note) The package size is half of photograph Package Outline Unit : mm 1 5 3 4 2.00±0.10 2 8 50 0. 16 10 15 0.40 11 (0.55) 0.10 M 0.9 1.8+0.15 −0.10 0.15 min. 0.15±0.05 : Au Plating 1.8 0 to 0.2 6 0.16±0.06 4.80±0.15 5.00±0.15 0.3±0.1 Unit : mm 5 20 0.5 6 12° 6. PAM006-N1 Tolerance dimension without indication : ± 0.1 7. PAMP006-N1 Unit : mm 6.2±0.15 5 3.4 2 6.0 6 0.7 10 1 7 2 6 (6.20±0.2) No.1 Pin imdication 1 3 1 SEATING PLANE 3.00±0.10 (1.30) 4.80±0.15 5.00±0.15 3.4±0.2 2.2±0.2 1.1±0.2 Detail of Part A 3- 0.10 0.3±0.1 7 0.45±0.1 5 R0.30 5. PAM004-N1 Part A 12° 11 12° φ 0.6 1 2 3 4 5 0.5±0.07 12 1 0.15±0.05 0 to 0.2 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 4.0±0.2 Unit : mm 6 20 2.8±0.2 0.2±0.1 10 3.20±0.10 0.45±0.1 1.1±0.2 12° Detail of Part A 11 16 0.80 max. 12 345 0.5±0.07 4. ESONF10D-G1 4 3 7 8 6.0 9 0.9 5 4 1.8+0.15 –0.1 1.1 3.6 6.2±0.15 1.60 φ 0.8 15 C (4.00) 11 10° 2.8±0.2 4.20 ±0.10 Part A (3.00) 3 9 8 7 6 Unit : mm 0.20 ±0.10 5° 0.2±0.1 12 (0.65) (0.65) 1.3±0.1 2.0±0.1 10 2. QFN-20JP0304-N3 (0.80) 10 9 8 7 6 4 2 Unit : mm 0.2±0.1 1.25±0.10 2.1±0.1 1 3. ESOF10D-G1 (0.30) 5 6 Unit : mm 0.12+0.05 –0.02 0.55±0.1 0.2±0.05 2.2±0.2 3.4±0.2 (0.425) 1. SMini6-G1 (S-Mini Type.6-pin) : Au Plating Tolerance dimension without indication : ± 0.1 : Au Plating Tolerance dimension without indication : ± 0.15 (6.20±0.2) 3 Recommended Application Block Diagrams/Lineup GaAs MMIC/Power Amplifier Module for 800 MHz/1.5 GHz-Band PDC Block Diagrams Rx IF Demodulator Frontend GN01154B Antenna Switch GN01140B GN04038N Driver Amplifier with AGC (800 MHz) Power Amplifier Switch GaAs MMIC/Power Amplifier Module for 800 MHz/1.5 GHz-Band PDC Modulator Tx Power Amplifier Driver Amplifier with AGC (1.5GHz) GN01165S MMIC Lineup Block Driver Amplifier Part No. Function 2-Stage Driver Amplifier with AGC (1-Input, 2-Output type) NEW NEW 2-Stage Driver Amplifier with AGC GN01154B NEW 2 Down-Mixer with GN01140B GN01165S Frontend 3 Low Noise Amplifier Antenna Switch 4 GN04038N NEW High-Power SPDT Switch f (GHz) VDD (V) I DD (mA) 0.8 1.5 RF Characteristics (typ.) Package No. 25.0 PG : 34 dB, DR : 46 dB 33.0 PG : 24 dB, DR : 47 dB 2.8 8.0 CG : 27.5 dB, NF = 1.6 dB 3.0 0.01 LOSS : 0.19 dB, ISO : 28 dB SMini6-G1 1 2.8/3.5 SMini6-G1 1 QFN-20JP0304-N3 2 0.8/1.5 Recommended Application Block Diagrams/Lineup GaAs MMIC/Power Amplifier Module for 1.5 GHz-Band PDC Block Diagrams GN02029B LNA Mixer Rx Antenna Switch Demodulator Filter Distributor GN04033N VCO Synthesizer Modulator Tx Ext. Driver Amplifier with AGC UN0432H GN01157S GaAs MMIC/Power Amplifier Module for 1.5 GHz-Band PDC PA Module MMIC Lineup Block Part No. Mixer GN02029B Down-Mixer with Local Amplifier 0.8/1.5 Function GN01105B 2-Stage Driver Amplifier (Matching Circuit Built-in) Driver Amplifier GN01157S Antenna Switch f (GHz) VDD (V) IDD (mA) NEW 2-Stage Driver Amplifier with AGC GN04033N NEW High-Power SPDT Switch RF Characteristics (typ.) 4.4 CG : 13 dB/12 dB, OIP3 : 10 dBm 25.0 PG : 30.5 dB 2.8/3.5 35.0 PG : 30 dB, DR : 48 dB 3.0 0.01 LOSS : 0.20 dB, ISO : 28 dB 3.0 Package No. SMini6-G1 1 1.5 Power Amplifier Module Lineup Application 1.5 GHz PDC Part No. UN0432H NEW f (GHz) VDD (V) 1.5 3.5 VGG (V) POUT (dBm) PG (dB) -2.5 31 24 Efficiency 59% Package No. PAM004N-1 5 5 Recommended Application Block Diagrams/Lineup GaAs MMIC/Power Amplifier Module for CDMA.PCS Block Diagrams PCS GN0xxxxB * Mixer Demodulator Filter LNA Rx CDMA GaAs MMIC/Power Amplifier Module for CDMA.PCS GN01096B GN01121B GN02037B GN02039B Mixer Demodulator Filter LNA Antenna Switch Synthesizer DPX Distributor VCO GN04017N GN04028N Ext. Modulator PA Module UN0374N UN0371C Mixer Driver Amplifier with AGC GN01106B Tx PCS Modulator PA Module UN0371P Note) * : Under development 6 Driver Amplifier Mixer Recommended Application Block Diagrams/Lineup MMIC Lineup for CDMA Block Part No. Function GN01096B Low Noise Amplifier Low Noise Amplifier with AGC GN01121B Antenna Switch 0.8 Local Amplifier GN01106B 2-Stage Driver Amplifier with AGC GN04017N High-Power SPDT Switch GN04028N PG : 15 dB, NF : 1.4 dB 10.0 IIP3 : 7.5 dBm, NF : 0.9 dB 8.6 CG : 10 dB, IIP3 : 5.8 dBm 7.5 CG : 10 dB, IIP3 : 5.3 dBm 2.8 30.0 PG : 29 dB, DR : 48 dB 3.0 0.01 Down-Mixer with (For Korea) GN02037B RF Characteristics (typ.) 6.5 2.9 Low Noise Amplifier with Through Pass Switch Mixer (For Japan) GN02039B Driver Amplifier f (GHz) VDD (V) IDD (mA) 3.0 Package No. SMini6-G1 1 LOSS : 0.20 dB, ISO : 23 dB NEW High-Power DPDT Switch LOSS : 0.25 dB, ISO : 23 dB GaAs MMIC/Power Amplifier Module for CDMA.PCS Power Amplifier Module Lineup for CDMA Application US-CDMA J-CDMA Part No. f (GHz) NEW UN0374N NEW 0.8 UN0371C VDD (V) VGG (V) POUT (dBm) PG (dB) Efficiency Package No. 3.4 28 29 35% PAMP006-N1 7 3.5 27 27 38% PAM006-N1 6 MMIC Lineup for PCS Block Driver Amplifier Part No. Function GN01081B Antenna Switch GN04028N NEW f (GHz) VDD (V) IDD (mA) 2-Stage Driver Amplifier 1.9 High-Power DPDT Switch 0.8 3.0 RF Characteristics (typ.) Package No. 50.0 PG : 25 dB (POUT = 11 dBm) 0.01 LOSS : 0.25 dB, ISO : 23 dB SMini6-G1 1 ESOF10D-G1 3 Power Amplifier Module Lineup for PCS Application US-PCS Part No. UN0371P NEW f (GHz) VDD (V) 1.9 3.4 VGG (V) POUT (dBm) PG (dB) Efficiency 28 26 33% Package No. PAMP006-N1 7 7 Recommended Application Block Diagrams/Lineup GaAs MMIC/Power Amplifier Module for W-CDMA Block Diagrams LNA Rx Demodulator BPF GN04022N GN04041N Antenna Switch DPX BPF Tx Modulator Ext. GaAs MMIC/Power Amplifier Module for W-CDMA PA Module Driver Amplifier with AGC UN0371W GN01153S MMIC Lineup Block Part No. Driver Amplifier GN01153S Function f (GHz) VDD (V) IDD (mA) NEW 2-Stage Driver Amplifier 2.8 30.0 with AGC NEW High-Power SPDT Switch 3.0 0.01 SMini6-G1 1 LOSS : 0.25 dB, ISO : 23 dB Power Amplifier Module Lineup Application W-CDMA 8 Part No. UN0371W No. LOSS : 0.25 dB, ISO : 23 dB GN04022N GN04041N Package DR : 47 dB 2.0 Antenna Switch RF Characteristics (typ.) PG : 24.5 dB(ACLR : -53 dBc) ESONF10D-G1 4 NEW f (GHz) VDD (V) 2.0 3.5 VGG (V) POUT (dBm) PG (dB) 26 25 Efficiency 41% Package No. PAM006-N1 6 Recommended Application Block Diagrams/Lineup GaAs MMIC/Power Amplifier Module for GSM.DCS Block Diagrams Rx SAW Filter Detector Antenna Switch GN04019N LPF Tx GaAs MMIC/Power Amplifier Module for GSM.DCS LPF PA Module UN0xxxG * Note) * : Under development MMIC Lineup Block Part No. Antenna Switch GN04019N Function f (GHz) VDD (V) IDD (mA) NEW High-Power SP4T Switch 0.9/1.8 2.8 0.6 RF Characteristics (typ.) Package No. LOSS : 0.40 dB, ISOL : 30 dB QFN-20JP0304-N3 2 9 GaAs PA Module for Cellular Phone UN0432H Power Amplifier Module for 1.5 GHz-Band PDC Features • • • • • Low consumption current High efficiency : η = 59 % High gain : PG = 24 dB High output power : P OUT = 31 dBm Super miniature package(PAM004-N1 : 0.04 cc) Characteristics Diagram ( VDD1 = VDD2 = 3.5 V, VGG = - 2.5 V ) PIN POUT η POUT 34 70% 1429MHz 1453MHz 1429MHz 1453MHz 60% Efficiency η (%) Output power POUT (dBm) 32 30 28 26 24 Introduce New Products GaAs PA Module for Cellular Phone 22 50% 40% 30% 20% -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 10% 24 25 Max input power PIN (dBm) 26 27 28 29 30 31 32 33 Output power POUT (dBm) POUT ACPR (±50 kHz) -35 Package Outline Unit: mm -40 φ 0.6 6 2 5 3 4 -50 -55 -65 24 25 26 27 28 29 30 31 32 33 Output power POUT (dBm) PAM004-N1 10 1.8 8 4.80±0.15 5.00±0.15 -60 0.5 1 4.80±0.15 5.00±0.15 7 -45 0.15 min. Adjacent channel leakage power suppression ACPR (dBc) 1429MHz 1453MHz 1 : PIN 2 : VDD1 3 : VDD2 0.9 4 : POUT 1.8+0.15 5 : GND -0.10 6 : VGG 7 : GND : Au Plating 8 : GND Tolerance dimension without indication : ± 0.1 9 : GND 10 : GND 11 : GND 12 : GND GaAs PA Module for Cellular Phone UN0374N Power Amplifier Module for J-CDMA Features • • • High efficiency : η = 38% (POUT = 27 dBm, VCC = 3.5V) : η = 20% (POUT = 15 dBm, VCC = 1.5V) High gain : PG = 27 dB Super miniature package(PAM006-N1 : 0.06 cc) Characteristics Diagram ( VCC1 = VCC2 = 3.4 V, VREF = 2.8 V ) I CC POUT ACPR1 POUT 550 -40 VCC=3.5V VCC=1.5V 450 Power current ICC (mA) VCC=3.5V VCC=1.5V Adjacent channel leakage power Suppression1 ACPR1 (dBc) 500 400 350 300 250 200 150 100 -45 -50 -55 -60 -65 50 -70 4 6 8 10 12 14 16 18 20 22 24 26 28 30 4 6 Introduce New Products GaAs PA Module for Cellular Phone 0 8 10 12 14 16 18 20 22 24 26 28 30 Output power POUT (dBm) Output power POUT (dBm) ACPR2 POUT -52 VCC=3.5V VCC=1.5V Package Outline -56 Unit: mm -62 12 11 10 1 6 2 5 3 4 -66 3.4 -64 -68 -70 -72 7 -74 8 6.0 0.9 1.8+0.15 –0.1 -76 -78 9 6.2±0.15 φ 0.8 -60 0.7 -58 6.0 Adjacent channel leakage power Suppression2 ACPR2 (dBc) -54 4 6 8 10 12 14 16 18 20 22 24 26 28 30 : Au Plating 1.1 3.6 6.2±0.15 Output power POUT (dBm) Tolerance dimension without indication : ± 0.1 1 : PIN 2 : VCC1 3 : VCC2 4 : POUT 5 : VDC 6 : Vref 7 : GND 8 : GND 9 : GND 10 : GND 11 : GND 12 : GND PAM006-N1 11 GaAs PA Module for Cellular Phone UN0371C Power Amplifier Module for CDMA.AMPS Features • • • • • Low consumption current High efficiency : η = 35 %(CDMA) High gain : PG = 29 dB High output power : P OUT = 28 dBm Super miniature package(PAMP006-N1 : 0.06 cc) Characteristics Diagram ( VCC1 = VCC2 = 3.4 V, VREF = 3.0 V ) η POUT ACPR1 POUT 50 -35 V-mode On(3.0V) V-mode Off Adjacent channel leakage power suppression1 ACPR1 (dBc) V-mode On(3.0V) V-mode Off Efficiency η (%) 40 30 20 10 Introduce New Products GaAs PA Module for Cellular Phone 0 10 12 14 16 18 20 22 24 26 28 30 32 -40 -45 -50 -55 -60 10 12 14 Output power POUT (dBm) 16 18 20 22 24 26 28 30 32 Output power POUT (dBm) ACPR2 POUT -50 Package Outline Unit: mm -55 No.1 Pin indication -65 -70 1 7 2 6 3 (6.20±0.2) -60 5 4 -75 1.60 Adjacent channel leakage power suppression2 ACPR2 (dBc) V-mode On(3.0V) V-mode Off -80 10 12 14 16 18 20 22 24 26 28 Output power POUT (dBm) 30 : Au Plating 32 (6.20±0.2) PAMP006-N1 12 Tolerance dimension without indication : ± 0.5 1 2 3 4 5 6 7 : VCC : RFIN : Vref : Vmode : VCC : RFOUT : GND GaAs PA Module for Cellular Phone UN0371P Power Amplifier Module for PCS Features • • • • • Low consumption current High efficiency : η = 33 % High gain : PG = 26 dB High output power : P OUT = 28 dBm Super miniature package(PAMP006-N1 : 0.06 cc) Characteristics Diagram ( VCC1 = V CC2 = 3.4 V, VREF = 3.0 V ) η POUT ACPR1 POUT 50 -35 V-mode Off V-mode On(3.0V) Adjacent channel leakage power Suppression1 ACPR1 (dBc) V-mode Off V-mode On(3.0V) Efficiency η (%) 40 30 20 10 -40 -45 -50 -55 -60 -65 -70 12 14 16 18 20 22 24 26 28 30 -75 10 12 14 Output power POUT (dBm) 16 18 20 22 24 26 28 Introduce New Products GaAs PA Module for Cellular Phone 0 10 30 Output power POUT (dBm) ACPR2 POUT -60 Package Outline Unit: mm -65 -70 1 7 2 6 3 (6.20±0.2) No.1 Pin indication 5 4 -75 1.60 Adjacent channel leakage power Suppression2 ACPR2 (dBc) V-mode Off V-mode On(3.0V) -80 10 12 14 16 18 20 22 24 26 28 : Au Plating 30 (6.20±0.2) Output power POUT (dBm) 1 2 3 4 5 6 7 : VCC : RFIN : Vref : Vmode : VCC : RFOUT : GND Tolerance dimension without indication : ± 0.5 PAMP006-N1 13 GaAs MMICs for Cellular Phone GN01157S Driver Amplifier with AGC for 1.5 GHz-Band PDC Features • • • • • 2-Stage Amplifier with High Output Auto Gain Controllable Low consumption current : I DD = 35 mA High gain : PG = 30 dB Dynamic range : DR = 48 dB Small package : S-Mini Type . 6-pin Characteristics Diagram POUT , ACP, GS VAGC POUT , ACP PIN 130 IDD 110 20 100 IDD1 10 0 15 -10 90 0 80 POUT -10 70 -20 60 GS -30 50 -40 40 ACP1 (50 kHz) -50 30 -60 POUT 10 -20 5 -30 0 -40 -5 -50 -10 -60 ACP1 (50 kHz) -15 -70 20 -20 ACP2 (100 kHz) -70 -80 0 0 0.5 1 1.5 2 2.5 -25 -30 3 -80 ACP2 (100 kHz) 10 Adjacent channel leakage power ACP (dBc) IDD2 30 20 120 Output power POUT (dBm) 40 Gain control sensitivity GS (dB/V) Output power POUT (dBm), Adjacent channel leakage power ACP (dBc) 50 -90 -25 Gate control voltage VAGC (V) -20 -15 -10 Max input power PIN (dBm) Measurement Circuit Diagram Package Outline (0.425) Unit: mm 0.12+0.05 –0.02 VDD1 5° 0.2±0.05 1.25±0.10 2.1±0.1 Introduce New Products GaAs MMICs for Cellular Phone 1 2 VDD2 4 C3 C2 R1 L2 L1 0.2±0.1 5 6 Out 3 C1 (0.65) (0.65) 6 5 4 1 2 3 1.3±0.1 2.0±0.1 0.9±0.1 14 0 to 0.1 S-Mini Type.6-pin 0.9+0.2 –0.1 10° 1 : RF input 2 : GND 3 : VAGC 4 : VDD2 5 : GND 6 : VDD1 VAGC IN L3 R2 C4 C1 = 33 pF C2 = 100 pF+10 nF C3 = 100 pF+1000 pF C4 = 10 nF L 1 = 3.9 nH L 2 = 33 nH L 3 = 3 .9 nH R1 = 62 Ω R2 = 130 Ω GaAs MMICs for Cellular Phone GN01125B Driver Amplifier for 800 MHz-Band PDC Features • • • • Matching circuit built-in(Input-side,Output-side) Low consumption current : I DD = 15 mA High gain : PG = 18 dB Small package : S-Mini Type . 6-pin Characteristics Diagram POUT , IDD PIN 10 -70 ACP1 (50 kHz) 5 -65 POUT ACP2 (100 kHz) 0 -60 -5 -20 -15 -10 -5 0 -55 20 f = 940 MHz VDD = 3.5 V 10 15 IDD 5 10 POUT 0 -5 -20 5 -15 -10 -5 0 Circuit current IDD (mA) Output power POUT (dBm) f = 940 MHz VDD = 3.5 V 15 Output power POUT (dBm) -75 Adjacent channel leakage power ACP (dBc) POUT , ACP PIN 15 0 Max input power PIN (dBm) Max input power PIN (dBm) Package Outline Measurement Circuit Diagram (0.425) Unit: mm 0.12+0.05 –0.02 100 pF + 10 000 pF VDD 5° 0.2±0.05 1 2 In 3 6 (0.65) (0.65) 1.3±0.1 2.0±0.1 5 4 2 3 MC MC 0.9±0.1 0 to 0.1 0.9+0.2 –0.1 10° S-Mini Type.6-pin Z0 = 50 Ω 10 nH Introduce New Products GaAs MMICs for Cellular Phone 1.25±0.10 2.1±0.1 4 0.2±0.1 5 6 1 : Out 2 : GND 3 : GND 4 : In 5 : GND 6 : VDD 1 Z0 = 50 Ω Out MC : Matching Circuit 15 GaAs MMICs for Cellular Phone GN01121B Low Noise Amplifier with through pass switch for CDMA Features • • • Low consumption current(power save mode) Low distortion : IIP3 = 7.5 dBm Low noise : NF = 0.9 dB(@f = 850 MHz) Characteristics Diagram PG, NF f PG, IIP3 IDD Mode1 PG 5.5 5 Mode2 PG 4.5 Mode3 NF 10 4 3.5 VREF = 2.9 V Mode1:VDD = 2.9 V, VICONT = 2.9 V Mode2:VDD = 2.9 V, VICONT = Open Mode3:VDD = 0 V, VICONT = Open 5 0 3 2.5 2 Mode3 PG 1.5 -5 Noise figure NF (dB) 15 Power gain PG (dB) 20 6 1 Mode2 NF Mode1 NF -10 780 800 820 840 860 880 0.5 900 Power gain PG (dB), Input third harmonics mutual modulation distortion IIP3 (dBm) 20 15 10 Mode1 5 0 Mode2 -5 -30 0 920 Mode3 0 5 10 15 Circuit current IDD (mA) Frequency f (MHz) • Mode1 : Low input mode PIN PG IIP3 • Mode3 : Through pass operation POUT PIN Amplifier1 (Gain1, IDD) Gain = 15 dB, I DD = 10 mA, NF = 0.9 dB POUT Gain = - 4 dB, I DD = 0 mA, NF = 5 dB Package Outline Measurement Circuit Diagram (0.425) Unit: mm VDD 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 Introduce New Products GaAs MMICs for Cellular Phone 1 2 100 pF//22 nF 20 kΩ 12 nH 100 pF 0.5 pF 6 0.2±0.1 5 6 VREF 10 nF 5° 0.2±0.05 5 Out 4 3 MC (0.65) (0.65) 1 1.3±0.1 2.0±0.1 2 3 100 pF 33 nH 0.9±0.1 16 0 to 0.1 S-Mini Type.6-pin 0.9+0.2 –0.1 10° 1 : RF input 2 : VICONT 3 : TM 4 : VREF 5 : GND 6 : VDD RF input 15 nH 10 nF VICONT MC : Matching Circuit Note) In the case of using for overseas' models, please apply smaller inductance than 33nH at IN terminal (pin 1) and than 12nH at VDD terminal(pin 6). GaAs MMICs for Cellular Phone GN02039B Down-Mixer with Local Amplifier for CDMA Features • • • • Down-Mixer for J-CDMA Low distortion : IIP3 = 5.8 dBm Local filter-less Small package : S-Mini Type . 6-pin Conversion gain CG (dB), Input third harmonics mutual modulation distortion IIP3 (dBm), Noise figure NF (dB), Mixer current IMIX (mA), Local amplifier current ILO (mA) , Circuit current IDD (mA) Characteristics Diagram CG, IIP3, NF, IMIX , I LO , I DD PLO 12 CG NF 10 IDD 8 6 IMIX 4 ILO 2 fRF = 850 MHz fLO = 740 MHz PRF = -27 dBm PLO = -10 dBm VDD = 3.0 V IIP3 0 -2 -30 -20 -10 0 10 Local amplifier power PLO (dBm) Package Outline Measurement Circuit Diagram (0.425) Unit: mm 0.12+0.05 –0.02 RF input 4.7 nH 5° 0.2±0.05 4 1.25±0.10 2.1±0.1 2 15 nH 3 680 Ω 15 nH 6 5 4 1 2 3 Introduce New Products GaAs MMICs for Cellular Phone 1 Local input 1.4 pF 1.6 pF 0.2±0.1 5 6 (0.65) (0.65) 1.3±0.1 2.0±0.1 15 nF 0.9±0.1 0 to 0.1 S-Mini Type.6-pin 0.9+0.2 –0.1 10° 1 : IF output 2 : GND 3 : Local VDD 4 : Local input 5 : GND 6 : RF input 100 pF 13 pF VIF output 0.5 pF 56 nH 120 nH 22 nH 1 000 pF 510 Ω VLO output 82 pF 15 nF IF output 17 GaAs MMICs for Cellular Phone GN04017N Antenna Switch for CDMA Features • • • • Low insertion loss : LOSS = 0.2 dB High isolation : ISO = 23 dB Low distortion Small package : S-Mini Type . 6-pin Characteristics Diagram P IN P OUT LOSS P IN 0.5 100 f = 925 MHz POUT IM3 Output power POUT (dBm), Inter modulation3 IM3 (dBm) Insertion loss LOSS (dB) 80 0.4 0.3 0.2 0.1 60 40 20 0 -20 -40 f1=925MHz f2=915MHz flM3=905MHz Vctl=0/3V -60 -80 -100 0 25 26 27 28 29 30 31 32 33 34 35 0 Max Input power PIN (dBm) 30 40 50 60 0.12+0.05 –0.02 Unit: mm 90 100 Z0 = 50 Ω Z0 = 50 Ω 5° Out2 4 0.2±0.1 1.25±0.10 2.1±0.1 Introduce New Products GaAs MMICs for Cellular Phone 2 80 Out1 100 pF 100 pF 1 70 Measurement Circuit Diagram (0.425) 5 6 20 Max input power PIN (dBm) Package Outline 0.2±0.05 10 3 (0.65) (0.65) VCTL1 1.3±0.1 2.0±0.1 6 5 4 1 2 3 1 000 pF 1 000 pF 100 pF VCTL2 0.9±0.1 18 0 to 0.1 S-Mini Type.6-pin 0.9+0.2 –0.1 10° 1 : VCTL1 2 : Input 3 : VCTL2 4 : Out2 5 : GND 6 : Out1 Z0 = 50 Ω Input Logic table On route VCTL1 VCTL2 In-Out1 "H" "L" In-Out2 "L" "H" GaAs MMICs for Cellular Phone GN04022N Driver Amplifier for PCS Features • • • • Low insertion loss : LOSS = 0.25 dB High isolation : ISO = 23 dB Low distortion Small package : S-Mini Type . 6-pin Characteristics Diagram P OUT , IM3 P IN LOSS, ISO P IN 0.5 40 100 POUT IM3 30 ISO 0.3 20 LOSS 0.2 10 Output power POUT (dBm) Inter modulation 3 IM3 (dBm) 0.4 Isolation ISOL (dB) Insertion loss LOSS (dB) 80 60 40 20 0 -20 -40 f1=1960MHz f2=1980MHz flM3=2000MHz Vctl=0/3V -60 -80 0.1 10 15 20 25 30 35 0 40 -100 0 10 20 Max input power PIN (dBm) 30 40 50 60 70 80 90 100 Max input power PIN (dBm) Package Outline Measurement Circuit Diagram (0.425) Unit: mm 0.12+0.05 –0.02 Z0 = 50 Ω 5 6 Z0 = 50 Ω Out1 5° 0.2±0.05 Out2 4 100 pF 1 2 0.2±0.1 3 (0.65) (0.65) VCTL1 1.3±0.1 2.0±0.1 6 5 4 1 2 3 1 000 pF 1 000 pF 100 pF Introduce New Products GaAs MMICs for Cellular Phone 1.25±0.10 2.1±0.1 100 pF VCTL2 0.9±0.1 0 to 0.1 S-Mini Type.6-pin 0.9+0.2 –0.1 10° 1 : VCTL1 2 : Input 3 : VCTL2 4 : Out2 5 : GND 6 : Out1 Z0 = 50 Ω Input Logic table On route VCTL1 VCTL2 In-Out1 "H" "L" In-Out2 "L" "H" 19