MICROCIRCUIT DATA SHEET Original Creation Date: 10/05/95 Last Update Date: 06/16/98 Last Major Revision Date: 03/03/98 MNCD4011BM-X REV 1A0 QUAD 2-INPUT NOR BUFFERED B SERIES GATE General Description These quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source sand sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain. All inputs are protected against static discharge with diodes to Vdd and Vss. Industry Part Number NS Part Numbers CD4011BM CD4011BMJ/883 CD4011BMW/883 Prime Die CD4011BM Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNCD4011BM-X REV 1A0 Features - Low power TTL Fan out of 2 driving 74L compatibility or 1 driving 74LS - 5V-10V-15V parametric ratings - Symmetrical output characteristics - Maximum input leakage 1uA at 15V over full temperature range 2 MICROCIRCUIT DATA SHEET MNCD4011BM-X REV 1A0 (Absolute Maximum Ratings) (Note 1, 2) Voltage at Any Pin -0.5V to Vdd +0.5V Power Dissipation (Pd) Dual-In-Line Small Outline Vdd Range 700mW 500mW -0.5Vdc to +18Vdc Storage Temperature (Ts) -65 C to +150 C Lead Temperature (Tl) (Soldering, 10 seconds) Note 1: Note 2: 260 C "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. Except for "Operating Temperature Range" they are not meant to imply that the devices should be operated at these limits. the table of "Electrical Characteristics" provides conidtions for actual device operation. All voltages measured with respect to Vss unless otherwise specified. Recommended Operating Conditions Operating Range (Vdd) 3Vdc to 15Vdc Operating Temperature Range CD4011BM -55 C to +125 C 3 MICROCIRCUIT DATA SHEET MNCD4011BM-X REV 1A0 Electrical Characteristics DC PARAMETERS SYMBOL Vol Voh Iih Iil Ioh PARAMETER Logical "0" Output Voltage Logical "1" Output Voltage Logical "1" Input Current Logical "0" Input Current Logical "1" Output Current CONDITIONS NOTES MAX UNIT SUBGROUPS 0.05 V 1, 2, 3 Vdd = 10V, Vih = 10V, Iout < 1uA 0.05 V 1, 2, 3 Vdd = 15V, Vih = 15V, Iout < 1uA 0.05 V 1, 2, 3 Vdd = 5V, Vil = 0V, Iout < 1uA 4.95 V 1, 2, 3 Vdd = 10V, Vil = 0V, Iout < 1uA 9.95 V 1, 2, 3 Vdd = 15V, Vil = 0V, Iout < 1uA 14.95 V 1, 2, 3 100 nA 1, 3 1000 nA 2 -100 nA 1, 3 -1000 nA 2 -0.51 mA 1 -0.36 mA 2 -0.64 mA 3 -1.3 mA 1 -0.9 mA 2 -1.6 mA 3 -3.4 mA 1 -2.4 mA 2 -4.2 mA 3 0.51 mA 1 0.36 mA 2 0.64 mA 3 1.3 mA 1 0.9 mA 2 1.6 mA 3 3.4 mA 1 2.4 mA 2 4.2 mA 3 Vdd = 15V, Vin = 15V Vdd = 15V, Vin = 0V Vdd = 5V, Vil = 0V, Vout = 4.6V Vdd = 15V, Vil = 0V, Vout = 13.5V Logical "0" Output Current MIN Vdd = 5V, Vih = 5V, Iout < 1uA Vdd = 10V, Vil = 0V, Vout = 9.5V Iol PINNAME Vdd = 5V, Vih = 5V, Vout = 0.4V Vdd = 10V, Vih = 10V, Vout = 0.5V Vdd = 15V, Vih = 15V, Vout = 1.5V 4 MICROCIRCUIT DATA SHEET MNCD4011BM-X REV 1A0 Electrical Characteristics DC PARAMETERS(Continued) SYMBOL Idd PARAMETER Quiescent Drive Current CONDITIONS NOTES PINNAME MIN Vdd = 5V, Vih = 5V, Vil = 0V Vdd = 10V, Vih = 10V, Vil = 0V Vdd = 15V, Vih = 15V, Vil = 0V Vih Vil Logical "1" Input Voltage Logical "0" Input Voltage MAX UNIT SUBGROUPS 0.25 uA 1, 3 7.5 uA 2 0.5 uA 1, 3 15 uA 2 1 uA 1, 3 30 uA 2 Vdd = 5V, Vout = 0.5V (max) 1, 4 3.5 V 1, 2, 3 Vdd = 10V, Vout = 1V (max) 1, 4 7 V 1, 2, 3 Vdd = 15V, Vout = 1.5V (max) 1, 4 11 V 1, 2, 3 Vdd = 5V, Vout = 4.5V (min) 1, 4 1.5 V 1, 2, 3 Vdd = 10V, Vout = 9V (min) 1, 4 3 V 1, 2, 3 Vdd = 15V, Vout = 13.5V (min) 1, 4 4 V 1, 2, 3 AC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) AC: tr=tf=20nS, Cl = 50pF, Rl = 200K Ohms tPHL Propagation Delay Time Vdd = 5V Vdd = 10V Vdd = 15V 5 3 250 nS 9 3 350 nS 10 3 200 nS 11 2 100 nS 9 2 140 nS 10 2 80 nS 11 2 70 nS 9 2 100 nS 10 2 55 nS 11 MICROCIRCUIT DATA SHEET MNCD4011BM-X REV 1A0 Electrical Characteristics AC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) AC: tr=tf=20nS, Cl = 50pF, Rl = 200K Ohms SYMBOL tPLH PARAMETER Propagation Delay Time CONDITIONS NOTES Vdd = 5V Vdd = 10V Vdd = 15V tTHL Transition Time Vdd = 5V Vdd = 10V Vdd = 15V tTLH Transition Time Vdd = 5V Vdd = 10V Vdd = 15V Cin Average Input Capacitance Note Note Note Note 1: 2: 3: 4: PINNAME MAX UNIT SUBGROUPS 3 250 nS 9 3 350 nS 10 3 200 nS 11 2 100 nS 9 2 140 nS 10 2 80 nS 11 2 70 nS 9 2 100 nS 10 2 55 nS 11 3 200 nS 9 3 280 nS 10 3 160 nS 11 2 100 nS 9 2 140 nS 10 2 80 nS 11 2 80 nS 9 2 110 nS 10 2 65 nS 11 3 200 nS 9 3 280 nS 10 3 160 nS 11 2 100 nS 9 2 140 nS 10 2 80 nS 11 2 80 nS 9 2 110 nS 10 2 65 nS 11 2 7.5 pF 9 Parameter tested go-no-go only. Guaranteed parameter not tested. Tested at 25 C; guaranteed but not tested at +125 C and -55 C. Vout condition is measured with inputs at Vih, Vil. 6 MIN MICROCIRCUIT DATA SHEET MNCD4011BM-X REV 1A0 Revision History Rev ECN # 1A0 M0002788 06/16/98 Rel Date Originator Changes Linda Collins Converted from RETS4011BX rev. 8C to MDS MNCD4011BM-X rev. 1A0. Deleted the DC Rad Hard stress tests and Drift values. 7