Transmissive Photosensors (Photo Interrupters) CNZ1120 (ON1120) Photo Interrupter Unit : mm For contactless SW, object detection Overview CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 14.0±0.2 3.0±0.2 Features Fast response : tr, tf = 6 µs (typ.) Symbol Ratings Input (Light Forward current (DC) emitting diode) Power dissipation VR 3 2 1 3 4 1 4 Pin connection V IF 50 mA 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 20 V 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –5 to +60 ˚C Storage temperature Tstg –15 to +65 ˚C Temperature 3 Unit PD*1 Collector current (2.54) (Note) ( ) Dimension is reference Absolute Maximum Ratings (Ta = 25˚C) Reverse voltage (DC) 2-0.45 SEC. A-A' 2 The external case is molded using visible light cutoff resin. The case has no openings, so the photosensor is not easily susceptible to output attenuation resulting from dust or particles Parameter 2-C0.5 A' (15.5) 3.0 min. Wide gap between emitting and detecting elements, suitable for thick plate detection Gap : 10mm 6.2±0.25 (2.0) 19.0±0.35 10.0±0.3 A *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions typ max Unit 1.2 1.5 V VR = 3V 10 µA VCE = 10V, IF = 0mA, ID = 0mA*1 200 nA Forward voltage (DC) VF IF = 50mA IR Collector cutoff current Output characteristics Collector to emitter capacitance ICEO CC VCE = 10V, f = 1MHz Collector current IC VCE = 10V, IF = 20mA, RL = 100Ω Input characteristics Reverse current (DC) Transfer Response time tr , tf*2 VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA *1 *2 min 5 pF 1.0 mA µs 6 0.4 V ID : Leakage current due to scattered light Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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