DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ORDER CODE DB-900-80W MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC) Symbol Parameter Value Unit VDD Supply voltage 32 V ID Drain Current 9 A 135 W PDISS Power dissipation at Tcase = +85°C TCASE Operating Case Temperature Pamb Max. Ambient Temperature November, 20 2002 -20 to +85 o +55 o C C 1/6 DB-900-80W ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA) Symbol Test Conditions FREQ. Min. Typ. Max. Unit 894 MHz Frequency Range 869 Gain POUT = 80 W 13 14 dB P1dB Over frequency range: 869 - 894 MHz 80 90 W Flatness Over frequency range and @ POUT = 80 W Flatness POUT from 0.1W to 80 W ND at P1dB IRTL Harmonic VSWR Spurious IMD3 P1dB 45 +/- 0.5 dB 1 dB 50 % Input return Loss POUT from 0.1W to 80 W -20 -15 dB POUT = 80 W -40 -30 dBc 10:1 VSWR all phases and POUT from 0.1 to 80W -76 dBc POUT = 80 WPEP -25 dBc Load Mismatch all phases @ POUT = 80 W 10:1 TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA) Pout CH PWR Pin CH PWR Pout CH PWR ACPR -750 KHz ACPR +750 KHz ACPR -1.98 MHz ACPR +1.98 MHz (MHz) (W) (dBm) (dBm) (dBc) (dBc) (dBc) (dBc) (A) (%) 865 0.63 16.3 28.0 50.5 51.5 71 70 0.64 3.79 875 0.63 15.7 28.0 52.0 53.0 71 71 0.61 3.98 885 0.63 15.3 28.0 54.0 55.0 71 71 0.60 4.04 895 0.63 14.9 28.0 55.0 54.5 72 72 0.58 4.18 865 3.98 23.3 36.0 49.0 51.0 68.0 68.0 1.42 10.78 875 3.98 23.0 36.0 49.5 51.5 68.0 68.0 1.37 11.18 885 3.98 22.6 36.0 52.0 54.0 69.0 69.0 1.32 11.60 895 3.98 22.3 36.0 52.0 54.0 70.0 70.0 1.26 12.15 865 15.85 28.9 42.0 45 45 63 63 2.76 22.09 875 14.79 28.3 41.7 45 45 64 64 2.59 21.96 885 14.13 28.2 41.5 45 45 65 65 2.50 21.73 895 14.79 28.0 41.7 45 45 66 66 2.41 23.61 Frequency 2/6 Itotal Nd DB-900-80W TYPICAL PERFORMANCE Output Power vs. Input Power Power Gain vs. Input Power Pout (W) Gp (dB) 110 18 100 17 90 16 880 MHz 80 900 MHz 890 MHz 70 15 870 MHz 60 880 MHz 890 MHz 14 870 MHz 13 860 MHz 50 900 MHz 40 860 MHz 30 12 20 Vdd = 26 V Idq = 2 x 200 mA 11 Vdd = 26 V Idq = 2 x 200 mA 10 0 10 0 1 2 3 4 5 6 1 10 Pin (W) 100 1000 Pout (W) Power Gain vs. Frequency Efficiency vs. Frequency Gp (dB) Nd (%) 18 62 60 17 58 16 Pout = 100 W 56 Pout = 5 W 54 15 Pout = 90 W Pout = 80 W 52 14 50 Pout = 90 W 13 48 12 46 10 850 44 Vdd = 26 V Idq = 2 x 200 mA 11 860 870 880 f (MHz) 890 900 Pout = 80 W Vdd = 26 V Idq = 2 x 200 mA 42 910 40 850 860 870 880 890 900 910 f (MHz) 3/6 DB-900-80W TEST FIXTURE COMPONENT LAYOUT CV1 CV2 Ref. ETSA c07/2000 - Ed1 TEST CIRCUIT PHOTOMASTER Ref. ETSA c07/2000 - Ed1 4/6 DB-900-80W TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION T1, T2 PD57045S TRANSISTOR C1, C2, C23, C24 47pF - 500V CERAMIC CHIP CAPACITOR C3, C4 4.7pF - 500V CERAMIC CHIP CAPACITOR C5, C6, C17, C18 100pF - 500V CERAMIC CHIP CAPACITOR C7, C8, C9, C10, C11, C12, C13, C14 10pF - 500V CERAMIC CHIP CAPACITOR C15, C16 100nF - 63V CERAMIC CHIP CAPACITOR C19, C20 1µF / 35V ELECTROLYTIC CAPACITOR C21, C22 5.6pF - 500V CERAMIC CHIP CAPACITOR C26, C27 6.8pF - 500V CERAMIC CHIP CAPACITOR C25 0.5pF - 500V CERAMIC CHIP CAPACITOR CV1, CV2 ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V P1, P2 10K Ohms MULTITURN POTENTIOMETER R1,R7 100 Ohms 1/4W 1206 SMD CHIP RESISTOR R2 50 Ohms 30W - 4GHz LOAD R3, R4 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR R5, R6 10K Ohms 1/4W 1206 SMD CHIP RESISTOR D1, D2 ZENER DIODE 5V - 500 mW SOD80 SM1, SM2 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3 BOARD METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ SUBSTRATE TEFLON-GLASS Er = 2.55 BACK SIDE COPPER FLANGE 2 mm THICKNESS CERAMIC CHIP CAPACITORS ATC100B or EQUIVALENT 5/6 DB-900-80W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6