ETC GN01157S

GaAs MMICs for Cellular Phone
GN01157S
Driver Amplifier with AGC for 1.5 GHz-Band PDC
Features
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2-Stage Amplifier with High Output Auto Gain Controllable
Low consumption current : I DD = 35 mA
High gain : PG = 30 dB
Dynamic range : DR = 48 dB
Small package : S-Mini Type . 6-pin
Characteristics Diagram
POUT , ACP, GS  VAGC
POUT , ACP  PIN
130
IDD
110
20
100
IDD1
10
0
15
-10
90
0
80
POUT
-10
70
-20
60
GS
-30
50
-40
40
ACP1 (50 kHz)
-50
30
-60
POUT
10
-20
5
-30
0
-40
-5
-50
-10
-60
ACP1 (50 kHz)
-15
-70
20
-20
ACP2 (100 kHz)
-70
-80
0
0
0.5
1
1.5
2
2.5
-25
-30
3
-80
ACP2 (100 kHz)
10
Adjacent channel leakage power ACP (dBc)
IDD2
30
20
120
Output power POUT (dBm)
40
Gain control sensitivity GS (dB/V)
Output power POUT (dBm),
Adjacent channel leakage power ACP (dBc)
50
-90
-25
Gate control voltage VAGC (V)
-20
-15
-10
Max input power PIN (dBm)
Measurement Circuit Diagram
Package Outline
(0.425)
Unit: mm
0.12+0.05
–0.02
VDD1
5°
0.2±0.05
1.25±0.10
2.1±0.1
Introduce New Products
GaAs MMICs for Cellular Phone
1
2
VDD2
4
C3
C2
R1
L2
L1
0.2±0.1
5
6
Out
3
C1
(0.65) (0.65)
6
5
4
1
2
3
1.3±0.1
2.0±0.1
0.9±0.1
14
0 to 0.1
S-Mini Type.6-pin
0.9+0.2
–0.1
10°
1 : RF input
2 : GND
3 : VAGC
4 : VDD2
5 : GND
6 : VDD1
VAGC
IN
L3
R2
C4
C1 = 33 pF
C2 = 100 pF+10 nF
C3 = 100 pF+1000 pF
C4 = 10 nF
L 1 = 3.9 nH
L 2 = 33 nH
L 3 = 3 .9 nH
R1 = 62 Ω
R2 = 130 Ω