LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA total DC current. The LX5503E is available in a 16pin 3x3mm2 micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the micro-lead package make the LX5503E an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Advanced InGaP HBT 4.9-5.85GHz Operation Single-Polarity 3.3V Supply Total Current ~ 150mA for Pout=18dBm at 5.25GHz P1dB ~ +26dBm across 4.9~5.85GHz Power Gain ~ 21dB at 5.25GHz & Pout=18dBm Power Gain ~ 16dB at 5.85GHz & Pout=18dBm EVM ~ 3% for 64QAM/ 54Mbps & Pout=18dBm Excellent Temperature Performance Simple Input/Output Match Minimal External Components Optional low-cost LDO for Optimal System Performance 2 Small Footprint: 3x3mm Low Profile: 0.9mm WWW . Microsemi .C OM The LX5503E is a power amplifier optimized for high-efficiency lowpower applications in the FCC Unlicensed National Information Infrastructure (U-NII) band, Europe HyperLAN2, and Japan WLAN in the 4.9-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single supply of 3.3V with +26dBm of P1dB, and power gain of 21dB between 4.9-5.35GHz and 16dB up to 5.85GHz. APPLICATIONS/BENEFITS FCC-UNII Wireless IEEE 802.11a HiperLAN2 PRODUCT HIGHLIGHT TJ (°C) 0 to 70 LX5503E PACKAGE ORDER INFO Plastic MLPQ LQ 16-Pin LX5503E-LQ Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5503E-LQT) Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi .C OM DC Supply Voltage, RF off................................................................................6V Collector Current.........................................................................................500mA Total Power Dissipation....................................................................................3W RF Input Power ...........................................................................................10dBm Operation Ambient Temperature .......................................................-40 to +85°C Storage Temperature ..........................................................................-60 to 150°C 13 14 15 16 12 1 11 2 10 3 9 4 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 8 7 6 5 LQ PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION Name Pin # Description RF IN 2, 3 RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 6 Bias current control voltage for the first stage. VB2 7 Bias current control voltage for the second stage. The VB2 pin can be connected with VB1 into a single reference voltage (Vref) through an external resistor bridge. VCC 9 Supply voltage for the Bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF OUT 10, 11 VC1 15 Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (Vc). VC2 14 Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side. This pin can be combined with VC1 and VCC, resulting in a single supply voltage (Vc). GND Center Metal The center metal base of the MLPQ package provides both DC/RF ground as well as heat sink for the power amplifier. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA Copyright 2000 Rev. 1.0, 2003-02-12 RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET PARAMETER CONDITION Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm EVM at Pout=18dBm MIN. f 4.9 Pout 25 Bias Control Reference Current For Icq=100mA Small-Signal Gain Gain Flatness Over 200MHz Gain Variation Over Temperature -40 to +85 C o Input Return Loss Output Return Loss Reverse Isolation Pout = 18dBm Ramp-On Time 10~90% MIN. 5.35 5.7 26 25 TYP. MAX. 5.85 UNIT GHz 21 16 dB 3 3 % Ic_total 150 160 mA Icq 100 100 mA Iref 1.5 1.5 mA S21 19 15 dB ∆S21 +/-0.5 +/-0.5 dB ∆S21 S11 +/-1 +/-1 dB S22 -7 -8 S12 -35 -35 dB -40 -35 dBc -45 -45 dBc 100 100 ns Pout = 18dBm Third Harmonic MAX. dBm Gp Quiescent Current TYP. 26 64QAM/54Mbps Total Current at Pout=18dBm Second Harmonic SYMBOL tON -15 -10 -12 -10 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Icq = 100mA, TA = 25°C dB dB ELECTRICALS Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET 10 200 190 EVM Ictotal 8 180 7 170 6 160 5 150 4 140 3 130 2 120 1 110 0 Ictotal (mA) 9 EVM (%) WWW . Microsemi .C OM CHARACTERISTIC CURVES Typical EVM & Total Current vs. Output Power (Vc=3.3V, Icq=100mA, 64QAM/54Mbps) Freq=4.97GHz (EVM Test Set Limited to >4.97GHz) 100 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pout (dBm) 10 200 180 7 170 6 160 5 150 4 140 3 130 2 120 1 110 0 Ictotal (mA) EVM (%) 190 EVM Ictotal 8 Freq=5.25GHz Ictotal (mA) 9 Freq=5.85GHz 100 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pout (dBm) 12 220 11 EVM (%) 210 EVM Ictotal 10 200 9 190 8 180 7 170 6 160 5 150 4 140 3 130 2 120 1 110 100 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pout (dBm) Notes: All EVM data are for OFDM signal of 64QAM/54Mbps and are actual measured data without any de-embedding. Source EVM from is around 1.4~1.8% for the input power levels for test. Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 GRAPHS 0 LX5503E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET WWW . Microsemi .C OM CHARACTERISTIC CURVES Typical Power Sweep Data at Room Temperature (Vc=3.3V, Icq=100mA) Freq=4.97GHz Freq=5.25GHz Freq=5.85GHz GRAPHS Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARACTERISTIC CURVES WWW . Microsemi .C OM Typical P1dB vs. Supply Voltage (Vc=3.3V, Icq=100mA, Freq=5.25GHz) Typical EVM vs. Frequency (Vc=3.3V, Icq=100mA, Pout=18dBm, 64QAM/54Mbps) 28 4 EVM 27.5 3.75 27 P1dB (dBm) EVM (%) 3.5 3.25 3 26.5 26 25.5 25 2.75 24.5 2.5 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 24 5.85 3 3.2 3.4 Frequency (GHz) 3.6 3.8 4 Vc (V) Typical Small-Signal Gain vs. Supply Voltage (Vc=3.3V, Icq=100mA, Freq=5.25GHz) Typical P1dB vs. Frequency (Vc=3.3V, Icq=100mA) 21 27 20.75 [email protected] (dB) P1dB (dBm) 26.5 26 25.5 25 20.5 20.25 24.5 24 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 20 5.85 3 3.2 3.4 dB(S (1,2)) dB(S (2,2)) dB(S (1,1)) dB(S (2,1)) S21 (dB) 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 6.0 --40oC -20 - oC 0oC 25oC 85oC 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 fre q, GHz freq, GHz Copyright 2000 Rev. 1.0, 2003-02-12 4 GRAPHS 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 4.2 3.8 Typical Small-Signal Gain Variation Over Temperature (Vc=3.3V, Icq=100mA at Room Temperature) Typical S-Parameter Data at Room Temperature (Vc=3.3V, Icq=100mA) 4.0 3.6 Vc (V) Frequency (GHz) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARACTERISTIC CURVES WWW . Microsemi .C OM Typical EVM Variation Over Temperature (Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz) 10 -40oC -25oC 0oC 25oC 50oC 85oC 9 8 EVM (%) 7 6 5 4 3 2 1 0 13 14 15 16 17 18 19 20 21 Pout (dBm) Typical ACPR Variation Over Temperature (Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz) ACPR@30MHz (dBc) -40 -40oC -25oC 0oC 25oC 50oC 85oC -45 -50 -55 GRAPHS -60 13 14 15 16 17 18 19 20 21 Pout (dBm) Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5503E I N T E G R A T E D InGaP HBT 4 – 6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET LQ WWW . Microsemi .C OM PACKAGE DIMENSIONS 16-Pin MLPQ Plastic (3x3mm2 EP) A F E B H G I C D1 D MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.18 0.30 0 0.05 1.30 1.55 0.18 0.30 0.50 BSC 1.30 1.55 0.30 0.50 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.007 0.011 0 0.002 0.051 0.061 0.007 0.011 0.019 BSC 0.051 0.061 0.011 0.020 MECHANICALS Dim A B C D D1 E F G H I Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5503E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET WWW . Microsemi .C OM NOTES NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of application date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright 2000 Rev. 1.0, 2003-02-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9