Phototransistors PNZ0109 Silicon NPN Phototransistor Unit : mm ø5.08±0.15 4.8 max. For optical control systems Features High sensitivity 16.0±1.0 2.67±0.15 Wide spectral sensitivity The most suitable detector for GaAs LEDs Fast response : tr, tf = 3 µs (typ.) ø0.5±0.05 2-ø0.45 2.54 Wide directional sensitivity : θ = 80 deg. (typ.) 1.27 4. 8± 0. 15 Base pin for easy circuit design 2 1 3 ±3˚ 45˚ 1: Emitter 2: Base 2: Collector 03 2. Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 5 V Emitter to base voltage VEBO 5 V IC 20 mA Collector current Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current *2 min VCE = 10V, L = 500 lx*1 0.8 typ max Unit 0.05 1 µA 2 mA Peak sensitivity wavelength λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 80 deg. 3 Rise time tr*2 VCC = 10V, ICE(L) = 5mA Fall time tf*2 RL = 100Ω Collector saturation voltage *1 ICE(L) Conditions VCE = 10V VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 10 µs 3 10 µs 0.25 0.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,,,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) Please make a thorough study of the specifications. 1 Phototransistors PNZ0109 PC — Ta ICE(L) — VCE ICE(L) — L 80 60 40 20 PC = 100mW 10 ICE(L) (mA) 100 L =2000 lx 1750 lx 1500 lx 8 1250 lx 1000 lx 6 750 lx 4 500 lx 2 VCE = 10V Ta = 25˚C T = 2856K 10 2 Ta = 25˚C T = 2856K Collector photo current ICE(L) (mA) 12 Collector photo current Collector power dissipation PC (mW) 120 250 lx 10 1 10 –1 10 –2 100 lx 20 40 60 Ambient temperature 80 100 Ta (˚C ) 0 4 8 Dark current 10 –1 20 VCE = 10V Collector photo current 10 –2 0 40 80 Ambient temperature 10˚ 1 20 80 120 VCC = 10V Ta = 25˚C 50˚ 10 2 60˚ 70˚ 80˚ 90˚ RL = 1kΩ 500Ω 10 100Ω 1 10 –1 10 –2 10 –1 Collector photo current 2 80 60 40 1 0 200 400 600 800 1000 Wavelength λ (nm) Ta (˚C ) tr (µs) 40 40 tr — ICE(L) Rise time 60 Relative sensitivity S (%) 80 0 10 3 40˚ 100 VCE = 10V Ta = 25˚C 20 Ambient temperature 30˚ 10 4 Spectral sensitivity sharacteristics 100 500 lx Ta (˚C ) 20˚ 10 3 L (lx) L = 1000 lx Directivity characteristics 0˚ 10 2 10 Illuminance VCE = 10V T = 2856K 10 –1 – 40 120 1 VCE (V) 250 lx 10 –3 – 40 10 –3 24 ICE(L) — Ta 10 ICE(L) (mA) ICEO (µA) 1 16 Collector to emitter voltage ICEO — Ta 10 12 S (%) 0 0 Relative sensitivity 0 – 20 10 ICE(L) (mA) 1200