Select Products Here Go DESCRIPTION TOX 9108 Large Area Silicon Quadrant PIN Photodiode FEATURES The TOX 9108 is a high speed, quadrant-geometry, high-resistivity P-type silicon photodiode. It is a precision device designed specifically for application in laser alignment and guidance systems. A guard-rign structure is utilized to provide excellent low-noise characteristics. Operation in the fully depleted mode results in high speed and high radiant responsivity. Crosstalk between any two quadrants is less than five percent. Anti-reflection coatings on the photodiode surface, normally peaked for 1.06 µm wavelength, can be adjusted to customer specification. ● Quadrant geometry for alignment and tracking applications ● Diameter of active area, 0.650 inch ● Rise and fall time, 10 ns Typ at 900 nm wavelength ● Dark current 500 nA Typ per quadrant ● Radiant responsivity 0.40 A/W Typ at » = 1.06 ¼m, 0.50 A/W Typ at » =0.9 µm ● Sensitive to wavelengths from 0.60 µm to 1.06 µm ABSOLUTE MAXIMUM RATINGS Forward voltage.....................................................................................................0.5 V Reverse voltage.....................................................................................................250 V Continuous power dissipation per quadrant at (or below) 25° C case temperature (See note 1).......................................................................................................500mW Operating case temperature range...................................................................-65° C to 100° C Storage temperature range..............................................................................-65° C to 125° C Lead temperature 1/16 inch from case for 10 seconds............................................300° C Note:1. Derate linearly to 125 mW at 100° C case temperature at the rate of 5 mW/°C. http://www.texas-opto.com/catalog/tox9108/tox9108.asp (1 of 3) [2/6/2002 3:36:54 PM] ELECTRO-OPTICAL CHARACTERISTICS (TCASE = 25°C) TEST PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNITS IR = 100 ¼A, He = 0 V(BR) 250 500 VR = 180 V, He = 0 ID 500 1000 VR = 180 V, f = 1 MHz CT 15 20 VR = 180 V, » = 0.9 ¼ m, fmod Re .50 = 400 Hz Radiant Responsivity VR = 180 V, » = 1.06 ¼ m, fmod Re .40 = 400 Hz VR = 180 V, 2 Crosstalk 4 VR = 180 V, Uniformity 5 Note: 2. For all quadrants and guard ring 3. Per Quadrant 4. This is the response of the one dark quadrant relative to the one illuminated quadrant. Breakdown Voltage 2 Dark Current 3 Total Capacitance V nA pF A/W % % SWITCHING CHARACTERISTICS AT 25 °C CASE TEMPERATURE TEST PARAMETER CONDITIONS Rise Time Fall Time IR = 100 ¼A, RL = 50 © IR = 100 ¼A, RL = 50 © SYMBOL MIN TYP MAX » = 0.9 ¼m » = 1.06 ¼m » = 0.9 ¼m » = 1.06 ¼m tr tf UNITS 10 15 10 15 Each quadrant was measured independently, but the characteristics apply as well to each quadrant when all are operated simultaneously. http://www.texas-opto.com/catalog/tox9108/tox9108.asp (2 of 3) [2/6/2002 3:36:54 PM] ns ns 714 Shepherd Drive * Garland, Texas 75042 * 972/487-0085 http://www.texas-opto.com/catalog/tox9108/tox9108.asp (3 of 3) [2/6/2002 3:36:54 PM]