N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0535A 800 400 600 ID(On)Drain Current (mA) VGS= 10V 8V 6V 700 5V 500 400 300 4V 200 100 3V VGS= 10V 6V 5V 300 0 10 20 30 40 50 60 70 80 90 ABSOLUTE MAXIMUM RATINGS. 100 3V 0 4 12 16 20 SYMBOL Drain-Source Voltage VDS VALUE 350 UNIT V Continuous Drain Current at Tamb=25°C ID 90 mA VDS - Drain Source Voltage (Volts) Pulsed Drain Current IDM 600 mA Output Characteristics Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 500 16 ID= 250mA 12 8 4 100mA 50mA VDS= 25V 400 4 6 8 10 SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 350 200 Gate-Source Threshold Voltage VGS(th) 1 100 Gate-Body Leakage Zero Gate Voltage Drain Current 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 250 80 60 Ciss 40 20 Coss Crss 0 10 20 30 40 gfs-Transconductance (mS) 100 VDS-Drain Source Voltage (Volts) 3 V ID=1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS 10 400 µA µA VDS=350 V, VGS=0 VDS=280 V, VGS=0V, T=125°C(2) mA VDS=25 V, VGS=10V Ω VGS=10V,ID=100mA mS VDS=25V,ID=100mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) 150 50 100 Input Capacitance (2) Ciss 70 pF 100 Common Source Output Capacitance (2) Coss 10 pF Reverse Transfer Capacitance Crss (2) 4 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) td(off) 16 ns Fall Time (2)(3) tf 10 ns 50 0 100 200 300 400 500 Transconductance v drain current 3-354 ID=1mA, VGS=0V 150 ID(on)- Drain Current (mA) Capacitance v drain-source voltage MAX. UNIT CONDITIONS. V Forward Transconductance(1)(2gfs ) VDS= 25V 200 0 50 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER 300 0 2 0 PARAMETER VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 8 S E-Line TO92 Compatible 200 100 20 0 D G 4V 0 0 ID(On) Drain Current (mA) VDS-Drain Source Voltage (Volts) ID(On) On-State Drain Current (mA) TYPICAL CHARACTERISTICS ZVN0535A ISSUE 2 MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=50Ω 3-353 VDS=25 V, VGS=0V, f=1MHz VDD ≈ 25V, ID=100mA ( 1 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0535A 800 400 600 ID(On)Drain Current (mA) VGS= 10V 8V 6V 700 5V 500 400 300 4V 200 100 3V VGS= 10V 6V 5V 300 0 10 20 30 40 50 60 70 80 90 ABSOLUTE MAXIMUM RATINGS. 100 3V 0 4 12 16 20 SYMBOL Drain-Source Voltage VDS VALUE 350 UNIT V Continuous Drain Current at Tamb=25°C ID 90 mA VDS - Drain Source Voltage (Volts) Pulsed Drain Current IDM 600 mA Output Characteristics Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 500 16 ID= 250mA 12 8 4 100mA 50mA VDS= 25V 400 4 6 8 10 SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 350 200 Gate-Source Threshold Voltage VGS(th) 1 100 Gate-Body Leakage Zero Gate Voltage Drain Current 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 250 80 60 Ciss 40 20 Coss Crss 0 10 20 30 40 gfs-Transconductance (mS) 100 VDS-Drain Source Voltage (Volts) 3 V ID=1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS 10 400 µA µA VDS=350 V, VGS=0 VDS=280 V, VGS=0V, T=125°C(2) mA VDS=25 V, VGS=10V Ω VGS=10V,ID=100mA mS VDS=25V,ID=100mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) 150 50 100 Input Capacitance (2) Ciss 70 pF 100 Common Source Output Capacitance (2) Coss 10 pF Reverse Transfer Capacitance Crss (2) 4 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) td(off) 16 ns Fall Time (2)(3) tf 10 ns 50 0 100 200 300 400 500 Transconductance v drain current 3-354 ID=1mA, VGS=0V 150 ID(on)- Drain Current (mA) Capacitance v drain-source voltage MAX. UNIT CONDITIONS. V Forward Transconductance(1)(2gfs ) VDS= 25V 200 0 50 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER 300 0 2 0 PARAMETER VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 8 S E-Line TO92 Compatible 200 100 20 0 D G 4V 0 0 ID(On) Drain Current (mA) VDS-Drain Source Voltage (Volts) ID(On) On-State Drain Current (mA) TYPICAL CHARACTERISTICS ZVN0535A ISSUE 2 MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=50Ω 3-353 VDS=25 V, VGS=0V, f=1MHz VDD ≈ 25V, ID=100mA ( 1 ZVN0535A TYPICAL CHARACTERISTICS 10 VGS-Gate Source Voltage (Volts) gfs-Forward Transconductance (mS) VDS=100V 200V 360V 250 VDS=25V 200 150 100 50 0 2 4 6 8 10 6 4 2 0 0 VGS-Gate Source Voltage (Volts) 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 Q-Charge (nC) Transconductance v gate-source voltage Gate charge v gate-source voltage 100 90 80 70 60 2.4 ID= 250mA 50 40 100mA 50mA 30 20 10 1 2 3 4 5 6 7 8 9 10 20 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) ID=500mA 8 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage ) on S( 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ce ur So ni a Dr Gate T hre ce an st si e R RD VGS=10V ID=0.1A VGS=VDS ID=1mA shold V oltage V GS(th ) 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj-Junction Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3-355