P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424A ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS(on)=9Ω * Low threshold APPLICATIONS * Electronic Hook Switch D G PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -240 V ID -200 mA Pulsed Drain Current IDM -1 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 750 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -240 Gate-Source Threshold Voltage VGS(th) -0.7 TYP -1.4 MAX. UNIT -2.0 G S Continuous Drain Current at Tamb=25°C PARAMETER ZVP4424C ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS(on)=9Ω * Low threshold APPLICATIONS * Electronic Hook Switch E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET D S E-Line TO92 Compatible REFER TO ZVP4424A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -240 V Continuous Drain Current at Tamb=25°C ID -200 mA Pulsed Drain Current IDM -1 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 750 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). CONDITIONS. PARAMETER SYMBOL MIN. V ID=-1mA, VGS=0V Drain-Source Breakdown Voltage BVDSS -240 V ID=-1mA, VDS= VGS Gate-Source Threshold Voltage VGS(th) -0.7 TYP -1.4 MAX. UNIT -2.0 CONDITIONS. V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V Zero Gate Voltage Drain Current IDSS -10 -100 µA µA VDS=-240 V, VGS=0 VDS=-190V, VGS=0V, T=125°C Zero Gate Voltage Drain Current IDSS -10 -100 µA µA VDS=-240 V, VGS=0 VDS=-190V, VGS=0V, T=125°C A VDS=-10 V, VGS=-10V On-State Drain Current ID(on) A VDS=-10 V, VGS=-10V 9 11 Ω Ω VGS=-10V,ID=-200mA VGS=-3.5V,ID=-100mA Static Drain-Source On-State Resistance RDS(on) Ω Ω VGS=-10V,ID=-200mA VGS=-3.5V,ID=-100mA mS VDS=-10V,ID=-0.2A Forward Transconductance (1) (2) gfs mS VDS=-10V,ID=-0.2A On-State Drain Current ID(on) Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs -0.75 -1.0 7.1 8.8 125 -0.75 -1.0 7.1 8.8 9 11 125 Input Capacitance (2) Ciss 100 200 pF Input Capacitance (2) Ciss 100 200 pF Common Source Output Capacitance (2) Coss 18 25 pF Common Source Output Capacitance (2) Coss 18 25 pF Reverse Transfer Capacitance (2) Crss 5 15 pF Reverse Transfer Capacitance (2) Crss 5 15 pF VDS=-25V, VGS=0V, f=1MHz Turn-On Delay Time (2)(3) td(on) 8 15 ns Turn-On Delay Time (2)(3) td(on) 8 15 ns Rise Time (2)(3) tr 8 15 ns Rise Time (2)(3) tr 8 15 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Fall Time (2)(3) tf 20 30 ns Fall Time (2)(3) tf 20 30 ns VDD ≈−50V, ID =-0.25A, VGEN=-10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-436 VDS=-25V, VGS=0V, f=1MHz VDD ≈−50V, ID =-0.25A, VGEN=-10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-439