ETC 22271

AMD DL160 and DL320 Series Flash:
New Densities, New Features
Technology Background
July 2003
The following document refers to Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Continuity of Specifications
There is no change to this document as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal documentation improvements and are noted
in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 22271 Revision A
Amendment 0 Issue Date October 1, 1998
AMD DL160 and DL320 Series Flash:
New Densities, New Features
Am29DL16x and Am29DL32x Series: New Densities, New Features
The DL160 series and DL320 series are the newest devices in the family of low power
Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
revolutionary design techniques used in the Am29DL400 and Am29DL800 flash memories.
These techniques enable the Flash device to perform two operations simultaneously (read
while program or erase), allowing the system to achieve true background program/erase while
executing directly out of the Flash device. Such capability allows system designers to combine
the functionality of other memory components—such as EEPROM—into Flash, resulting in
simpler, lower cost, and higher performance system implementations. In addition, the new
high density devices introduce several new features. These include the new 64 KB SecSiTM
(Secured Silicon) Sector, Sliding Bank Architecture, an accelerated program function, and
hardware boot sector protection. In addition to these new hardware features, AMD now offers
Data Management Software (DMS) to simplify user written software. The Am29DL family is
ideal for a variety of embedded applications, especially applications requiring secure device
identification such as cellular phones and set top boxes.
The design of the Am29DL flash family is based on AMD’s industry-standard, 2.7 volt-only
0.32 µm Flash memory technology. The devices offer single-power-supply operation (2.7 V to
3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000
program/erase cycle endurance guarantee. The devices also inherit the industry leading, low
energy consumption characteristics of the Am29LV family, making it the ideal choice for
system designers who need to minimize energy consumption in portable- and battery-powered
The DL160 series and DL320 series devices offer the following:
❏ True simultaneous operation that minimizes system overhead and improves
system performance
– Device reads from one bank while programming/erasing another
No need to manage erase suspend and resume
❏ Zero latency between program/erase and read
– The last program/erase command cycle can be followed immediately by read
❏ Dual-bank architecture with multiple bank size options
❏ 64 KB SecSi Sector
– Extra space to store a secure Electronic Serial Number, permanently store code, or
store data like any other flash sector.
Am29DL16x and Am29DL32x Series: New Densities, New Features
❏ Data Management Software
– Provides file management capabilities and simplifies user written system software
❏ Faster Factory Programming with Accelerated Program Mode and Unlock
Bypass Mode
❏ Low current consumption
– 200 nA typical standby current
7 mA typical read current
❏ High performance—access times as fast as 70 ns
Table 1. DL160 and DL320 Series Device Bank Sizes
Bank 1 (Mb)
Bank 2 (Mb)
Note: Additional bank splits may be available based on demand. Please contact an AMD
representative for more information.
Simultaneous Read/Write Technology
AMD achieved significant design advances with Simultaneous Read/Write technology. From
the system’s perspective, Am29DL products behave as if there were two separate Flash
devices inside the package operating independently. The system can program or erase one or
more sectors in one bank while reading from the other bank with zero latency when switching
between banks. Internally, the simultaneous operations are accomplished with minimal
duplication of device functional blocks. Like other AMD Flash devices, there is only one high
voltage circuit for program and erase, one state machine that manages device operations, one
address decoder, one set of output drivers, and so on. Key functional blocks are shared so that
the die size is minimized. This feature is important since AMD targets the Am29DL family at
cost sensitive applications.
Externally, the Am29DL family’s pinouts are identical to that of the industry standard
Am29LV family. There is only one set of address bus, data bus, and control signals.
Accordingly, only a single chip enable (CE#) is necessary to address and initiate operations in
Am29DL16x and Am29DL32x Series: New Densities, New Features
either bank. Standard microprocessor write timings are used to set up program and erase
operations. The upper bits of the address field specify the bank in which read, program or
erase operation will take place. After appropriate commands have been sent for the program/
erase operation in the bank specified, the other bank is still available for read operations.
In a typical embedded application, the memory system may contain EEPROM for data storage
and Flash for control code storage. With the Am29DL family, space can be structured to store
data and boot code in bank 1 and control code in bank 2. The command sequence that tells
bank 1 to program/erase data sectors resides as executable code in bank 2. While bank 1 is
being programmed/erased, the system can continue to execute code from bank 2 to manage
other system operation (depending on the system implementation, the CPU can also execute
code from bank 1 and program/erase bank 2). There is no bank switching latency. There is no
need to suspend program or erase operation. The CPU’s read and write cycles can be
maximized. The overall system cost is lowered because the EEPROM is eliminated. This is
truly a Simultaneous Read/Write solution!
New High Density Device Features
SecSi Sector
The DL160 series and DL320 series memory products provide an extra 64 KB sector called
the SecSi (Secured Silicon) Sector. The SecSi Sector is unique since it can be programmed
and permanently locked prior to shipment by AMD, or by the customer. To guarantee that a
Customer Lockable part cannot be used to clone a Factory Locked part, the SecSi Indicator
Bit (DQ7) is permanently set to a “0” for Customer Lockable parts, and to a “1” for Factory
Locked parts.
The Factory Locked version offers several options to customers. Factory locked parts can be
shipped with a secure 16-byte Electronic Serial Number, with custom code programmed
through AMD’s ExpressFlash Service, or both. For applications that require device
identification to prevent cloning, AMD programs the SecSi Sector with a secure 16-byte
Electronic Serial Number. To prevent fraud, operating code should check that the SecSi
Indicator Bit is programmed to a “1” (indicating a valid, Factory Locked device) then verify
the ESN. This anti-cloning feature is ideal for devices such as cellular phones and set top
In applications susceptible to data corruption by external sources (such as computer viruses)
the Factory Locked SecSi Sector can be used to store backup code. Since this sector can
Am29DL16x and Am29DL32x Series: New Densities, New Features
never be changed, this code is completely safe from corruption. Systems can be designed to
utilize this sector as a backup that calls for downloading of new system code when system
code fails or is corrupted. Using the SecSi Sector this way ensures that corrupted system code
will not require physical replacement of the flash. Finally, Factory Locked parts are available
with a combination of both the ESN and ExpressFlash Service options.
Customer Lockable parts provide an altogether different set of options. Customers can utilize
the space to initiate their own scheme of Electronic Serial Numbers, or install their own
permanently locked code. Perhaps this option’s greatest value is to utilize the extra 64 KB as
bonus flash array space. Instead of buying a 16 Mb or 32 Mb part, customers actually realize a
16.5 Mb or 32.5 Mb part. This added space provides flexibility to support system code or data
storage requirement that’s grown just a little too big. Instead of migrating up to a higher
density product, and wasting a lot of money and memory space, system designers can include
the DL160 series and DL320 series in their existing product and delay density upgrades.
Sliding Bank Architecture
The DL160 series and DL320 series are designed with AMD’s unique Sliding Bank
Architecture. This architecture allows AMD to offer different bank sizes by applying different
final metal masks. Sliding bank architecture allows customers to choose a part with the bank
sizes that best fit their application. Initially, AMD will offer two devices in each density. Other
bank options are available, and will be released given sufficient customer demand.
Storing code in one bank and data in another ensures that systems take full advantage of
simultaneous operation. However, different applications will have different code and data size
requirements. Thus, AMD offers multiple bank sizes. For example, cellular phones require
more data storage space to accommodate the increased functionality of voice messaging,
alphanumeric pages, and personal phone books. By offering similar products utilizing
differently banked memory, OEMs may easily differentiate products by the amount of data
they can store. (See Table 1 for device bank sizes.)
Write Protect Function
The Write Protect function provides hardware protection for two of the 8 KB boot sectors
when the WP#/ACC pin is driven to VIL (top 2 boot sectors in a top boot device, bottom 2 boot
sectors in a bottom boot device). This extra hardware protection method ensures that critical
boot code cannot be lost due to some software glitch. The two sectors can only be updated if
the WP#/ACC pin is driven to VIH.
Am29DL16x and Am29DL32x Series: New Densities, New Features
Accelerate Function
To speed factory throughput, the DL160 series and DL320 series include an Accelerate
function, also accessible through the WP#/ACC pin. Driving this pin to VHH (8.5 V to 9.5 V)
achieves a 56% increase in factory throughput.
Low Power Consumption
The Am29DL family operates with very low power consumption in both the active as well as
the inactive states. The active modes (read, program, and erase operations) provide a
significant reduction in power consumption versus competitive 3 volt offerings. A design
technique called Address Transition Detection (ATD), saves power during program and read
operations. ATD achieves power savings by analyzing the programming task and providing
the optimal programming pulse (and thus the minimum power) required to complete the byte
or word programming operation without sacrificing programming performance.
To minimize power consumption in the inactive states, the Am29DL family provides two
power saving modes—Zero Power Operation Mode, and Standby Mode. Zero Power
Operation automatically puts the device in sleep mode (ICC = 200nA) whenever the device is
inactive for more than tACC + 30ns. Standby Mode is a current-controlled method of entering
sleep mode, requiring CE# and RESET# to be held at VCC±0.3V. Both these modes require no
latent period (or “wake up”) before they are ready to read. These techniques enable AMD to
offer the most efficient flash memory chips on the market.
Standard Architecture
The Am29DL family is based on the same process technology and industry standard
architecture as AMD’s 2.7 volt-only family of Flash devices. It offers the following standard
❏ JEDEC single-power-supply standard for pinout and software commands.
❏ Two memory arrays (banks) that are segmented into smaller sectors for erase
operation. This feature allows for modular code development, storage of boot code,
parameters, and main code in different sectors, and the ability to write protect any or
all sectors of the device.
The Am29DL family conforms to AMD’s stringent reliability requirements. AMD
Am29DL16x and Am29DL32x Series: New Densities, New Features
❏ A minimum endurance of 1,000,000 program/erase cycles. This equates to higher
reliability in systems that rewrite data to the Flash device, even if they rewrite only
❏ 20 year data retention at 125° C, resulting in reliable operation for the life of the
The introduction of the DL160 series and DL320 series extend the Simultaneous Read/Write
family and offer significant benefits to customers. They offer all the standard features and low
energy consumption characteristics that are typical of AMD’s 2.7 volt-only technology. Like
all of the DL family, the new 16 Mb and 32 Mb products make it easy for designers to lower
cost by displacing other memory devices like EEPROMs and SRAMs.
The new high density devices offer new features such as Accelerated Programming which
speeds factory throughput by 56%. The new SecSi Sector protects against cloning and
provides extra space for code storage. Beyond these features, the 16 Mb and 32 Mb devices
were designed with Sliding Bank Architecture, allowing customers to choose the device that
best fits their unique code and data storage requirements. These innovations continue to
demonstrate AMD’s leadership in NOR flash technology.
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