Transistors 2SB0745, 2SB0745A (2SB745, 2SB745A) Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 2SB0745 (1.0) R 0.9 Symbol Rating Unit VCBO −35 V 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 −55 2SB0745A Collector-emitter voltage 2SB0745 (Base open) 2SB0745A VCEO Emitter-base voltage (Collector open) −35 V −55 3 2 (2.5) VEBO −5 V Collector current IC −50 mA Peak collector current ICP −200 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (0.4) (1.5) 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter (1.0) (1.5) 1.0±0.1 • Low noise voltage NV • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Collector-base voltage (Emitter open) 2.5±0.1 6.9±0.1 ■ Features 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions VCBO IC = −10 µA, IE = 0 VCEO IC = −2 mA, IB = 0 VEBO IE = −10 µA, IC = 0 Base-emitter voltage VBE VCE = −1 V, IC = −100 mA Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 Forward current transfer ratio * hFE VCE = −5 V, IC = −2 mA Collector-base voltage (Emitter open) 2SB0745 Collector-emitter voltage (Base open) 2SB0745 Transition frequency VCE(sat) Unit V −35 V VCE = −10 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT NV −5 V − 0.7 180 IC = −100 mA, IB = −10 mA VCB = −5 V, IE = 2 mA, f = 200 MHz fT Noise voltage Max −55 2SB0745A Collector-emitter saturation voltage Typ −35 −55 2SB0745A Emitter-base voltage (Collector open) Min −1.0 V − 0.1 µA −1 µA 700 − 0.6 150 V MHz 150 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE 180 to 360 260 to 520 360 to 700 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00050BED 1 2SB0745, 2SB0745A PC Ta IC VCE IC I B −160 500 −160 Ta = 25°C Collector current IC (mA) 300 200 −120 −300 µA −250 µA −100 −200 µA −80 −150 µA −60 −100 µA −40 Collector current IC (mA) Collector power dissipation PC (mW) IB = −350 µA 400 −120 −80 −40 100 −50 µA −20 20 40 60 0 80 100 120 140 160 −2 0 Ambient temperature Ta (°C) −6 −8 −10 VCE = −5 V Ta = 25°C Collector current IC (mA) Base current IB (µA) −600 −400 −200 VCE = −5 V 25°C Ta = 75°C − 0.2 − 0.4 − 0.6 − 0.8 −25°C −80 −60 −40 0 − 0.4 − 0.8 hFE IC VCE = −5 V Ta = 75°C 300 25°C −25°C 200 100 0 − 0.1 −1 −10 Collector current IC (mA) −100 −1.6 −2.0 −1 Ta = 75°C 25°C −25°C − 0.01 − 0.1 −10 −100 Cob VCB VCB = −5 V Ta = 25°C 300 200 100 1 −1 Collector current IC (mA) 400 0 0.1 − 0.5 −10 fT I E 500 400 −1.2 500 Transition frequency fT (MHz) Forward current transfer ratio hFE 600 − 0.4 IC / IB = 10 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) − 0.3 −100 − 0.1 0 −1.0 − 0.2 Base current IB (mA) VCE(sat) IC −20 0 − 0.1 0 IC VBE −120 −100 0 0 −12 Collector-emitter voltage VCE (V) IB VBE −800 −4 Collector-emitter saturation voltage VCE(sat) (V) 0 10 Emitter current IE (mA) SJC00050BED 100 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 2 VCE = −5 V Ta = 25°C −140 20 IE = 0 f = 1 MHz Ta = 25°C 16 12 8 4 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 2SB0745, 2SB0745A NV VCE NV VCE NV IC 160 160 80 22 kΩ Noise voltage NV (mV) Rg = 100 kΩ Rg = 100 kΩ 200 160 120 80 22 kΩ 40 4.7 kΩ 120 Rg = 100 kΩ 80 22 kΩ 40 4.7 kΩ 4.7 kΩ −10 0 −1 −100 Collector-emitter voltage VCE (V) NV Rg NV Rg 160 VCE = −10 V GV = 80 dB Function = RIAA Noise voltage NV (mV) 160 Rg = 100 kΩ 22 kΩ 40 0 − 0.01 120 80 IC = −1 mA 40 − 0.5 mA 4.7 kΩ − 0.1 Collector current IC (mA) −1 0 240 200 160 120 80 IC = −2 mA 40 − 0.1 mA 0 1 −1 VCE = −10 V GV = 80 dB Function = RIAA 280 VCE = −10 V GV = 80 dB Function = FLAT 200 80 − 0.1 Collector current IC (mA) 240 120 0 − 0.01 −100 Collector-emitter voltage VCE (V) NV IC 280 −10 Noise voltage NV (mV) 0 −1 Noise voltage NV (mV) VCE = −10 V GV = 80 dB Function = FLAT 240 120 40 IC = −1 mA GV = 80 dB Function = RIAA 280 Noise voltage NV (mV) Noise voltage NV (mV) IC = −1 mA GV = 80 dB Function = FLAT 10 100 Signal source resistance Rg (kΩ) SJC00050BED − 0.5 mA − 0.1 mA 1 10 100 Signal source resistance Rg (kΩ) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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