2SC5161 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5161 !External dimensions (Units : mm) 6.5±0.2 5.1+0.2 −0.1 2.3+0.2 −0.1 C0.5 2.5 1.5 0.65±0.1 0.75 9.5±0.5 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (Ic / IB =1A / 0.2A) 2) High breakdown voltage. BVCEO = 400V 3) Fast switching. tf ≤ 1.0µs (Ic = 0.8A) 0.9 0.5±0.1 2.3±0.2 2.3±0.2 !Structure Three - layer, diffused planar type. NPN silicon transistor. 1.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : CPT 3 EIAJ : SC-63 !Absolute maximum (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 2 A(DC) 4 A(Pulse) 1 W Collector current ICP Collector power dissipation PC Junction temperature Tj 150 ˚C Storage temperature Tstg -55~+150 ˚C * Single pulse Pw=10ms 10 * W(Tc=25˚C) 2SC5161 Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 - - V IC=50µA Collector-emitter breakdown voltage BVCEO 400 - - V IC=1mA Emitter-base breakdown voltage BVEBO 7 - - V IE=50µA Collector curoff current ICBO - - 10 µA VCB=400V Emitter cutoff current IEBO - - 10 µA VEB=7V Base-emitter saturation voltage VCE(sat) - - 1 V IC/IB=1A/0.2A Collector-emitter saturation voltage VBE(sat) - - 1.5 V IC/IB=1A/0.2A VCE=5V, IC=0.1A hFE 25 - 50 - Transition frequency fT - 10 - MHz DC current transfer ratio VCE=10V,IE=-0.5A,f=5MHz * Output capacitance Cob - 30 - pF VCB=10V, IE=0A, f=1MHz Turn-on time ton - - 1 µs Storage time tstg - - 2.5 µs tf - - 1 µs IC=0.8A, RL=250Ω IB1= -IB2=0.08A VCC 200V Refer to measurement circuit diagram Fall time * Measured using pulse current. !Packaging specifications and hFE Packaging name Taping Symbol Type hFE 2SC5161 B TL Basic ordering unit (pieces) 2500 hfe values are classified as follows : Item B hFE 25~50 !Electrical characteristic curves 10 5 COLLECTOR CURRENT : IC (A) 0.6 VCEO(SUS) 0.4 0.2 0 0 Ta=25˚C L=1mH 100 200 300 400 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Reverse bias safe operating area 1 Ta=100˚C 0.5 0.2 25˚C 0.1 0.05 -25˚C 0.02 0.01 0.005 0.002 0.001 0 2.0 VCE=5V 2 0.8 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.0 Tc=25˚C 180mA 120mA 1.6 80mA 1.2 60mA 40mA 0.8 20mA 0.4 IB=10mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Grounded emitter propagation characteristics 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics 2SC5161 1000 Ta=25˚C 500 500 200 200 DC CURRENT GAIN : hFE 100 50 20 10 VCE=10V 5V 5 Ta=25˚C Ta=100˚C 25˚C -25˚C 100 50 20 10 5 2 2 1 0.01 0.02 0.05 0.1 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.5 1 2 1000 10 TRANSITION FREQUENCY : fT (MHz) Ta= -25˚C 25˚C˚ 100˚C 0.5 0.2 0.1 0.05 100˚C 25˚C -25˚C 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) 500 2 1 0.5 100 50 20 10 5 2 -0.5 -1 EMITTER CURRENT : IE (A) Fig.7 Collector-emitter saturation voltage vs.collector current Base-emitter saturation voltage vs. collector current IC/IB=10 0.2 0.1 5 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 1000 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 RL=250Ω TURN ON TIME : ton (µs) STORAGE TIME : tstg (µs) FALL TIME : tf (µs) IC VIN IB1 1 T.U.T. tf 0.2 ton IB2 PW PW 50µs duty cycle≤1% 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 50 100 Fig.9 Collector output capacitance vs. collector-base voltage 2 0.5 20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Gain bandwidth product vs. emitter current tstg 10 200 IC=10IB1=-10IB2 Pulse 5 5 Ta=25˚C f=1MHz IE=0A 500 !Switching characteristics measurement circuit 10 2 Fig.6 Collector-emitter saturation voltage vs. collector current 200 1 -0.001 -0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 Ta=25˚C 5 COLLECTOR CURRENT : IC (A) Ta=25˚C VCE=10V IC/IB=5 5 1 10 Fig.5 DC current gain vs. collector current ( II ) Fig.4 DC current gain vs. collector current ( I ) 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat ) (V) Transistors IB1 Base current wave form IB2 COLLECTOR CURRENT : IC (A) 90% Fig.10 Switching time vs. collector current IC Collector current wave form 10% ton tstg tf VCC 200V