ETC 2SC5186(NE68719)

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
• Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 3-pin ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5186
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC5186-T1
3 kpcs/reel
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
IC
30
mA
90
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
 NEC Compound Semiconductor Devices 1994, 2003
2SC5186
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
–
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
–
100
nA
VCE = 2 V, IC = 20 mA
70
–
140
–
VCE = 2 V, IC = 20 mA, f = 2 GHz
9
11
–
GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
7
9
–
GHz
Note 1
hFE
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
fT
Gain Bandwidth Product (2)
fT
Insertion Power Gain (1)
S21e
VCE = 2 V, IC = 20 mA, f = 2 GHz
8.5
10
–
dB
Insertion Power Gain (2)
S21e2
VCE = 1 V, IC = 10 mA, f = 2 GHz
6.0
7.5
–
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
–
1.3
2.0
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
–
1.3
2.0
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.4
0.8
pF
2
Reverse Transfer Capacitance
Note 2
Cre
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
2
Rank
FB
Marking
86
hFE Value
70 to 140
Data Sheet PU10213EJ01V0DS
2SC5186
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
250
Free Air
200
150
100
90
50
0
25
50
75
100
125
150
0.8
f = 1 MHz
0.6
0.4
0.2
0
2
4
6
8
10
Ambient Temperature TA (˚C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
50
40
Collector Current IC (mA)
Collector Current IC (mA)
VCE = 2 V
30
20
10
20
200 µ A
180 µ A
160 µ A
140 µ A
120 µ A
100 µ A
80 µ A
60 µ A
40 µ A
15
10
5
IB = 20 µ A
0
0.5
1.0
0
1
3
2
4
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
200
VCE = 2 V
100
50
1V
20
Gain Bandwidth Product fT (GHz)
DC Current Gain hFE
500
f = 2 GHz
15
VCE = 2 V
1V
10
5
10
1
2
5
10
20
50
100
0.7
Collector Current IC (mA)
1
2
3
5
7
10
20 30
Collector Current IC (mA)
Data Sheet PU10213EJ01V0DS
3
2SC5186
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
f = 2 GHz
VCE = 2 V
10
Noise Figure NF (dB)
Insertion Power Gain |S21e|2 (dB)
3
f = 2 GHz
1V
5
2
VCE = 1 V
2V
1
0
0.7
1
2
3
5
7
10
20 30
0.5
1
2
3
5
7
10
20 30
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10213EJ01V0DS
2SC5186
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (UNIT: mm)
1.6±0.1
0.8±0.1
0.3+0.1
–0
0.2+0.1
–0
0.5
0.5
1.0
86
3
0.15+0.1
–0.05
0 to 0.1
0.6
1
0.75±0.05
1.6±0.1
2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Data Sheet PU10213EJ01V0DS
5
2SC5186
• The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
6
Data Sheet PU10213EJ01V0DS
2SC5186
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0209