ETC 2SC5761(NESG2030M04)

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for low noise ⋅ high-gain amplification
NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5761
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC5761-T2
3 kpcs/reel
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
8.0
V
Collector to Emitter Voltage
VCEO
2.3
V
Emitter to Base Voltage
VEBO
1.2
V
IC
35
mA
80
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Symbol
Value
Unit
Rth (j-c)
150
°C/W
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10212EJ01V0DS (1st edition)
(Previous No. P15415EJ1V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
 NEC Compound Semiconductor Devices 2001, 2003
2SC5761
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
200
nA
Emitter Cut-off Current
IEBO
VBE = 0.5 V, IC = 0 mA
−
−
200
nA
VCE = 2 V, IC = 5 mA
200
−
400
−
S21e2
VCE = 2 V, IC = 20 mA, f = 2 GHz
16.0
18.0
−
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
−
0.9
1.1
dB
Associated Gain
Ga
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
−
16.0
−
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
0.17
0.22
pF
VCE = 2 V, IC = 20 mA, f = 2 GHz
18.0
20.0
−
dB
hFE
DC Current Gain
Note 1
RF Characteristics
Insertion Power Gain
Reverse Transfer Capacitance
Cre
Note 2
Note 3
Maximum Stable Power Gain
MSG
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2 V, IC = 20 mA, f = 2 GHz
−
12.0
−
dBm
OIP3
VCE = 2 V, IC = 20 mA, f = 2 GHz
−
22.0
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
2
Rank
FB
Marking
T16
hFE Value
200 to 400
Data Sheet PU10212EJ01V0DS
2SC5761
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation Ptot (mW)
300
250
200
150
100
80
50
0
100
25
50
75
100
125
f = 1 MHz
0.3
0.2
0.1
2
4
6
8
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
VCE = 2 V
1
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.0
35
190 µ A
30
160 µ A
25
130 µ A
20
100 µ A
15
70 µ A
10
40 µ A
5
IB = 10 µ A
0
1
2
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
VCE = 1 V
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
3
Base to Emitter Voltage VBE (V)
1 000
100
10
0.1
10
Ambient Temperature TA (˚C)
10
0.0001
0.0
0.4
0
150
Collector Current IC (mA)
Collector Current IC (mA)
Mounted on Glass Epoxy Board
(1.08 cm2 × 1.0 mm (t) )
Reverse Transfer Capacitance Cre (pF)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
1
10
100
100
10
0.1
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Data Sheet PU10212EJ01V0DS
3
2SC5761
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
0
1
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
35
40
VCE = 1 V
f = 2 GHz
10
20
15
10
5
10
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 0.5 V
IC = 20 mA
25
MSG
MAG
20
15
|S21e|2
10
5
1
10
35
VCE = 2 V
IC = 20 mA
30
MSG
25
MAG
20
|S21e|2
15
10
5
1
35
VCE = 1 V
IC = 20 mA
30
MSG
25
MAG
20
15
|S21e|2
10
5
0
0.1
1
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency f (GHz)
10
Frequency f (GHz)
4
30
Collector Current IC (mA)
30
0
0.1
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
35
0
0.1
35
0
1
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
40
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Data Sheet PU10212EJ01V0DS
10
2SC5761
30
25
VCE = 2 V
f = 1 GHz
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
MSG
|S21e|2
20
15
10
5
0
1
10
30
25
20
15
VCE = 2 V
f = 2 GHz
MSG
|S21e|2
10
100
Collector Current IC (mA)
5
0
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
VCE = 2 V
f = 5 GHz
20
15
MAG
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Data Sheet PU10212EJ01V0DS
5
2SC5761
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
70
20
60
15
Pout
10
50
5
40
0
30
IC
–5
20
10
–10
–15
–20
–15
–10
–5
10
50
5
40
0
30
–5
–15
–20
0
0
70
60
10
50
Pout
5
40
0
30
–5
20
10
–10
IC
–15
–20
–15
–10
–5
0
0
Input Power Pin (dBm)
6
10
–15
–10
–5
Input Power Pin (dBm)
80
15
20
IC
–10
Collector Current IC (mA)
Output Power Pout (dBm)
20
60
Pout
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
VCE = 2 V, f = 3 GHz
Icq = 5 mA (RF OFF)
70
15
Input Power Pin (dBm)
25
80
VCE = 2 V, f = 2 GHz
Icq = 5 mA (RF OFF)
Data Sheet PU10212EJ01V0DS
0
0
Collector Current IC (mA)
80
Output Power Pout (dBm)
Output Power Pout (dBm)
20
VCE = 2 V, f = 1 GHz
Icq = 5 mA (RF OFF)
Collector Current IC (mA)
25
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
70
VCE = 2 V
Icq = 5 mA
f = 1 GHz
off set = 1 MHz
60
50
40
30
20
10
0
–5
0
5
10
15
20
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBc)
2SC5761
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
70
60
50
40
30
20
10
0
–5
Output Power (at 1 tone) Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
VCE = 2 V
Icq = 5 mA
f = 2 GHz
off set = 1 MHz
0
5
10
15
20
Output Power (at 1 tone) Pout (dBm)
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
70
VCE = 2 V
Icq = 5 mA
f = 3 GHz
off set = 1 MHz
60
50
40
30
20
10
0
–5
0
5
10
15
20
Output Power (at 1 tone) Pout (dBm)
Data Sheet PU10212EJ01V0DS
7
2SC5761
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
25
5
4
20
4
20
3
15
3
15
2
10
2
10
Ga
25
0
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
25
5
25
VCE = 2 V
f = 1.5 GHz
Ga
20
3
15
2
10
5
1
Ga
4
1
15
2
10
5
1
NF
0
100
10
0
1
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
25
5
25
20
4
Ga
3
15
2
10
5
1
NF
1
10
0
100
Noise Figure NF (dB)
VCE = 2 V
f = 2 GHz
Associated Gain Ga (dB)
VCE = 1 V
f = 2 GHz
Noise Figure NF (dB)
0
100
10
Collector Current IC (mA)
5
4
Ga
20
3
15
2
10
1
0
NF
1
Collector Current IC (mA)
8
20
3
NF
0
0
100
10
Collector Current IC (mA)
4
0
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
VCE = 1 V
f = 1.5 GHz
Associated Gain Ga (dB)
Noise Figure NF (dB)
0
100
10
5
Noise Figure NF (dB)
NF
10
Collector Current IC (mA)
Data Sheet PU10212EJ01V0DS
5
0
100
Associated Gain Ga (dB)
1
Noise Figure NF (dB)
0
5
1
VCE = 1 V
f = 1 GHz
Associated Gain Ga (dB)
NF
Associated Gain Ga (dB)
5
1
Associated Gain Ga (dB)
Noise Figure NF (dB)
Ga
2SC5761
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
25
5
25
Ga
3
15
2
10
1
15
2
10
1
0
100
10
3
0
1
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
25
5
25
20
4
Ga
3
15
2
10
1
5
NF
1
Noise Figure NF (dB)
VCE = 2 V
f = 3 GHz
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 1 V
f = 3 GHz
20
4
Ga
3
10
0
5
NF
1
0
100
10
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
25
5
25
20
4
3
15
Ga
10
2
1
NF
1
10
5
0
100
Noise Figure NF (dB)
VCE = 2 V
f = 4 GHz
Associated Gain Ga (dB)
VCE = 1 V
f = 4 GHz
Noise Figure NF (dB)
15
2
1
0
100
10
5
0
0
100
10
Collector Current IC (mA)
5
0
5
NF
Associated Gain Ga (dB)
1
Ga
20
4
3
15
Ga
10
2
1
0
NF
1
Collector Current IC (mA)
10
5
Associated Gain Ga (dB)
0
5
NF
20
4
Associated Gain Ga (dB)
20
4
Noise Figure NF (dB)
VCE = 2 V
f = 2.5 GHz
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 1 V
f = 2.5 GHz
0
100
Collector Current IC (mA)
Data Sheet PU10212EJ01V0DS
9
2SC5761
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
25
25
20
3
15
Ga
2
NF
1
0
10
1
10
5
0
100
4
20
3
15
Ga
2
10
NF
1
0
1
Collector Current IC (mA)
10
5
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
10
Data Sheet PU10212EJ01V0DS
Associated Gain Ga (dB)
4
Noise Figure NF (dB)
VCE = 2 V
f = 5 GHz
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 1 V
f = 5 GHz
2SC5761
EQUAL NF CIRCLE
VCE = 2 V
IC = 5 mA
f = 1 GHz
NFmin = 0.8 dB
Γopt
Unstable Area
1.0 dB
1.5
2.5
4.0
dB
3.5
dB
2.0 dB
dB
3.0 dB
dB
VCE = 2 V
IC = 5 mA
f = 2 GHz
NFmin = 0.85 dB
Γopt
1.0 dB
B
1.5 d
Unstable Area
2.0 dB
B
2.5 d
3.0 dB
4.0 dB
3.5 dB
Data Sheet PU10212EJ01V0DS
11
2SC5761
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
0.65
0.30
0.11+0.1
–0.05
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
Data Sheet PU10212EJ01V0DS
1.30
0.65
3
4
1
0.30+0.1
–0.05
0.59 ± 0.05
PIN CONNECTIONS
12
+0.1
–0.05
0.60
0.65
1.25
T16
2.0 ± 0.1
2
1.25 ± 0.1
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05 ± 0.1
2SC5761
• The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10212EJ01V0DS
13
2SC5761
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