Power Transistors 2SD2341 Silicon NPN triple diffusion planar type Unit: mm For power amplification • Low collector to emitter saturation voltage VCE(sat) • High collector to emitter voltage VCEO • Allowing automatic insertion possible with radial taping 16.0±1.0 ■ Absolute Maximum Ratings TC = 25°C Parameter 90˚ 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 0.65±0.1 Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 180 V Emitter to base voltage VEBO 6 V Peak collector current ICP 3 A Collector current IC 2 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 ■ Features 4.5±0.2 3.8±0.2 10.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions Min Typ Max Unit 50 µA 50 µA ICBO VCB = 200 V, IE = 0 Emitter cutoff current IEBO VEB = 4 V, IC = 0 Collector to base voltage VCBO IC = 500 µA, IE = 0 200 V Collector to emitter voltage VCEO IC = 5 mA, IB = 0 180 V Emitter to base voltage VEBO IE = 500 µA, IC = 0 6 V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency hFE1 * VCE = 10 V, IC = 150 mA 60 hFE2 VCE = 10 V, IC = 400 mA 50 VBE VCE = 10 V, IC = 400 mA 1 V VCE(sat) IC = 500 mA, IB = 50 mA 1 V 150 MHz fT Note) *: Rank classification 358 Rank R S hFE1 60 to 140 100 to 240 VCB = 10 V, IC = −100 mA, f = 200 MHz 240 Power Transistors 2SD2341 PC T a IC VCE IC VBE 1.2 1.2 2.0 TC=25˚C IB=7mA 1.0 1.2 0.8 0.4 0.8 5mA 4mA 0.6 3mA 0.4 2mA 0.2 0 20 40 60 80 100 120 140 160 0.4 0.2 8 12 16 20 24 0 Collector to emitter voltage VCE (V) IC/IB=10 VCE=10V 1000 TC=100˚C 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 300 TC=100˚C 25˚C 100 –25˚C 30 10 Collector current IC (A) 0.1 0.3 1 3 ICP 3 IC 1 t=1ms t=1s 0.3 t=5ms 0.1 0.03 0.01 1 3 10 30 100 300 120 80 40 0 –1 10 1000 Collector to emitter voltage VCE (V) –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) Rth(t) t Thermal resistance Rth(t) (˚C/W) 10 1.2 160 104 Non repetitive pulse TC=25˚C 30 1.0 VCB=10V f=200MHz TC=25˚C 200 Collector current IC (A) Area of safe operation (ASO) 100 0.8 3 1 0.01 0.03 1 0.6 fT I E Transition frequency fT (MHz) 3 0.3 0.4 240 3000 1 0.2 Base to emitter voltage VBE (V) hFE IC 10000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 0.6 0 4 VCE(sat) IC 10 –25˚C 0.8 1mA 0 Ambient temperature Ta (˚C) Collector current IC (A) TC=100˚C 0 0 25˚C 1.0 6mA Collector current IC (A) 1.6 Collector current IC (A) Collector power dissipation PC (W) Without heat sink Without heat sink 103 102 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 359 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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