DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS (Unit: mm) The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB +0.2 Small Package: 4 Pins Mini Mold Package. (SC-61) (1.9) Automatically Mounting: Embossed Type Taping · 0.95 Suitable for use as RF amplifier in CATV tuner. · 0.6 +0.1 –0.05 1 (1.8) · 2 GPS = 19.5 dB TYP. (@ = 470 MHz) +0.2 1.5 –0.1 0.85 Enhancement Typ. 2.9±0.2 High Power Gain · 0.4 +0.1 –0.05 NF2 = 0.9 dB TYP. (@ = 55 MHz) · 2.8 –0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) V V 1 Gate1 to Source Voltage VG1S ±8(±10)* Gate2 to Source Voltage VG2S ±8(±10)* V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 200 mW Channel Temperature Tch 125 Storage Temperature Tstg -55 to +125 °C °C RL ³ 10 kW 5° 0.16+0.1 –0.06 1 0 to 0.1 18 5° 0.8 VDSX 1.1 +0.2 –3.1 Drain to Source Voltage 5° 0.4 +0.1 –0.05 NF1 = 2.2 dB TYP. (@ = 470 MHz) 3 Low Noise Figure 0.4 +0.1 –0.05 · 4 · 5° PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltages or fields. Document No. P10587EJ3V0DS00 (3rd edition) Date Published November 1996 N Printed in Japan © 1993 3SK230 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. BVDSX 18 IDSX 0.01 8.0 mA Gate1 to Source Cutoff Voltage VG1S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10 mA Gate2 to Source Cutoff Voltage VG2S(off) +0.6 +1.6 V VDS = 6 V, VG1S = 3 V, ID = 10 mA Drain to Source Breakdown Voltage Drain Current MAX. UNIT V +1.1 TEST CONDITIONS VG1S = VG2S = -2 V, ID = 10 mA VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V Gate1 Reverse Current IG1SS ±20 nA VDS = VG2S = 0, VG1S = ±8 V Gate2 Reverse Current IG2SS ±20 nA VDS = VG1S = 0, VG2S = ±8 V Forward Transfer Admittance | yfs | 16 20 24 mS VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 1 kHz Input Capacitance Ciss 2.3 2.8 3.3 pF Output Capacitance Coss 0.9 1.2 1.5 pF Reverse Transfer Capacitance Crss 0.015 0.03 pF Power Gain Gps 19.5 22.5 dB Noise Figure 1 NF1 2.2 3.2 dB Noise Figure 2 NF2 0.9 2.4 dB IDSX Classification 2 TYP. Rank U1A U1B Marking U1A U1B IDSX (mA) 0.01 to 3.0 1.0 to 8.0 16.5 VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 1 MHz VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 470 MHz VDS = 6 V, VG2S = 4.5 V, ID = 10 mA f = 55 MHz 3SK230 CHARACTERISTIC CURVE (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VG2S = 4.5 V ID - Drain Current - mA PT - Total Power Dissipation - mW Free Air 400 300 200 40 30 VG1S = 3 V 2.5 V 2.0 V 20 1.5 V 10 0 1.0 V 0.5 V 10 5 100 VDS - Drain to Source Voltage - V 0 25 50 75 100 125 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE VDS = 6 V VG2S 20 V 3.0 V 15 2.5 V 10 2.0 V 5 1.5 V 0 –1 |yfs| - Forward Transfer Admittance - mS = 3.5 40 0 1 2 3 4 VDS = 6 V f = 1 kHz 25 VG2S = 5 V 20 15 4V 10 3V 5 2V 0 –1 0 1 2 3 VGIS - Gate1 to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5.0 VDS = 6 V f = 1 kHz 32 VG2S = 6 V 24 5V 16 4V 8 2V 0 FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VGIS - Gate 1 to Source Voltage - V 4 3V 8 12 ID - Drain Current - mA 16 20 Ciss - Input Capacitance - pF ID - Drain Current - mA 25 |yfs| - Forward Transfer Admittance - mS TA - Ambient Temperature - °C 4.0 4 ID = 10 mA (at VDS = 6 V VG2S = 4.5 V) f = 1 MHZ 3.0 2.0 1.0 0 1.0 2.0 3.0 4.0 5.0 VG2S - Gate2 to Source Voltage - V 3 3SK230 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE f = 470 MHz ID = 10 mA Gps 2.0 (at VDS = 6 V 1.5 1.0 5 GPS - Power Gain - dB 2.0 10 ID = 10 mA (at VDS = 6 V VG2S = 4.5 V) f = 1 MHZ NF - Noise Figure - dB Coss - Output Capacitance - pF 2.5 VG2S = 4.5 V) 1.0 0 –1.0 NF 0.5 –2.0 0 1.0 2.0 3.0 4.0 0 5.0 0 1.0 VG2S - Gate2 to Source Voltage - V 2.0 3.0 4.0 5.0 V G2S - Gate2 to Source Voltage - V S-PARAMETER VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, (Zo = 50 W) FREQUENCY 4 S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100 1.000 -14.7 2.160 160.5 0.008 12.8 0.942 -8.2 200 0.960 -24.5 1.953 148.3 0.003 81.1 0.947 -9.6 300 0.926 -34.3 1.868 135.8 0.005 -146.8 0.906 -16.4 400 0.876 -45.0 1.760 121.2 0.003 -59.5 0.908 -19.4 500 0.853 -54.4 1.691 109.4 0.003 84.3 0.915 -25.1 600 0.842 -63.1 1.608 97.6 0.004 -87.0 0.889 -29.0 3SK230 GPS AND NF TEST CIRCUIT AT f = 470 MHz VG2S 1 000 pF 22 kΩ 1 000 pF Ferrite Beads 40 pF OUTPUT INPUT L2 40 pF 50 Ω L1 50 Ω 15 pF 15 pF 1 000 pF 1 000 pF 22 kΩ L3 1 000 pF 1 000 pF VDS VG1S L1: φ 1.2 mm U.E.W φ 5 mm IT L2: φ 1.2 mm U.E.W φ 5 mm IT L3: REC 2.2 µ H NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC 2.2 kΩ Ferrite Beads 1 500 pF 1 500 pF 1 000 pF 3.3 kΩ 50 Ω OUTPUT 27 pF INPUT 47 kΩ 27 pF 3.3 kΩ 47 kΩ 50 Ω 1 000 pF VG1S 5 3SK230 [MEMO] 6 3SK230 [MEMO] 7 3SK230 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5