GaAs IC SPDT Switch Non-Reflective DC–18 GHz AS018M2-00 0.648 ■ Broadband, DC–18 GHz ■ High Isolation, Low Loss, Fast Switching ■ 100% On-Wafer RF and DC Testing 1.520 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.839 2.240 Chip Outline 1.444 Features 1.375 Description 0.145 2.885 2.055 0.827 0.000 0.000 The AS018M2-00 GaAs SPDT matched MMIC FET switch chip is ideal for applications requiring low loss, high isolation and/or broadband operation. The GaAs MMIC employs three shunt and two series FETs per arm for low loss, high isolation switching together with a 50 Ω load which is switched into the high isolation arm for low return loss. Power consumption is very low, typically 75 µA at -5 V. While recommended for operation up to 18 GHz, the switch performs well through 22 GHz. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Electrical Specifications at 25°C 2, 10 and 18 GHz 2 GHz Typ. 10 GHz Typ. 18 GHz Typ. Insertion Loss2 1.5 2.8 2.2 Isolation 82 57 50 48 dB Input Return Loss 17 8.5 12.5 7 dB Output Return Loss 16 10.5 16 9 dB Parameter1 Min. Max. Unit 3.0 dB Operating Characteristics at 25°C Parameter1 Condition Switching Characteristics Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru3 Input Power for 1 dB Compression 0/-5 V Intermodulation Intercept Point (IP3) For Two-tone Input Power +13 dBm Control Voltages VLow = 0 to -0.2 V @ 20 µA Max. VHigh = -3 V to -6 V @ 250 µA Max. Frequency Min. Typ. Max. Unit 3 6 20 ns ns mV 0.5–18 GHz 0.001 GHz 24 16 dBm dBm 0.5–18 GHz 0.001 GHz 46 35 dBm dBm 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Insertion loss changes 0.003 dB/°C. 3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 7/00A 1 GaAs IC SPDT Switch Non-Reflective DC–18 GHz AS018M2-00 Typical Performance Data -2 -20 -3 -30 -4 -40 -5 -50 -6 -60 -7 -8 -9 -70 -80 -90 -10 -100 0 2 4 6 Input Return Loss (dB) -10 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 -25 -30 -30 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Frequency (GHz) Insertion Loss and Isolation vs. Frequency Return Loss vs. Frequency Truth Table V1 V2 0 -5 Absolute Maximum Ratings V3 V4 J1–J2 J1–J3 -5 0 -5 Low Loss Isolation RF Input Power (RF In) 0 -5 0 Isolation Low Loss Control Voltage (VC) Circuit Schematic V1 J1 Characteristic Value 1W +0.2 V, -7 V Operating Temperature (TOP) -55°C to +125°C Storage Temperature (TST) -65°C to +150°C Thermal Resistance (ΘJC) 83°C/W V4 Chip Layout J2 J3 50 Ω V1 J1 V4 50 Ω J2 V2 J3 V3 V2 2 V3 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 7/00A Output Return Loss (dB) 0 0 Isolation (dB) Insertion Loss (dB) 0 -1