DISCRETE SEMICONDUCTORS DATA SHEET BGY118A; BGY118B; BGY118D UHF amplifier modules Product specification Supersedes data of April 1994 File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D FEATURES PINNING SOT321A • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy output power control by DC voltage 2 VC • Very high efficiency (typ. 55 %) 3 VS 4 RF output • Silicon bipolar technology • Standby current less than 100 µA. Flange ground APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz, 872 to 905 MHz and 898 to 928 MHz frequency ranges respectively. DESCRIPTION The BGY118A, BGY118B and BGY118D are three-stage UHF amplifier modules in a SOT321A package. Each module consists of three NPN silicon planar transistor chips mounted together with matching and bias circuit components on a metallized ceramic substrate. 1 2 3 4 Top view MSA487 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE MODE OF OPERATION f (MHz) VS (V) PL (W) GP (dB) η (%) ZS, ZL (Ω) BGY118A CW 824 to 849 4.8 1.2 ≥27.8 typ. 55 50 BGY118B CW 872 to 905 4.8 1.2 ≥27.8 typ. 55 50 BGY118D CW 898 to 928 4.8 1.2 ≥27.8 typ. 55 50 1996 May 21 2 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VS DC supply voltage − 7 V VC DC control voltage − 3.5 V PD input drive power − 5 mW PL load power − 1.6 W Tstg storage temperature −40 +100 ∞C Tmb operating mounting base temperature −30 +100 ∞C CHARACTERISTICS ZS = ZL = 50 W; PD = 2 mW; VS = 4.8 V; VC ≤ 3 V; Tmb = 25 °C; unless otherwise specified. SYMBOL f PARAMETER CONDITIONS MIN. TYP. MAX. UNIT frequency BGY118A 824 − 849 MHz BGY118B 872 − 905 MHz BGY118D 898 − 928 MHz IQ total leakage current VC = 0; PD < −60 dBm − − 100 µA IC control current adjust VC for PL = 1.2 W − − 500 µA PL load power 1.2 − − W GP power gain adjust VC for PL = 1.2 W 27.8 - − dB η efficiency adjust VC for PL = 1.2 W 50 55 − % H2 second harmonic adjust VC for P = 1.2 W − − −40 dBc H3 third harmonic adjust VC for PL = 1.2 W − − −40 dBc VSWRin input VSWR adjust VC for PL = 1.2 W − − 3:1 stability PD = 0 to 6 dBm; VS = 4 to 6.5 V; VC = 0 to 3 V; PL ≤ 1.2 W; VSWR ≤ 6 : 1 through all phases − − −60 dBc Pn isolation VC = 0 − − −40 dBm noise power adjust VC for PL = 1.2 W; bandwidth = 30 kHz; note 1 − − −90 dBm ruggedness VS = 6.5 V; adjust VC for PL = 1.4 W; VSWR ≤ 10 : 1 through all phases Note 1. BGY118A, BGY118B: fn = fo + 45 MHz. BGY118D: fn = fo − 55 MHz. 1996 May 21 3 no degradation Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D MLB605 MLB604 80 2 handbook, halfpage handbook, halfpage η 824 MHz (%) P L (W) 60 849 MHz 824 MHz 849 MHz 40 1 20 0 0 0 1 2 3 0 4 0.4 0.8 1.2 1.6 ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.2 Load power as a function of control voltage; BGY118A; typical values. Fig.3 MLB606 2 2 P L (W) VC (V) Efficiency as a function of load power; BGY118A; typical values. MLB607 2 handbook, halfpage handbook, halfpage VS = 4.8 V 824 MHz PL PL (W) 849 MHz (W) VS = 4 V 1 1 0 0 800 820 840 860 f (MHz) 880 ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. Fig.4 0 40 80 120 Tmb ( oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. Load power as a function of frequency; BGY118A; typical values. 1996 May 21 40 Fig.5 4 Load power as a function of mounting-base temperature; BGY118A; typical values. Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D MLB608 4 handbook, halfpage VC (V) MLB609 40 3.0 handbook, halfpage VSWR in PL (dBm) 824 MHz 30 849 MHz 2.5 3 20 VC 2.0 2 VSWRin 10 1 1.5 0 0 800 820 840 860 f (MHz) −10 −30 1.0 880 −20 −10 0 10 PD (dBm) ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. Fig.6 Fig.7 Control voltage and VSWR input as function of frequency; BGY118A; typical values. MLB610 20 H 2 , H3 handbook, halfpage (dBc) 30 40 H3 50 H2 60 70 800 820 840 860 f (MHz) 880 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; Tmb = 25 °C. Fig.8 Harmonics as a function of frequency; BGY118A; typical values. 1996 May 21 5 Load power as a function of drive power; BGY118A; typical values. Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D MLB611 MLB612 2 80 handbook, halfpage handbook, halfpage η (%) 905 MHz P L (mW) 60 905 MHz 872 MHz 872 MHz 40 1 20 0 0 0 1 2 3 4 0 0.4 0.8 1.2 VC (V) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.9 ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Load power as a function of control voltage; BGY118B; typical values. Fig.10 Efficiency as a function of load power; BGY118B; typical values. MLB613 2 1.6 2 P L (mW) MLB614 2 handbook, halfpage handbook, halfpage 905 MHz PL (W) PL (W) 1 1 0 850 0 870 890 910 f (MHz) 930 ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. 40 0 40 80 120 Tmb ( oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. Fig.11 Load power as a function of frequency; BGY118B; typical values. 1996 May 21 872 MHz Fig.12 Load power as a function of mounting-base temperature; BGY118B; typical values. 6 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D MLB615 4 handbook, halfpage VC (V) MLB616 40 3.0 handbook, halfpage PL (dBm) VSWR in 30 2.5 3 20 VC 905 MHz 2.0 2 10 VSWR in 872 MHz 1 0 850 1.5 890 870 910 f (MHz) 0 −10 −30 1.0 930 −20 −10 0 10 PD (dBm) ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. Fig.13 Control voltage and VSWR input as function of frequency; BGY118B; typical values. Fig.14 Load power as a function of drive power; BGY118B; typical values. MLB617 20 H 2 , H3 handbook, halfpage (dBc) 30 40 H3 50 H2 60 70 850 870 890 910 f (MHz) 930 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; Tmb = 25 °C. Fig.15 Harmonics as a function of frequency; BGY118; typical values. 1996 May 21 7 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D MGD420 MGD421 2 80 handbook, halfpage handbook, halfpage η (%) PL (W) 60 898 MHz 898 MHz 928 MHz 928 MHz 1 40 20 0 0 1 2 3 0 4 Vc (V) 0 0.8 1.2 1.6 2 PL (W) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS 4.8 V; Tmb = 25 °C. Fig.16 Load power as a function of control voltage; BGY118D; typical values. Fig.17 Efficiency as a function of load power; BGY118D; typical values. MGD422 2 0.4 MGD423 2 handbook, halfpage handbook, halfpage PL (W) PL (W) VS = 4.8 V 898 MHz 928 MHz 4V 1 0 870 890 1 910 930 0 950 ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. 0 40 80 120 ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. Fig.18 Load power as a function of frequency; BGY118D; typical values. 1996 May 21 40 Tmb (oC) f (MHz) Fig.19 Load power as a function of mounting-base temperature; BGY118D; typical values. 8 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D MGD417 4 handbook, halfpage Vc (V) MGD418 40 3.0 handbook, halfpage PL (dBm) VSWRin 30 2.5 3 898 MHz 928 MHz 20 Vc 2.0 2 10 VSWR 1 1.5 0 870 890 910 0 −10 −30 1.0 950 930 f (MHz) −20 −10 0 10 PD (dBm) ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. Fig.20 Control voltage and VSWR input as function of frequency; BGY118D; typical values. Fig.21 Load power as a function of drive power; BGY118D; typical values. MGD419 −20 handbook, halfpage H2, H3 (dBc) −30 −40 H2 −50 −60 870 H3 890 910 930 f (MHz) 950 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; Tmb = 25 °C. Fig.22 Harmonics as a function of frequency; BGY118D; typical values. 1996 May 21 9 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D handbook, full pagewidth pin numbers 1 2 3 L2 L1 Z1 C1 C4 C3 C5 Z2 C2 RF input 4 C6 VC MSA914 VS RF output Fig.23 Test circuit. 90 handbook, full pagewidth 1 2 3 4 50 Ω input 50 Ω output VC VS Dimensions in mm. Fig.24 Printed-circuit board layout. 1996 May 21 10 MSA915 60 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D List of components (See Fig.23) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C4 multilayer ceramic chip capacitor 100 nF C2, C5 tantalum capacitor 2.2 µF; 35 V C3, C6 multilayer ceramic chip capacitor 33 pF 2222 851 13339 3122 108 20153 L1, L2 Ferroxcube coil 5 µH Z1, Z2 stripline; note 1 50 Ω 2222 852 47104 Note 1. The striplines are on a double copper-clad PCB with PTFE fibre-glass dielectric (er = 2.2); thickness 1/32 inch. 1996 May 21 11 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D SOLDERING The indicated temperatures are those at the solder interfaces. MLB740 300 handbook, halfpage Advised solder types are types with a liquidus less than or equal to 210 °C. T mb ( oC) Solder dots or solder prints must be large enough to wet the contact areas. 200 Footprints for soldering should cover the module contact area +0.1 mm on all sides. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. 100 Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. 0 0 100 200 300 t (s) 400 The maximum temperature profile and soldering time is indicated as follows (see Fig.25): t = 350 s at 100 °C Fig.25 Maximum allowable temperature profile. t = 300 s at 125 °C t = 200 s at 150 °C t = 100 s at 175 °C t = 50 s at 200 °C t = 5 s at 250 °C (maximum temperature). Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Triclean B/S • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1996 May 21 12 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D PACKAGE OUTLINE 25.0 24.6 handbook, full pagewidth 1.65 1.25 22.1 21.7 4.0 3.6 4.3 3.9 3.1 (4×) 2.9 13.4 13.0 5.1 4.9 2.4 2.2 1 2 3 0.55 (4×) 0.45 3.7 3.3 5.08 7.62 5.08 Dimensions in mm. Fig.26 SOT321A. 1996 May 21 13 MSA352 1.2 min 4 0.25 M (4×) 0.1 0.30 0.20 Philips Semiconductors Product specification UHF amplifier modules BGY118A; BGY118B; BGY118D DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 21 14