ETC C52

5 Micron CMOS Process Family
Process parameters
Features
• Double Poly / Single Metal
5µm
12 volts
Units
Metal I pitch (width/space)
5/5
µm
Poly pitch (width/space)
5/5
µm
Contact
5x5
µm
Via
5x5
µm
5
µm
P-well junction depth
6.3
µm
N+ junction depth
2.0
µm
P+ junction depth
1.4
µm
Gate oxide thickness
800
Å
Inter poly oxide thick.
700
Å
Gate geometry
• 10 µm Poly and Metal I Pitch
Description
The 5µm process is a double poly/double metal CMOS process with
an operating voltage range from 5 to 12 volts.
(13 Volts Maximum Operating Voltage.)
MOSFET Electrical Parameters
Resistances (Ω /sq.)
5 MICRON - 12 volts
Units
N Channel
min. typ. max.
Vt (50x5µm)
0.40
0.65
0.90
min.
0.40
Conditions
P Channel
typ. max.
0.65
0.90
min.
V
saturation
Vds=Vgs=3v
Ids (50x5µm)
20
6
µA/µm
Body Factor (50x50µm)
1.2
0.5
√v
Bvdss
18
24
18
24
V
Ids=1 µA
Field Threshold
18
>30
18
25
V
Ids = 14µA
2.8
µm
L drawn = 5µm
L Effective
1.8
Pwell
typ.
max.
2700
Pfield in Pwell
1000
2000
3000
N+
6
10
14
P+
70
90
110
Poly gate
14
20
26
Poly capacitor
30
55
80
Metal I
0.032
Capacitances (fF/µm2)
min.
typ.
max.
Inter-poly
0.35
0.50
0.65
Gate oxide
0.41
0.43
0.46
N+ Junction
0.34
P+ Junction
0.14
www.dalsasemi.com
Bipolar gain
min.
NPN vertical
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
typ.
275
Tel :
Fax
email:
max.
Condition
Vce = 5
Volts
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
dalsasales@dalsasemi.com