5 Micron CMOS Process Family Process parameters Features • Double Poly / Single Metal 5µm 12 volts Units Metal I pitch (width/space) 5/5 µm Poly pitch (width/space) 5/5 µm Contact 5x5 µm Via 5x5 µm 5 µm P-well junction depth 6.3 µm N+ junction depth 2.0 µm P+ junction depth 1.4 µm Gate oxide thickness 800 Å Inter poly oxide thick. 700 Å Gate geometry • 10 µm Poly and Metal I Pitch Description The 5µm process is a double poly/double metal CMOS process with an operating voltage range from 5 to 12 volts. (13 Volts Maximum Operating Voltage.) MOSFET Electrical Parameters Resistances (Ω /sq.) 5 MICRON - 12 volts Units N Channel min. typ. max. Vt (50x5µm) 0.40 0.65 0.90 min. 0.40 Conditions P Channel typ. max. 0.65 0.90 min. V saturation Vds=Vgs=3v Ids (50x5µm) 20 6 µA/µm Body Factor (50x50µm) 1.2 0.5 √v Bvdss 18 24 18 24 V Ids=1 µA Field Threshold 18 >30 18 25 V Ids = 14µA 2.8 µm L drawn = 5µm L Effective 1.8 Pwell typ. max. 2700 Pfield in Pwell 1000 2000 3000 N+ 6 10 14 P+ 70 90 110 Poly gate 14 20 26 Poly capacitor 30 55 80 Metal I 0.032 Capacitances (fF/µm2) min. typ. max. Inter-poly 0.35 0.50 0.65 Gate oxide 0.41 0.43 0.46 N+ Junction 0.34 P+ Junction 0.14 www.dalsasemi.com Bipolar gain min. NPN vertical For More Information: DALSA Semiconductor Sales 18 Boulevard de l’Aéroport Bromont, Québec, Canada J2L 1S7 typ. 275 Tel : Fax email: max. Condition Vce = 5 Volts (450) 534-2321 ext. 1448 (800) 718-9701 (450) 534-3201 [email protected]