ETC CR03AM-8

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
CR03AM
Dimensions
in mm
φ5.0 MAX
VOLTAGE
CLASS
TYPE
NAME
2
12.5 MIN
1
1 CATHODE
2 ANODE
3 GATE
CIRCUMSCRIBE
CIRCLE
φ0.7
1.3
1.25 1.25
3 2 1
• IT (AV) ........................................................................ 0.3A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
3.9 MAX
3
5.0 MAX
4.4
JEDEC : TO-92
APPLICATION
Leakage protector, timer, gas ignitor
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
800
V
VR (DC)
DC reverse voltage
320
480
V
VDRM
Repetitive peak off-state voltage
✽1
400
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
500
800
V
VD (DC)
DC off-state voltage
✽1
320
480
V
Ratings
Unit
0.47
A
0.3
A
20
A
1.6
A2s
Peak gate power dissipation
0.5
W
Average gate power dissipation
0.1
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
6
V
IFGM
Peak gate forward current
0.3
Tj
Junction temperature
Symbol
Conditions
Parameter
IT (RMS)
RMS on-state current
IT (AV)
Average on-state current
Commercial frequency, sine half wave, 180° conduction, Ta=47°C
ITSM
Surge on-state current
60Hz sine half wave 1 full cycle, peak value, non-repetitive
I2t
I2t
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
PG (AV)
VFGM
for fusing
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +110
°C
–40 ~ +125
°C
0.23
g
✽1. With gate to cathode resistance RGK=1kΩ.
Sep.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Limits
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=110°C, V RRM applied
—
—
0.1
mA
IDRM
Repetitive peak off-state current
Tj=110°C, V DRM applied, RGK=1kΩ
—
—
0.1
mA
VTM
On-state voltage
Ta=25°C, I TM=4A, instantaneous value
—
—
1.8
V
VGT
Gate trigger voltage
Tj=25°C, VD =6V, IT=0.1A ✽3
—
—
0.8
V
VGD
Gate non-trigger voltage
Tj=110°C, VD =1/2VDRM, RGK=1kΩ
0.2
—
—
IGT
Gate trigger current
Tj=25°C, VD =6V, IT=0.1A ✽3
1
—
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
—
1.5
3
R th (j-a)
Thermal resistance
Junction to ambient
—
—
180
100 ✽2
V
µA
mA
°C/ W
✽2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
✽3. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
V1
RGK
1 2
VGT
1kΩ
SWITCH
60Ω
TUT
6V
DC
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
MAXIMUM ON-STATE CHARACTERISTICS
101
7
Ta = 25°C
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
20
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
18
16
14
12
10
8
6
4
2
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Sep.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
GATE VOLTAGE (V)
7
5
3
2
PGM = 0.5W
VFGM = 6V
101
7
5
3
2
PG(AV) = 0.1W
VGT = 0.8V
(Tj = 25°C)
IGT = 100µA
(Tj = 25°C)
100
7
5
3
2
10–1
7
5
3
2
IFGM = 0.3A
VGD = 0.2V
10–2
5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5
GATE TRIGGER CURRENT (Tj=t°C)
GATE TRIGGER CURRENT (Tj=25°C)
102
100 (%)
GATE CHARACTERISTICS
103
7
5
3
2
TYPICAL EXAMPLE
102
7
5
3
2
101
7
5
3
2
100
–40 –20
GATE CURRENT (mA)
DISTRIBUTION
0.7
TYPICAL EXAMPLE
IGT (25°C) = 35µA
0.6
0.5
0.4
0.3
0.2
0.1
AVERAGE POWER DISSIPATION (W)
0
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
0.8
40
60
80 100 120
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
180
160
140
120
100
80
60
40
20
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
JUNCTION TEMPERATURE (°C)
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
0.5
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
0.4
θ = 30°
180°
120°
90°
60°
0.3
0.2
θ
360°
0.1
0
0
0.1
0.2
RESISTIVE,
INDUCTIVE
LOADS
0.4
0.5
0.3
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
GATE TRIGGER VOLTAGE (V)
0.9
20
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
0
140
θ
120
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
100
80
60
40
θ = 30° 90° 180°
60° 120°
20
0
0
0.1
0.2
0.3
0.4
0.5
AVERAGE ON-STATE CURRENT (A)
Sep.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
120°
0.5
90°
60°
θ = 30°
180°
0.4
0.3
0.2
θ
0.1
θ
360°
0
0
0.1
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
AMBIENT TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
RESISTIVE LOADS
0.2
0.3
0.4
0.5
140
θ
120
360°
80
60
40
θ
360°
0.1
120
0.1
0.2
0.1
0.2
0.3
0.4
0.5
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
NATURAL
CONVECTION
140
θ
360°
120
θ = 30°
60°
100
80
60
40
RESISTIVE,
INDUCTIVE
90° LOADS
120°
180°
270°
DC
20
0
0
0.1
0.2
0.3
0.4
0.5
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
TYPICAL EXAMPLE
RGK = 1kΩ
140
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
JUNCTION TEMPERATURE (°C)
100 (%)
160
0
0
AVERAGE ON-STATE CURRENT (A)
160
BREAKOVER VOLTAGE (RGK = rk Ω)
BREAKOVER VOLTAGE (RGK = 1kΩ)
100 (%)
0
RESISTIVE,
INDUCTIVE
LOADS
0.3
0.4
0.5
θ = 30° 60° 90° 120° 180°
20
0
AMBIENT TEMPERATURE (°C)
0.2
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C)
AVERAGE POWER DISSIPATION (W)
0.3
RESISTIVE LOADS
NATURAL
CONVECTION
100
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.5
270°
180°
120°
90°
DC
0.4
60°
θ = 30°
θ
120
TYPICAL EXAMPLE
Tj = 110°C
140
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
Sep.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
200
RGK = 1kΩ
180
140
120
100
Tj = 25°C
80
60
40
Tj = 110°C
20
102
7
5
3
2
101
7
5
3
2
RGK = 1kΩ
DISTRIBUTION
TYPICAL EXAMPLE
IGT (25°C) = 35µA
100
7
5
3
2
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
# 1 10µA
1.0mA
# 2 26µA
1.1mA
400
300
#1
#2
200
100
VD = 12V, Tj = 25°C
0
10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
500
HOLDING CURRENT (mA)
HOLDING CURRENT (mA)
160
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C)
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100 (%)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
120
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT (µA)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7
5
4
3
2
TYPICAL EXAMPLE
IGT (DC)
# 1 16µA
# 2 65µA
#1
103
7
5
4
3
2
#2
Tj = 25°C
102
100
2 3 4 5 7 101
2 3 4 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
Sep.2000