ETC DG858BW

DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0
DS4096-4.0 January 2000
FEATURES
KEY PARAMETERS
3000A
ITCM
VDRM
4500V
IT(AV)
1180A
dVD/dt
1000V/µs
diT/dt
300A/µs
●
Double Side Cooling
●
High Reliability In Service
●
High Voltage Capability
●
Fault Protection Without Fuses
●
High Surge Current Capability
●
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
●
Variable speed A.C. motor drive inverters (VSD-AC)
●
Uninterruptable Power Supplies
●
High Voltage Converters
●
Choppers
●
Welding
●
Induction Heating
●
DC/DC Converters
Package outline type code: W.
See Package Details for further information.
Figure 1. Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
VDRM
V
Repetitive Peak Reverse
Voltage
VRRM
V
4500
16
DG858BW45
Conditions
Tvj = 125oC, IDM = 100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITCM
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF
3000
A
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled, half sine 50Hz
1180
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled, half sine 50Hz
1850
A
1/19
DG858BW45
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
LS
Parameter
Conditions
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
20.0
kA
I2t for fusing
10ms half sine. Tj =125oC
2.0 x 106
A 2s
Critical rate of rise of on-state current
VD = 3000V, IT = 3000A, Tj = 125oC,
IFG > 40A, Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
130
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
200
nH
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM,-T
- j = 125˚C, dI/GQ = 40A/
µs, Cs = 3.0µF
GATE RATINGS
Symbol
Parameter
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
Conditions
Min.
Max.
Units
This value maybe exceeded during turn-off
-
16
V
20
100
A
PFG(AV)
Average forward gate power
-
20
W
PRGM
Peak reverse gate power
-
24
kW
diGQ/dt
Rate of rise of reverse gate current
20
60
A/µs
tON(min)
Minimum permissable on time
50
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.011
o
C/W
Anode side cooled
-
0.017
o
C/W
Cathode side cooled
-
0.03
o
C/W
-
0.0021
o
C/W
THERMAL AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to
heatsink surface
Conditions
Clamping force 40.0kN
With mounting compound
per contact
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
-40
125
o
C
Operating junction/storage temperature range
-40
125
o
C
Clamping force
36.0
44.0
kN
TOP/Tstg
2/19
DG858BW45
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Conditions
Parameter
Symbol
Min.
Max.
Units
VTM
On-state voltage
At 4000A peak, IG(ON) = 10A d.c.
-
4.0
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.2
V
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
4.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 2000V
-
2700
mJ
td
Delay time
IT = 3000A, dIT/dt = 300A/µs
-
2.0
µs
tr
Rise time
IFG = 40A, rise time < 1.0µs
-
6.0
µs
Turn-off energy
-
13500
mJ
tgs
Storage time
-
25.0
µs
tgf
Fall time
IT = 3000A, VDM = VDRM
-
2.5
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 3.0µF,
-
27.5
µs
QGQ
Turn-off gate charge
diGQ/dt = 40A/µs
-
12000
µC
QGQT
Total turn-off gate charge
-
24000
µC
IGQM
Peak reverse gate current
-
950
A
IGT
EOFF
3/19
DG858BW45
2.5
12.5
2.0
10.0
1.5
7.5
1.0
5.0
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
VGT
2.5
0.5
IGT
0
-50
-25
75
0
25
50
100
Junction temperature Tj - (˚C)
125
0
150
Figure 2. Maximum gate trigger voltage/current vs junction temperature
Instantaneous on-state current IT - (A)
4000
Measured under pulse
conditions.
IG(ON) = 10A
Half sine wave 10ms
3000
Tj = 25˚C
Tj = 125˚C
2000
1000
0
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage VTM - (V)
Figure 3. On-state characteristics
4/19
4.0
DG858BW45
Maximum permissible turn-off
current ITCM - (A)
4000
Conditions:
T = 125˚C,
3500 Vj = V
DM
DRM
dIGQ/dt = 40A/µs
3000
2500
2000
1500
1000
0
1.0 2.0 3.0
4.0 5.0
Snubber capacitance Cs - (µF)
6.0
Figure 4. Maximum dependence of ITCM on Cs
dc
0.010
0.005
0
0.001
0.01
0.1
Time - (s)
10
1.0
100
Figure 5. Maximum (limit) transient thermal impedance - double side cooled
50
Peak half sine wave on-state current - (kA)
Thermal impedance - ˚C/W
0.015
40
30
20
10
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
Figure 6. Surge (non-repetitive) on-state current vs time
1.0
5/19
DG858BW45
5500
5000
dc
Conditions;
IG(ON) = 10A
Mean on-state power dissipation - (W)
4500
180˚
4000
120˚
3500
3000
60˚
2500
30˚
2000
1500
1000
500
0
0
500
1000
1500
Mean on-state current IT(AV) - (A)
60
70
80
90 100 110 120 130
Maximum permissible case temperature - (˚C)
Figure 7. Steady state rectangular wave conduction loss - double side cooled
Mean on-state power dissipation- (W)
4000
180˚
Conditions;
IG(ON) = 10A
3500
120˚
90˚
3000
60˚
2500
30˚
2000
1500
1000
500
0
0
200 400 600 800 1000 1200
Mean on-state current IT(AV) - (A)
80
90 100 110 120 130
Maximum permissible case temperature - (˚C)
Figure 8. Steady state sinusoidal wave conduction loss - double side cooled
6/19
DG858BW45
Conditions:
T = 25˚C
4000 j
IFGM = 40A
Cs = 3µF
3500 Rs = 10 Ohms
dIT/dt = 300A/µs
/dt = 40A/µs
dI
FG
3000
VD = 3000V
2500
VD = 2000V
2000
1500
VD = 1000V
1000
500
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Figure 9. Turn-on energy vs on-state current
8000
Conditions:
IT = 3000A, Tj = 25˚C,
Cs = 3.0µF, Rs = 10 Ohms
dIT/dt = 300A/µs,
dIFG/dt = 40A/µs
7000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
4500
6000
5000
4000
VD = 3000V
3000
2000
VD = 2000V
1000
VD = 1000V
0
0
10
20
30
40
50
60
70
Peak forward gate current IFGM- (A)
80
Figure 10. Turn-on energy vs peak forward gate current
7/19
DG858BW45
Turn-on energy loss EON - (mJ)
4500
VD = 3000V
Conditions:
Tj = 125˚C
4000
IFGM = 40A
Cs = 3.0µF
3500 Rs = 10 Ohms
dIT/dt = 300A/µs
3000 dIFG/dt = 40A/µs
VD = 2000V
2500
2000
1500
VD = 1000V
1000
500
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Figure 11. Turn-on energy vs on-state current
10000
8000
7000
Turn-on energy loss EON - (mJ)
9000
Turn-on energy loss EON - (mJ)
5000
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 3.0µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
6000
5000
4000
VD = 2250V
3000
3000
1500
VD = 1000V
1000
1000
VD = 1000V
500
10
20
30
40
50
60
70
Peak forward gate current IFGM - (A)
Figure 12. Turn-on energy vs peak forward gate current
80
VD = 2000V
2000
VD = 2000V
0
VD = 3000V
2500
2000
0
8/19
Conditions:
I = 3000A
4500 T
Tj = 125˚C
Cs = 3.0µF
4000 Rs = 10 Ohms
IFGM = 40A
dI
3500
FG/dt = 40A/µs
0
50 100 150 200 250 300 350
Rate of rise of on-state current dIT/dt - (A/µs)
Figure 13. Turn-on energy vs rate of rise of
on-state current
7.0
6.0
tr
5.0
Conditions:
Tj = 125˚C, IFGM = 40A
Cs = 3.0µF, Rs = 10 Ohms,
dIT/dt = 300A/µs, VD = 2000V
4.0
3.0
td
2.0
1.0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.ure 14. Delay and rise time vs on-state current
12.0
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 3.0µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
VD = 2000V
11.0
10.0
Turn-on delay time and rise time - (µs)
Turn-on delay time and rise time - (µs)
DG858BW45
9.0
8.0
7.0
6.0
5.0
tr
4.0
3.0
2.0
td
1.0
0
10
20
30
40
50
60
70
Peak forward gate current IFGM - (A)
80
Figure 15. Delay and rise time vs peak forward gate current
9/19
DG858BW45
Turn-off energy loss EOFF - (mJ)
9000
Conditions:
T = 25˚C
8000 Cjs = 3.0µF
dIGQ/dt = 40A/µs
7000
A
B
6000
C
5000
4000
3000
2000
A: VDM = 100% VDRM
B: VDM = 75% VDRM
C: VDM = 50% VDRM
1000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
Figure 16. Turn-off energy loss vs on-state current
9000
Turn-off energy per pulse EOFF - (mJ)
Conditions:
I = 3000A
8500 T
Tj = 25˚C
Cs = 3.0µF
8000
7500
VDM = 100% VDRM
VDM = 75% VDRM
7000
6500
6000
VDM = 50% VDRM
5500
5000
4500
4000
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Figure 17. Turn-off energy vs rate of rise of reverse gate current
10/19
3000
DG858BW45
14000
A
B
8000
C
6000
4000
A: VDM = 100% VDRM
B: VDM = 75% VDRM
C: VDM = 50% VDRM
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Figure 18. Turn-off energy vs on-state current
14000
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
Conditions:
T = 125˚C
12000 Cjs = 3.0µF
dIGQ/dt = 40A/µs
10000
13000
VDM = 100% VDRM
12000
11000
VDM = 75% VDRM
10000
9000
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 3.0µF
8000
7000
VDM = 50% VDRM
6000
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Figure 19. Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG858BW45
Turn-off energy per pulse EOFF - (mJ)
16000
Conditions:
T = 125˚C
14000 j
VDM = VDRM
dIGQ/dt = 40A/µs
12000
Cs = 3.0µF
Cs = 4.0µF
Cs = 2.5µF
Cs = 2.0µF
10000
8000
6000
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Figure 20. Turn-off energy vs on-state current
25.0
Conditions:
Cs = 3.0µF
22.5 dI /dt = 40A/µs
GQ
Tj = 125˚C
Tj = 25˚C
Gate storage time tgs - (µs)
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
500
1000
1500
2000
On-state current IT - (A)
2500
Figure 21. Gate storage time vs on-state current
12/19
3000
3500
DG858BW45
40.0
Conditions:
IT = 3000A
Cs = 3.0µF
Gate storage time tgs - (µs)
35.0
30.0
25.0
Tj = 125˚C
20.0
Tj = 25˚C
15.0
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Figure 22. Gate storage time vs rate of rise of reverse gate current
Gate fall time tgf - (µs)
3.0
Conditions:
Cs = 3.0µF
dIGQ/dt = 40A/µs
Tj = 125˚C
2.0
Tj = 25˚C
1.0
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Figure 23. Gate fall time vs on-state current
13/19
DG858BW45
3.0
Conditions:
IT = 3000A
Cs = 3.0µF
Gate fall time tgf - (µs)
2.5
Tj = 125˚C
2.0
Tj = 25˚C
1.5
1.0
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Figure 24. Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
1000
Conditions:
C = 3.0µF
900 s
dIGQ/dt = 40A/µs
Tj = 125˚C
800
Tj = 25˚C
700
600
500
400
300
200
0
500
1000
1500
2000
On-state current IT - (A)
2500
Figure 25. Peak reverse gate current vs on-state current
14/19
3000
DG858BW45
1000
Peak reverse gate current IGQM - (A)
Conditions:
IT = 3000A
CS = 3.0µF
Tj = 125˚C
900
Tj = 25˚C
800
700
600
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Figure 26. Reverse gate current vs rate of rise of reverse gate current
Total turn-off gate charge QGQ - (µC)
12000
Conditions:
C = 3.0µF
10000 dIS /dt = 40A/µs
GQ
Tj = 125˚C
8000
Tj = 25˚C
6000
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Figure 27. Turn-off gate charge vs on-state current
15/19
DG858BW45
15000
Conditions:
IT = 3000A
CS = 3.0µF
Turn-off gate charge QGQ - (µC)
14000
13000
12000
Tj = 125˚C
11000
10000
9000
Tj = 25˚C
8000
7000
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Rate of rise of off-state voltage dV/dt
- (V/µs)
Figure 28. Turn-off gate charge vs rate of rise of reverse gate current
1000
500
0
0.1
Tj = 125˚C
VD = 2250V
VD = 3000V
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Figure 29. Rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG858BW45
0.9VD
0.9IT
dVD/dt
VD
VD
IT
td
ITAIL
VDP
0.1VD
VDM
tgs
tr
tgf
tgt
tgq
dIFG/dt
Gate voltage and current
IFG
VFG
IG(ON)
0.1IFG
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 3000A
IFG = 40A
IG(ON) = 10A d.c.
tw1(min) = 20µs
IGQM = 950A
diGQ/dt = 40A/µs
QGQ = 12000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Figure 30. General switching waveforms
17/19
DG858BW45
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (One in each electrode)
12˚
Auxiliary cathode connector Ø3.0
Gate connector Ø3.0
Anode
27.0
25.5
Ø120 max
Ø84.6 nom
Ø84.6 nom
72 max
Cathode
Nominal weight: 1700g
Clamping force: 40kN ±10%
Lead length: 600mm
Package outine type code: W
18/19
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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