Ordering number : ENN7217 FW352 N-Channel and P-Channel Silicon MOSFET FW352 Ultrahigh-Speed Switching Applications • [FW352] 5 0.3 8 1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 4 5.0 Specifications 0.595 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage 1.27 0.43 6.0 • unit : mm 2129 4.4 • Low ON-resistance. Ultrahigh-speed switching. Dual chip device with both a p-channel and an nchannel MOSFETs encapsulated in one package for high-density mounting. High-density mounting. Excellent ON-resistance characteristic. 0.2 1.8max • Package Dimensions 1.5 • 0.1 Features Ratings Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) P-channel Unit 60 --60 V ±20 ±20 V 4 --2.4 A 48 --32 PW≤10µs, duty cycle≤1% Allowable Power Dissipation ID IDP PD Total Dissipation PT Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) Mounted on a ceramic board (1200mm 2✕0.8mm)1unit A 1.7 W Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=4A 1.0 5 Marking : W352 V 10 µA ±10 µA 2.4 7 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72602 TS IM TA-100006 No.7217-1/6 FW352 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=4A, VGS=10V ID=2A, VGS=4V 70 90 mΩ 90 125 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 350 Output Capacitance Coss VDS=20V, f=1MHz 110 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 40 ns See specified Test Circuit. 40 ns Turn-OFF Delay Time Fall Time Conditions min typ max Unit pF tf Qg See specified Test Circuit. 55 ns VDS=10V, VGS=10V, ID=4A 12 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 2 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 3 Diode Forward Voltage VSD IS=4A, VGS=0 Total Gate Charge nC 0.81 1.2 V --10 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=--1mA, VGS=0 VDS=--60V, VGS=0 --60 IGSS VGS(off) VGS=±16V, VDS=0 VDS=--10V, ID=--1mA --1.0 yfs RDS(on)1 VDS=--10V, ID=--2.4A 3.2 V ±10 µA --2.4 V 4.6 S 165 215 mΩ RDS(on)2 Ciss ID=--2.4A, VGS=--10V ID=--1.2A, VGS=--4V 230 320 mΩ VDS=--20V, f=1MHz 440 Output Capacitance Coss VDS=--20V, f=1MHz 110 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 33 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 24 ns See specified Test Circuit. 50 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time pF tf Qg See specified Test Circuit. 40 ns VDS=--10V, VGS=--10V, ID=--2.4A 14 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2.4A 2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2.4A 3.7 nC Diode Forward Voltage VSD IS=--2.4A, VGS=0 Total Gate Charge --0.81 --1.2 V Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 (Top view) Switching Time Test Circuit [N-channel] [P-channel] VDD=30V VIN VDD= --30V VIN 10V 0V 0V --10V ID=4A RL=7.5Ω VIN D ID= --2.4A RL=12.5Ω VIN D VOUT VOUT PW=10µs D.C.≤1% PW=10µs D.C.≤1% G G FW352 P.G 50Ω S FW352 P.G 50Ω S No.7217-2/6 FW352 ID -- VDS V 5.0 ID -- VGS 8 [Nch] VDS=10V 5V 7 6.0 7 [Nch] 3. 4.0 V V 8 10.0 V 3.0V 3 2 5 4 3 2 VGS=2.5V 1 0 0 Ta=7 5°C --25° C 25°C 5 4 6 Drain Current, ID -- A V 8.0 Drain Current, ID -- A 6 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Source Voltage, VGS -- V IT04521 RDS(on) -- VGS 200 0 2.0 [Nch] RDS(on) -- Ta 180 5.0 IT04522 [Nch] 140 120 4A 100 80 60 40 20 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 3 2 5° 3 2 25 = Ta °C --2 C °C 75 0.1 7 5 20 --40 --20 0 20 40 60 80 100 120 140 IT04524 IF -- VSD [Nch] VGS=0 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.01 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 3 5 7 0 10 IT04525 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V [Nch] 1.2 IT04526 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=10V 2 [Nch] f=1MHz 7 5 Ciss 100 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 40 3 2 3 2 0.001 60 10 7 5 VDS=10V 1.0 7 5 80 Ambient Temperature, Ta -- °C Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 20 [Nch] 10 7 5 =4V V GS 10V S= VG , 4A I D= 2A, I D= 100 IT04523 yfs -- ID 2 120 0 --60 0 0 140 Ta=75 °C ID=2A 160 --25°C 160 25°C 180 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 7 td (off) 5 tf 3 2 tr 10 2 Coss 100 7 5 Crss 3 td(on) 7 3 2 5 3 0.1 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT04527 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 60 IT04528 No.7217-3/6 FW352 VGS -- Qg 6 5 4 3 3 4 6 8 9 10 [Pch] --4 .0 --1 0 --2.0 --3.0V --1.5 Ta=25°C Single pulse Mounted on a ceramic board(1200mm2✕0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 ID -- VGS 5 7 100 IT04530 [Pch] VDS= --10V --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 VGS= --2.5V --0.5 25° --0.5 0 0 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Drain-to-Source Voltage, VDS -- V [Pch] 400 350 300 --2.4A ID= --1.2A 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate-to-Source Voltage, VGS -- V 10 7 5 [Pch] C = Ta 3 2 -- °C Forward Current, IF -- A ° 25 C 5° 2 75 0.1 7 5 3 2 --3.0 --3.5 --4.0 --4.5 --5.0 IT04532 [Pch] 4V 250 = -VGS 2A, 1. -I D= 200 0V --1 S= , VG 2.4A -I D= 150 100 50 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT04534 IF -- VSD [Pch] VGS=0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0.01 --0.001 300 --10 7 5 VDS= --10V 1.0 7 5 --2.5 350 0 --60 --20 3 2 --2.0 RDS(on) -- Ta IT04533 yfs -- ID --1.5 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 250 --0.5 IT04531 RDS(on) -- VGS 500 0 --2.0 --25°C --0.6 25°C --0.4 5°C --0.2 Ta= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ n --4.0 --1.0 Forward Transfer Admittance, yfs -- S tio --4.5 .0V --2.5 era Drain-to-Source Voltage, VDS -- V --3.5V --8 . --3.0 s op Operation in this area is limited by RDS(on). --5.0 0V --3.5 12 ID -- VDS --5 .0V --4.0 11 IT04529 --6 .0V --4.5 7 Total Gate Charge, Qg -- nC --5.0 Drain Current, ID -- A 5 Drain Current, ID -- A 2 0m V 1 ms DC 0.01 0.1 0 10 10 0.1 7 5 3 2 1 0 ID=4A 1.0 7 5 3 2 2 [Nch] ≤10µs 10 0µ s 1m s IDP=48A 10 7 5 3 2 Drain Current, ID -- A 8 7 ASO 100 7 5 3 2 °C C --25°C 9 Gate-to-Source Voltage, VGS -- V [Nch] VDS=10V ID=4A Ta= 75 10 2 3 5 7 2 3 --0.01 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT04535 --0.01 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Diode Forward Voltage, VSD -- V --1.0 --1.1 IT04536 No.7217-4/6 FW352 SW Time -- ID 3 2 VDD= --30V VGS= --10V 7 td(off) 5 tf 3 2 tr 10 7 td(on) 5 2 7 5 2 3 5 7 2 --1.0 3 5 VGS -- Qg 0 7 --10 IT04537 [Pch] Drain Current, ID -- A --6 --5 --4 --3 --2 --1 0 4 6 8 10 Total Gate Charge, Qg -- nC PD -- Ta 2.5 14 1.7 1.5 To ta ld iss ipa 1u tio nit 1.0 n 0.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C --10 7 5 3 2 140 160 IT04541 --40 --50 --60 IT04538 [Pch] ≤10µs 10 0µ s 1m s 10 ms ID= --2.4A 10 0m --1.0 7 5 3 2 DC s op era tio Operation in this area is limited by RDS(on). --0.1 7 5 3 2 n Ta=25°C Single pulse Mounted on a ceramic board(1200mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 IT04540 Drain-to-Source Voltage, VDS -- V [Nch, Pch] 2.0 --30 IDP= --32A IT04539 board(1200mm2✕0.8mm) Mounted on a ceramic Allowable Power Dissipation, PD -- W 12 Allowable Power Dissipation(FET 1), PD -- W 2 --20 ASO --100 7 5 3 2 --8 --7 --10 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --2.4A 0 Crss 10 2 --10 0 Coss 100 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 3 --9 Ciss 5 3 1.0 --0.1 [Pch] f=1MHz 1000 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 100 7 Ciss, Coss, Crss -- VDS [Pch] PD(FET 1) -- PD(FET 2) [Nch, Pch] 2.0 1.8 1.7 1.6 M ou nte do na 1.4 ce ram 1.2 ic bo ard 1.0 (1 20 0m 0.8 m2 ✕0 0.6 .8m m) 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation(FET 2), PD -- W 2.0 IT04542 No.7217-5/6 FW352 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.7217-6/6