HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. File Number 4261.1 Features • 24A, 600V at TC = 25oC • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. E C G COLLECTOR (FLANGE) Formerly Developmental Type TA49182. Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60C3D TO-220AB 12N60C3D HGT1S12N60C3DS TO-263AB 12N60C3D JEDEC TO-263AB COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DST. G E Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 24 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG) 12 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage TEST CONDITIONS Gate to Emitter Leakage Current Switching SOA MAX UNITS 600 - - V - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC - 1.65 2.0 V TC = 150oC - 1.85 2.2 V TC = 25oC - 1.80 2.2 V TC = 150oC - 2.0 2.4 V 3.0 5.0 6.0 V - - ±100 nA VCE(PK) = 480V 80 - - A VCE(PK) = 600V 24 - - A IC = IC110, VCE = 0.5 BVCES - 7.6 - V Qg(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 48 55 nC VGE = 20V - 62 71 nC td(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25Ω, - 28 - ns - 20 - ns - 270 400 ns - 210 275 ns VCE(SAT) VCE = BVCES IC = IC110, VGE = 15V IC = 15A, VGE = 15V Gate to Emitter Threshold Voltage TYP TC = 25oC ICES IC = 250µA, VGE = 0V MIN VGE(TH) IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VGEP tri td(OFF)I Current Fall Time tfi Turn-On Energy EON - 380 - µJ Turn-Off Energy (Note 3) EOFF - 900 - µJ Diode Forward Voltage VEC - 1.7 2.1 V ©2001 Fairchild Semiconductor Corporation L = 100µH IEC = 12A HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Diode Reverse Recovery Time TEST CONDITIONS trr Thermal Resistance RθJC MIN TYP MAX UNITS IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns IGBT - - 1.2 oC/W Diode - - 1.9 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. 80 DUTY CYCLE <0.5%, VCE = 10V 70 PULSE DURATION = 250µs 60 50 TC = 150oC 40 TC = 25oC 30 TC = -40oC 20 10 0 6 4 8 10 12 14 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC 80 VGE = 15.0V 60 50 10.0V 40 30 9.0V 20 8.5V 8.0V 10 7.0V 0 0 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 60 50 40 TC = -40oC 30 TC = 150oC 20 TC = 25oC 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2001 Fairchild Semiconductor Corporation 4 6 8 10 FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS 70 2 7.5V VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) 80 12.0V 70 80 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 70 TC = -40oC 60 TC = 25oC 50 40 TC = 150oC 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS VGE = 15V 20 15 10 5 0 25 50 75 100 125 150 140 20 VCE = 360V, RG = 25Ω, TJ = 125oC 120 ISC 100 15 80 10 60 5 10 11 TC , CASE TEMPERATURE (oC) 20 15 14 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 100 400 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V td(OFF)I , TURN OFF DELAY TIME (ns) td(ON)I , TURN ON DELAY TIME (ns) 13 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 50 VGE = 10V 30 20 VGE = 15V TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V 300 VGE = 15V VGE = 10V 200 100 10 5 10 15 20 25 30 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 20 25 30 FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 300 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V 100 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V VGE = 10V VGE = 15V 10 tfi , FALL TIME (ns) tri , TURN ON RISE TIME (ns) 40 tSC ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 25 (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves 200 VGE = 10V OR 15V 100 90 5 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 30 80 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS Typical Performance Curves (Continued) 3.0 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V EOFF, TURN OFF ENERGY LOSS (mJ) EON , TURN ON ENERGY LOSS (mJ) 2.0 1.5 VGE = 10V 1.0 VGE = 15V 0.5 0 5 10 15 20 25 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V 2.5 2.0 1.5 VGE = 10V or 15V 1.0 0.5 0 30 5 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 1.2oC/W 1 5 10 20 30 ICE, COLLECTOR TO EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) VGE = 10V 10 100 30 80 60 LIMITED BY CIRCUIT 40 20 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA 15 VGE, GATE TO EMITTER VOLTAGE (V) 2500 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) 25 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH ICE, COLLECTOR TO EMITTER CURRENT (A) CIES 1500 1000 500 COES CRES 20 FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT TJ = 150oC, TC = 75oC RG = 25Ω, L = 100µH 100 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 200 10 0 IG REF = 1.276mA, RL = 50Ω, TC = 25oC 12 VCE = 600V 9 6 VCE = 400V VCE = 200V 3 0 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 25 0 10 20 30 40 50 60 Qg , GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves (Continued) 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 0.01 PD DUTY FACTOR, D = t1 / t2 SINGLE PULSE 10-2 10-5 t2 PEAK TJ = PD x ZθJC x RθJC + TC 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 35 TC = 25oC, dIEC/dt = 200A/ms 30 40 tR , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 50 25oC 30 100oC 20 150oC 10 trr 25 ta 20 15 tb 10 5 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 5 VEC , FORWARD VOLTAGE (V) 10 15 20 IEC , FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveform HGTP12N60C3D 90% 10% VGE EOFF L = 100µH EON VCE RG = 25Ω 90% + - ICE VDD = 480V 10% td(OFF)I tfi tri td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 21. SWITCHING TEST WAVEFORMS HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required, an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS TO-220AB (Alternate Version) 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A E ØP INCHES A1 Q H1 TERM. 4 D L1 b1 c 1 2 3 e e1 J1 MILLIMETERS MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 2, 4 b 0.030 0.034 0.77 0.86 2, 4 b1 0.045 0.055 1.15 1.39 2, 4 c 0.018 0.022 0.46 0.55 2, 4 D 0.590 0.610 14.99 15.49 - E 0.395 0.405 10.04 10.28 e1 60o MIN A1 e b L SYMBOL 0.100 TYP 0.200 BSC H1 0.235 0.255 J1 0.095 0.105 L 0.530 0.550 - 2.54 TYP 5 5.08 BSC 5 5.97 6.47 - 2.42 2.66 6 13.47 13.97 - L1 0.110 0.130 2.80 3.30 3 ØP 0.149 0.153 3.79 3.88 - Q 0.105 0.115 2.66 2.92 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Dimension (without solder). 3. Solder finish uncontrolled in this area. 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 3 dated 7-97. ©2001 Fairchild Semiconductor Corporation HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 HGTP12N60C3D, HGT1S12N60C3DS TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE E A INCHES A1 H1 MIN MAX MIN MAX A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 4, 5 TERM. 4 D L2 L1 L 1 3 b e c TERM. 4 0.450 (11.43) L3 0.350 (8.89) b2 0.700 (17.78) 3 0.150 (3.81) 1 b 0.030 0.034 0.77 0.86 4, 5 0.045 0.055 1.15 1.39 4, 5 b2 0.310 - 7.88 - 2 c 0.018 0.022 0.46 0.55 4, 5 D 0.405 0.425 10.29 10.79 - E 0.395 0.405 10.04 10.28 e1 J1 e1 0.080 TYP (2.03) 0.062 TYP (1.58) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS 1.5mm DIA. HOLE NOTES b1 e b1 MILLIMETERS SYMBOL 0.100 TYP 0.200 BSC - 2.54 TYP 7 5.08 BSC 7 H1 0.045 0.055 1.15 1.39 - J1 0.095 0.105 2.42 2.66 - L 0.175 0.195 4.45 4.95 - L1 0.090 0.110 2.29 2.79 4, 6 L2 0.050 0.070 1.27 1.77 3 L3 0.315 - 8.01 - 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 10 dated 5-99. 4.0mm USER DIRECTION OF FEED 2.0mm TO-263AB 1.75mm C L 24mm TAPE AND REEL 24mm 16mm COVER TAPE 40mm MIN. ACCESS HOLE 30.4mm 13mm 330mm 100mm GENERAL INFORMATION 1. 800 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. ©2001 Fairchild Semiconductor Corporation 24.4mm HGTP12N60C3D, HGT1S12N60C3DS Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ SMART START™ VCX™ OPTOLOGIC™ FAST® Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ Ensigna™ FACT™ FACT QuietSerie™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER® STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4