Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options Available * For more information see the Surface Mount Schottky Reliability Data Sheet. Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. Note that Agilent’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Package Lead Code Identification, SOT-23/SOT-143 (Top View) SINGLE 3 SERIES 3 1 1 #0 2 UNCONNECTED PAIR 3 4 1 #5 2 #2 2 RING QUAD 3 4 1 #7 2 Package Lead Code Identification, SOT-323 (Top View) SINGLE B COMMON ANODE E SERIES C COMMON CATHODE COMMON ANODE 3 1 #3 COMMON CATHODE 3 2 1 #4 2 BRIDGE QUAD 3 4 1 #8 2 Package Lead Code Identification, SOT-363 (Top View) HIGH ISOLATION UNCONNECTED PAIR 6 5 1 2 4 6 5 3 1 2 K 5 1 2 4 3 L COMMON CATHODE QUAD 6 UNCONNECTED TRIO 4 COMMON ANODE QUAD 6 5 1 2 4 F M 3 BRIDGE QUAD 6 5 1 2 P 4 6 3 1 N 3 RING QUAD 5 2 4 R 3 2 Pin Connections and Package Marking, SOT-363 GUx 1 2 3 6 5 4 Notes: 1. Package marking provides orientation and identification. 2. See “Electrical Specifications” for appropriate package marking. ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Absolute Maximum Ratings[1] TC = 25°C Symbol If PIV Tj Tstg θjc Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363 Forward Current (1 µs Pulse) Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance[2] Amp V °C °C °C/W 1 Same as VBR 150 -65 to 150 500 1 Same as VBR 150 -65 to 150 150 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Electrical Specifications TA = 25°C, Single Diode[4] Part Package Number Marking Lead HSMS[5] Code Code 2800 2802 2803 2804 2805 2807 2808 280B 280C 280E 280F 280K A0[3] A2[3] A3[3] A4[3] A5[3] A7[3] A8[3] A0[7] A2[7] A3[7] A4[7] AK[7] 0 2 3 4 5 7 8 B C E F K 280L 280M 280N 280P 280R AL[7] H[7] N[7] AP[7] O[7] L M N P R Test Conditions Configuration Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[5] Bridge Quad[5] Single Series Common Anode Common Cathode High Isolation Unconnected Pair Unconnected Trio Common Cathode Quad Common Anode Quad Bridge Quad Ring Quad Minimum Maximum Breakdown Forward Voltage Voltage VBR (V) VF (mV) 70 400 IR = 10 µA IF = 1 mA Maximum Forward Voltage VF (V) @ IF (mA) 1.0 15 Maximum Reverse Typical Leakage Maximum Dynamic IR (nA) @ Capacitance Resistance VR (V) CT (pF) RD (Ω) [6] 200 50 2.0 35 VF = 0 V f = 1 MHz IF = 5 mA Notes: 1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum. 3. Package marking code is in white. 4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 5. See section titled “Quad Capacitance.” 6. R D = R S + 5.2 Ω at 25°C and I f = 5 mA. 7. Package marking code is laser marked. 3 Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. Agilent defines this measurement as “CM”, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C1 x C2 C3 x C4 CDIAGONAL = _______ + _______ C1 + C2 C3 + C4 1 CADJACENT = C1 + ____________ 1 1 1 –– + –– + –– C2 C 3 C4 A C1 C3 C2 C4 This information does not apply to cross-over quad diodes. C Linear Equivalent Circuit, Diode Chip Rj RS Cj RS = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) Rj = The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, °K n = ideality factor (see table of SPICE parameters) Note: To effectively model the packaged HSMS-280x product, please refer to Application Note AN1124. B SPICE Parameters Parameter Units BV CJ0 EG IBV IS N RS PB PT M V pF eV A A Ω V HSMS-280x 75 1.6 0.69 E-5 3E - 8 1.08 30 0.65 2 0.5 4 Typical Performance, TC = 25°C (unless otherwise noted), Single Diode 1000 10,000 10 1 TA = +125°C TA = +75°C TA = +25°C TA = –25°C 0 1000 100 TA = +125°C TA = +75°C TA = +25°C 10 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 VF – FORWARD VOLTAGE (V) 10 20 30 40 30 IF - FORWARD CURRENT (mA) 1.5 1 0.5 0 0 10 20 30 40 VR – REVERSE VOLTAGE (V) Figure 4. Total Capacitance vs. Reverse Voltage. 50 30 IF (Left Scale) 10 10 ∆VF (Right Scale) 1 0.3 0.2 1 0.4 0.6 0.8 1.0 1.2 1 10 Figure 3. Dynamic Resistance vs. Forward Current. Figure 2. Reverse Current vs. Reverse Voltage at Temperatures. 2 10 I F – FORWARD CURRENT (mA) VR – REVERSE VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage at Temperatures. 100 1 0.1 50 0.3 1.4 VF - FORWARD VOLTAGE (V) Figure 5. Typical Vf Match, Pairs and Quads. ∆VF - FORWARD VOLTAGE DIFFERENCE (mV) 0.1 0.01 C T – CAPACITANCE (pF) RD – DYNAMIC RESISTANCE (Ω) 100,000 I R – REVERSE CURRENT (nA) I F – FORWARD CURRENT (mA) 100 100 5 Applications Information Introduction — Product Selection Agilent’s family of Schottky products provides unique solutions to many design problems. The first step in choosing the right product is to select the diode type. All of the products in the HSMS-280x family use the same diode chip, and the same is true of the HSMS-281x and HSMS-282x families. Each family has a different set of characteristics which can be compared most easily by consulting the SPICE parameters in Table 1. A review of these data shows that the HSMS-280x family has the highest breakdown voltage, but at the expense of a high value of series resistance (Rs). In applications which do not require high voltage the HSMS-282x family, with a lower value of series resistance, will offer higher current carrying capacity and better performance. The HSMS281x family is a hybrid Schottky (as is the HSMS-280x), offering lower 1/f or flicker noise than the HSMS-282x family. In general, the HSMS-282x family should be the designer’s first choice, with the -280x family reserved for high voltage applications and the HSMS-281x family for low flicker noise applications. Assembly Instructions SOT-323 PCB Footprint A recommended PCB pad layout for the miniature SOT-323 (SC-70) package is shown in Figure 6 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance. 0.026 0.07 0.035 0.016 Figure 6. PCB Pad Layout (dimensions in inches). Assembly Instructions SOT-363 PCB Footprint A recommended PCB pad layout for the miniature SOT-363 (SC-70, 6 lead) package is shown in Figure 7 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance. 0.026 Table 1. Typical SPICE Parameters. Parameter Units HSMS-280x HSMS-281x HSMS-282x BV CJ0 EG IBV IS N RS PB (VJ) PT (XTI) M V pF eV A A 75 1.6 0.69 1 E-5 3 E-8 1.08 30 0.65 2 0.5 25 1.1 0.69 1 E-5 4.8 E-9 1.08 10 0.65 2 0.5 15 0.7 0.69 1 E-4 2.2 E-8 1.08 6.0 0.65 2 0.5 0.075 Ω V 0.035 0.016 Figure 7. PCB Pad Layout (dimensions in inches). 6 After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT package, will reach solder reflow temperatures faster than those with a greater mass. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 235°C. Agilent’s SOT diodes have been qualified to the time-temperature profile shown in Figure 8. This profile is representative of an IR reflow type of surface mount assembly process. 250 TMAX TEMPERATURE (°C) 200 150 Reflow Zone 100 Preheat Zone Cool Down Zone 50 0 0 60 120 180 TIME (seconds) Figure 8. Surface Mount Assembly Profile. 240 300 These parameters are typical for a surface mount assembly process for Agilent diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. 7 Part Number Ordering Information Part Number HSMS-280x-TR2* No. of Devices 10000 Container 13" Reel HSMS-280x-TR1* HSMS-280x-BLK * 3000 100 7" Reel antistatic bag x = 0, 2, 3, 4, 5, 7, 8, B, C, E, F, K, L, M, N, P, R Package Dimensions Outline 23 (SOT-23) 1.02 (0.040) 0.89 (0.035) Outline SOT-363 (SC-70 6 Lead) 0.54 (0.021) 0.37 (0.015) * 1.03 (0.041) 0.89 (0.035) PACKAGE MARKING CODE (XX) DATE CODE (X) PACKAGE MARKING CODE (XX) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) XXX DATE CODE (X) 3 1.40 (0.055) 1.20 (0.047) XXX * 1.35 (0.053) 1.15 (0.045) 2 1 0.60 (0.024) 0.45 (0.018) 2.65 (0.104) 2.10 (0.083) 0.650 BSC (0.025) 2.04 (0.080) 1.78 (0.070) 2.05 (0.080) 1.78 (0.070) 0.425 (0.017) TYP. 2.20 (0.087) 1.80 (0.071) TOP VIEW (0.007) * 0.180 0.085 (0.003) 0.10 (0.004) 0.00 (0.00) 0.152 (0.006) 0.086 (0.003) 3.06 (0.120) 2.80 (0.110) 0.30 REF. 1.04 (0.041) 0.85 (0.033) 1.00 (0.039) 0.80 (0.031) 0.69 (0.027) 0.45 (0.018) 0.10 (0.004) 0.013 (0.0005) SIDE VIEW 10° 0.25 (0.010) 0.15 (0.006) 0.20 (0.008) 0.10 (0.004) 0.30 (0.012) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) END VIEW * THESE DIMENSIONS FOR HSMS-280X AND -281X FAMILIES ONLY. DIMENSIONS ARE IN MILLIMETERS (INCHES) Outline 143 (SOT-143) Outline SOT-323 (SC-70 3 Lead) 0.92 (0.036) 0.78 (0.031) DATE CODE (X) E PACKAGE MARKING CODE (XX) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) XXX DATE CODE (X) C 1.40 (0.055) 1.20 (0.047) XXX B PACKAGE MARKING CODE (XX) 2.65 (0.104) 2.10 (0.083) 1.35 (0.053) 1.15 (0.045) E 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 0.650 BSC (0.025) 0.54 (0.021) 0.37 (0.015) 3.06 (0.120) 2.80 (0.110) 0.425 (0.017) TYP. 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.15 (0.006) 0.09 (0.003) 1.04 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.30 REF. 0.25 (0.010) 0.15 (0.006) 0.69 (0.027) 0.45 (0.018) 1.00 (0.039) 0.80 (0.031) 10° 0.30 (0.012) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.20 (0.008) 0.10 (0.004) Tape Dimensions and Product Orientation For Outline SOT-323 (SC-70 3 Lead) P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.255 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Obsoletes 5968-2356E, 5968-5943E 5968-7960E (11/99)