64Mx64bits PC133 SDRAM SO DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64M636B(L)F Series Preliminary DESCRIPTION The HYM72V64M636B(L)F8 is 64Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 32Mx8bits CMOS Synchronous DRAMs in FBGA package, one 2Kbit EEPROM in 8pin TSOP package on a 144pin glass-epoxy printed circuit board. One 0.1uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The HYM72V64M636B(L)F8 is Small Outline Dual In-line Memory Modules suitable for easy interchange and addition of 512Mbytes memory. The HYM72V64M636B(L)F8 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES • PC133MHz support • Module bank : two physical bank • 144pin SDRAM Unbuffered DIMM • Auto refresh and self refresh • Serial Presence Detect with EEPROM • 8192 refresh cycles / 64ms • 1.181” Height PCB with double sided components • Programmable Burst Length and Burst Type • Single 3.3±0.3V power supply - 1, 2, 4 or 8 or Full page for Sequential Burst • All device pins are compatible with LVTTL interface - 1, 2, 4 or 8 for Interleave Burst • Data mask function by DQM • SDRAM internal banks : four banks • Programmable CAS Latency ; 2, 3 Clocks ORDERING INFORMATION Part No. Clock Frequency HYM72V64M636BF8-K 133MHz HYM72V64M636BF8-H 133MHz HYM72V64M636BLF8-K 133MHz HYM72V64M636BLF8-H 133MHz Internal Bank Ref. Power SDRAM Package Plating 54ball FBGA Gold Normal 4 Banks 8K Low Power This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1/Apr. 02 1 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series PIN DESCRIPTION PIN PIN NAME DESCRIPTION CK0, CK1 Clock Inputs The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE0 Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh /S0, /S1 Chip Select Enables or disables all inputs except CK, CKE and DQM BA0, BA1 SDRAM Bank Address Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity A0 ~ A12 Address Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 /RAS, /CAS, /WE Row Address Strobe, Column Address Strobe, Write Enable /RAS, /CAS and /WE define the operation Refer function truth table for details DQM0~DQM7 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ63 Data Input/Output Multiplexed data input / output pin VCC Power Supply (3.3V) Power supply for internal circuits and input buffers VSS Ground Ground SCL SPD Clock Input Serial Presence Detect Clock input SDA SPD Data Input/Output Serial Presence Detect Data input/output SA0~2 SPD Address Input Serial Presence Detect Address Input NC No Connection No connection Rev. 0.1/Apr. 02 2 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series PIN ASSIGNMENTS FRONT SIDE PIN NO. BACK SIDE NAME PIN NO. 1 VSS 3 DQ0 5 7 FRONT SIDE NAME PIN NO. 2 VSS 4 DQ32 DQ1 6 DQ2 8 9 DQ3 10 BACK SIDE NAME PIN NO. NAME 71 S1 72 NC 73 NC 74 CK1 DQ33 75 VSS 76 VSS DQ34 77 NC 78 NC DQ35 79 NC 80 NC 11 VCC 12 VCC 81 VCC 82 VCC 13 DQ4 14 DQ36 83 DQ16 84 DQ48 15 DQ5 16 DQ37 85 DQ17 86 DQ49 17 DQ6 18 DQ38 87 DQ18 88 DQ50 19 DQ7 20 DQ39 89 DQ19 90 DQ51 21 VSS 22 VSS 91 VSS 92 VSS 23 DQM0 24 DQM4 93 DQ20 94 DQ52 25 DQM1 26 DQM5 95 DQ21 96 DQ53 27 VCC 28 VCC 97 DQ22 98 DQ54 29 A0 30 A3 99 DQ23 100 DQ55 31 A1 32 A4 101 VCC 102 VCC 33 A2 34 A5 103 A6 104 A7 35 VSS 36 VSS 105 A8 106 BA0 37 DQ8 38 DQ40 107 VSS 108 VSS 39 DQ9 40 DQ41 109 A9 110 BA1 41 DQ10 42 DQ42 111 A10/AP 112 A11 43 DQ11 44 DQ43 113 VCC 114 VCC 45 VCC 46 VCC 115 DQM2 116 DQM6 47 DQ12 48 DQ44 117 DQM3 118 DQM7 49 DQ13 50 DQ45 119 VSS 120 VSS 51 DQ14 52 DQ46 121 DQ24 122 DQ56 53 DQ15 54 DQ47 123 DQ25 124 DQ57 55 VSS 56 VSS 125 DQ26 126 DQ58 57 NC 58 NC 127 DQ27 128 DQ59 59 NC 60 NC 129 VCC 130 VCC 131 DQ28 132 DQ60 Voltage Key 61 133 DQ29 134 DQ61 CKE0 135 DQ30 136 DQ62 64 VCC 137 DQ31 138 DQ63 66 /CAS 139 VSS 140 VSS /WE 68 NC 141 SDA 142 SCL /S0 70 A12 143 VCC 144 VCC CK0 62 63 VCC 65 /RAS 67 69 Rev. 0.1/Apr. 02 3 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series BLOCK DIAGRAM - /S 0 ● - /S 1 ● P C LK 2 P C LK 0 CLK DQM0 DQM D Q 0~7 CLK - CS D1 CLK DQM D Q 8~15 CLK DQM D Q 16~23 CLK - CS D2 CLK DQM D Q 24~31 CLK D3 DQM CLK - CS D4 D7 D8 DQ 0~7 A 0~A n,B A 0& 1 S D R A M U 1~U 16 /R A S S D R A M U 1~U 16 /C A S S D R A M U 1~U 16 /W E S D R A M U 1~U 16 CKE0 S D R A M U 1~U 8 CKE1 S D R A M U 9~U 16 - CS CLK - CS DQM D9 DQM D 13 DQM5 D Q 40~47 DQ 0~7 CLK - CS CLK - CS DQM D 10 DQM D 14 DQ 0~7 DQM6 D Q 48~55 DQ 0~7 CLK - CS DQM D 11 DQ 0~7 - CS DQM D 15 DQ 0~7 CLK - CS CLK - CS DQM D 12 DQM D 16 DQM7 D Q 46~63 CLK DQ 0~7 DQ 0~7 10 O hm C LK 0 P C LK 0 10 O hm P C LK 1 10 O hm C LK 1 P C LK 2 10 O hm P C LK 3 S erial P D O ne 0.1 uF C apacitor Rev. 0.1/Apr. 02 CLK E very D Q pin of S D R A M s V DD V SS P C LK 3 DQ 0~7 - CS DQM 10 O hm D Q 32~39 - CS DQ 0~7 DQ 0~7 DQn D6 DQ 0~7 - CS DQM4 - CS DQM DQ 0~7 DQM3 D5 DQ 0~7 DQ 0~7 DQM2 - CS DQM DQ 0~7 DQM1 P C LK 1 P er each S D R A M SCL T o all S D R A M s WP SDA A0 A1 A2 ● ● 4 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series SERIAL PRESENCE DETECT BYTE NUMBER FUNCTION DESCRIPTION FUNCTION VALUE -H -K -H -K BYTE1 # of Bytes Written into Serial Memory at Module Manufacturer Total # of Bytes of SPD Memory Device BYTE2 Fundamental Memory Type SDRAM 04h BYTE3 # of Row Addresses on This Assembly 13 0Dh BYTE4 # of Column Addresses on This Assembly 10 0Ah BYTE0 128 Bytes 80h 256 Bytes 08h BYTE5 # of Module Banks on This Assembly 2 Bank 02h BYTE6 Data Width of This Assembly 64 Bits 40h BYTE7 Data Width of This Assembly (Continued) - 00h BYTE8 Voltage Interface Standard of This Assembly BYTE9 SDRAM Cycle Time @/CAS Latency=3 7.5ns 7.5ns 75h BYTE10 Access Time from Clock @/CAS Latency=3 5.4ns 5.4ns 54h BYTE11 DIMM Configuration Type BYTE12 Refresh Rate/Type BYTE13 Primary SDRAM Width BYTE14 BYTE16 Error Checking SDRAM Width Minimum Clock Delay Back to Back Random Column Address Burst Lenth Supported BYTE17 # of Banks on Each SDRAM Device BYTE18 SDRAM Device Attributes, /CAS Lataency BYTE19 SDRAM Device Attributes, /CS Lataency BYTE15 LVTTL 1 01h 75h 54h None 00h 7.8125us / Self Refresh Supported 82h x8 08h None 00h tCCD = 1 CLK 01h 1,2,4,8,Full Page 8Fh 4 Banks 04h /CAS Latency=2,3 06h /CS Latency=0 01h 2 BYTE20 SDRAM Device Attributes, /WE Lataency /WE Latency=0 01h BYTE21 SDRAM Module Attributes Neither Buffered nor Registered 00h BYTE22 SDRAM Device Attributes, General +/- 10% voltage tolerence, Burst Read Single Bit Write, Precharge All, Auto Precharge, Early RAS Precharge 0Eh BYTE23 SDRAM Cycle Time @/CAS Latency=2 7.5ns 10ns 75h BYTE24 Access Time from Clock @/CAS Latency=2 5.4ns 6ns 54h BYTE25 SDRAM Cycle Time @/CAS Latency=1 - A0h 60h 00h BYTE26 Access Time from Clock @/CAS Latency=1 BYTE27 Minimum Row Precharge Time (tRP) 15ns 20ns 0Fh 14h BYTE28 Minimum Row Active to Row Active Delay (tRRD) 15ns 15ns 0Fh 0Fh BYTE29 Minimum /RAS to /CAS Delay (tRCD) 15ns 20ns 0Fh 14h BYTE30 Minimum /RAS Pulse Width (tRAS) 45ns 45ns 2Dh 2Dh BYTE31 Module Bank Density BYTE32 Command and Address Signal Input Setup Time 1.5ns 1.5ns 15h BYTE33 Command and Address Signal Input Hold Time 0.8ns 0.8ns 08h 08h BYTE34 Data Signal Input Setup Time 1.5ns 1.5ns 15h 15h BYTE35 BYTE36 ~61 BYTE62 Data Signal Input Hold Time 0.8ns 0.8ns 08h BYTE63 Checksum for Byte 0~62 BYTE64 BYTE65 ~71 BYTE72 Superset Information (may be used in future) SPD Revision Manufacturer JEDEC ID Code ....Manufacturer JEDEC ID Code Manufacturing Location Rev. 0.1/Apr. 02 NOTE - 00h 256MB 40h TBD 08h 00h Intel SPD 1.2B - 15h 12h 3, 8 D3h 92h Hynix JEDED ID ADh Unused FFh Hynix (Korea Area) HSA (United States Area) HSE (Europe Area) HSJ (Japan Area) HSS(Singapore) ASIA Area 0*h 1*h 2*h 3*h 4*h 5*h 10 5 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series Continued BYTE NUMBER FUNCTION DESCRIPTION BYTE73 Manufacturer’s Part Number (Component) BYTE74 Manufacturer’s Part Number (128Mb based) BYTE75 Manufacturer’s Part Number (Voltage Interface) BYTE76 BYTE77 BYTE78 Manufacturer’s Part Number (Module Type) BYTE79 BYTE80 BYTE81 Manufacturer’s Part Number (Refresh, SDRAM Bank) BYTE82 BYTE83 BYTE84 Manufacturer’s Part Number (Component Configuration) BYTE85 Manufacturer’s Part Number (Hyphent) BYTE86 Manufacturer’s Part Number (Min. Cycle Time) FUNCTION VALUE -H -K -H -K NOTE 7 (SDRAM) 37h 4, 5 2 32h 4, 5 V (3.3V, LVTTL) 56h 4, 5 Manufacturer’s Part Number (Memory Width) 6 33h 4, 5 ....Manufacturer’s Part Number (Memory Width) 4 32h 4, 5 M (SO DIMM) 4Dh 4, 5 Manufacturer’s Part Number (Data Width) 6 36h 4, 5 ....Manufacturer’s Part Number (Data Width) 3 33h 4, 5 6 (8K Refresh, 4Banks) 38h 4, 5 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5 Manufacturer’s Part Number (Package Type) F 46h 4, 5 8 (x8 based) 38h 4, 5 - (Hyphen) 2Dh 4, 5 K H 4Bh 48h 4, 5 BYTE87 ~90 Manufacturer’s Part Number Blanks 20h 4, 5 BYTE91 Revision Code (for Component) Process Code - 4, 6 BYTE92 ....Revision Code (for PCB) Process Code - 4, 6 BYTE93 Manufacturing Date Year - 3, 6 BYTE94 ....Manufacturing Date Work Week - 3, 6 Serial Number - 6 None 00h 100MHz 64h BYTE95 ~98 BYTE99 ~125 Assembly Serial Number Manufacturer Specific Data (may be used in future) BYTE126 Reserved BYTE127 Intel Specification Details for 100MHz Support BYTE128 ~256 Unused Storage Locations Refer to Note7 CFh - 7, 8, 9 CFh 7, 8, 9 00h Note : 1. The bank address is excluded 2. 1, 2, 4, 8 for Interleave Burst Type 3. BCD adopted 4. ASCII adopted 5. Basically Hynix writes Part No. except for ‘HYM’ in Byte 73~90 to use the limited 18 bytes from byte 73 to byte 90 6. Not fixed but dependent 7. CK0, CK1 connected to DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support 8. Refer to Intel SPD Specification 1.2B 9. In the case of L-Part, character ‘L’ will be added between byte 81 and byte 82. 10. Refer to Hynix Web site. Byte 82~84 for L-Part BYTE NUMBER FUNCTION DESCRIPTION FUNCTION -H -K VALUE -H -K NOTE BYTE82 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5 BYTE83 Manufacturer’s Part Number (Power) L 4Ch 4, 5 BYTE84 Manufacturer’s Part Number (Package Type) F 46h 4, 5 Rev. 0.1/Apr. 02 6 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TSTG -55 ~ 125 °C Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 16 W Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION (TA=0 to 70°C) Parameter Symbol Min Typ Max Unit Note Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1 Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2 Input Low voltage VIL -0.3 0 0.8 V 1,3 Note Note : 1.All voltages are referenced to VSS = 0V 2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. 3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration. AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V) Parameter Symbol Value Unit AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF Input Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement 1 Note : 1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output load circuit Rev. 0.1/Apr. 02 7 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series CAPACITANCE (TA=25°C, f=1MHz) -K/H Parameter Pin Input Capacitance Data Input / Output Capacitance Symbol Unit Min Max CK0, CK1 CI1 25 60 pF CKE0, CKE1 CI2 35 55 pF /S0, /S1 CI3 25 50 pF A0~11, BA0, BA1 CI4 60 90 pF /RAS, /CAS, /WE CI5 60 90 pF DQM0~DQM7 CI6 15 25 pF DQ0 ~ DQ63 CI/O 10 25 pF OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output Output 50pF DC Output Load Circuit Rev. 0.1/Apr. 02 50pF AC Output Load Circuit 8 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V) Parameter Symbol Min. Max Unit Note Input Leakage Current ILI -16 16 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -2mA Output Low Voltage VOL - 0.4 V IOL = +2mA Note : 1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V 2.DOUT is disabled, VOUT=0 to 3.6 DC CHARACTERISTICS II Parameter Operating Current Symbol IDD1 Speed Test Condition -K Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA -H 1200 Unit Note mA 1 CKE ≤ VIL(max), tCK = min 32 CKE ≤ VIL(max), tCK = ∞ 32 CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 320 IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 224 IDD3P CKE ≤ VIL(max), tCK = min 112 IDD3PS CKE ≤ VIL(max), tCK = ∞ 112 IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 640 IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 640 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 1600 mA 1 Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active 1920 mA 2 Self Refresh Current IDD6 CKE ≤ 0.2V Normal 55 mA 3 Low power 27 mA 4 IDD2P Precharge Standby Current in Power Down Mode IDD2PS IDD2N Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode mA mA mA mA Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HYM72V64M636BF8-K/H 4.HYM72V64M636BLF8-K/H Rev. 0.1/Apr. 02 9 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -K Parameter Unit Min System Clock Cycle Time CAS Latency = 3 -H Symbol tCK3 Max Min 7.5 7.5 1000 ns 1000 tCK2 7.5 Clock High Pulse Width tCHW 2.5 - 2.5 - ns 1 Clock Low Pulse Width tCLW 2.5 - 2.5 - ns 1 CAS Latency = 3 tAC3 - 5.4 - 5.4 ns CAS Latency = 2 tAC2 - 5.4 - 6 ns Data-Out Hold Time tOH 2.7 - 2.7 - ns Data-Input Setup Time tDS 1.5 - 1.5 - ns 1 Data-Input Hold Time tDH 0.8 - 0.8 - ns 1 Address Setup Time tAS 1.5 - 1.5 - ns 1 Address Hold Time tAH 0.8 - 0.8 - ns 1 CKE Setup Time tCKS 1.5 - 1.5 - ns 1 CKE Hold Time tCKH 0.8 - 0.8 - ns 1 Command Setup Time tCS 1.5 - 1.5 - ns 1 Command Hold Time tCH 0.8 - 0.8 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - 1 - ns Access Time From Clock CLK to Data Output in High-Z Time CAS Latency = 2 Note Max 10 ns 2 CAS Latency = 3 tOHZ3 2.7 5.4 2.7 5.4 ns CAS Latency = 2 tOHZ2 3 6 3 6 ns Note : 1.Assume tR / tF (input rise and fall time ) is 1ns If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 0.1/Apr. 02 10 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series AC CHARACTERISTICS II -K Parameter -H Symbol Unit Min Max Min Max Operation tRC 60 - 65 - ns Auto Refresh tRRC 60 - 65 - ns RAS to CAS Delay tRCD 20 - 20 - ns RAS Active Time tRAS 45 100K 45 100K ns RAS Precharge Time tRP 20 - 20 - ns RAS to RAS Bank Active Delay tRRD 15 - 15 - ns CAS to CAS Delay tCCD 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - CLK Data-In to Precharge Command tDPL 2 - 2 - CLK Data-In to Active Command tDAL 5 - 5 - CLK DQM to Data-Out Hi-Z tDQZ 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - CLK CAS Latency = 3 tPROZ3 3 - 3 - CLK CAS Latency = 2 tPROZ2 2 - 2 - CLK Power Down Exit Time tPDE 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - CLK Refresh Time tREF - 64 - 64 ms Note RAS Cycle Time Precharge to Data Output Hi-Z 1 Note : 1. A new command can be given tRRC after self refresh exit Rev. 0.1/Apr. 02 11 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series DEVICE OPERATING OPTION TABLE HYM72V64M636B(L)F8-K CAS Latency tRCD tRAS tRC tRP tAC tOH 133MHz(7.5ns) 2CLKs 2CLKs 6CLKs 8CLKs 2CLKs 5.4ns 2.7ns 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns HYM72V64M636B(L)F8-H CAS Latency tRCD tRAS tRC tRP tAC tOH 133MHz(7.5ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns Rev. 0.1/Apr. 02 12 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series COMMAND TRUTH TABLE Command A10/ AP CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X OP code No Operation H X H X X X L H H H X X Bank Active H X L L H H X H X L H L H X CA H X L H L L X CA H X L L H L X X Burst Stop H X L H H L X X DQM H V X Auto Refresh H H L L L H X X Burst-Read-SingleWRITE H X L L L H X A9 Pin High (Other Pins OP code) Entry H L L L L H X Exit L H H X X X L H H H Entry H L H X X X L H H H H X X X L H H H H X X X L V V V Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Self Refresh1 X Precharge power down Clock Suspend Exit L H Entry H L Exit L H X X ADDR RA BA Note V L H L H V V H X L V X X X X X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Opcode = Operand Code, NOP = No Operation Rev. 0.1/Apr. 02 13 PC133 SDRAM SO DIMM HYM72V64M636B(L)F8 Series Rev. 0.1/Apr. 02 14