PD - 91293B POWER MOSFET THRU-HOLE (TO-257AA) IRFY9130C,IRFY9130CM 100V, P-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. TO-257AA Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited For Space Level Applications Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -11.2 -7.1 -44 75 0.6 ±20 400 -11.2 7.5 -5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 4/18/01 IRFY9130C, IRFY9130CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — Typ Max Units — — V -0.1 — V/°C — 0.30 Ω — — — — -4.0 — -25 -250 V S( ) — — — — — — — — — 6.8 -100 100 30 7.1 2.1 60 140 140 140 — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -7.1A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -7.1A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -10V, ID = -11.2A VDS = -50V Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -100 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current — — µA nA nC VDD = -50V, ID = -11.2A, RG = 7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 800 350 125 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -11.2 -44 -4.7 250 3.0 Test Conditions A V nS µC Tj = 25°C, IS = -11.2A, VGS = 0V ➃ Tj = 25°C, IF = -11.2A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max Units — — — — 1.67 0.21 — — 80 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFY9130C, IRFY9130CM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics ID=-11.2A Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFY9130C, IRFY9130CM ID=-11.2A 3a 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFY9130C, IRFY9130CM V DS VGS RD D.U.T. RG + V DD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFY9130C, IRFY9130CM L VDS D .U .T RG IA S -20V -10V tp VD D A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -10V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFY9130C, IRFY9130CM Foot Notes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ -11.2A, di/dt ≤ -140A/µs, maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L= 6.4mH Peak IL = -11.2A, VGS = -10V ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -100V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7