ETC IRFY9240M

PD - 94199
POWER MOSFET
THRU-HOLE (TO-257AA)
IRFY9240,IRFY9240M
200V, P-CHANNEL
®
HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number
Rds(on)
Id
Eyelets
IRFY9240
0.51 Ω
-9.4A
Glass
IRFY9240M
0.51 Ω
-9.4A
Glass
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY9240C, IRFY9240CM
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-9.4
-6.0
-36
100
0.8
±20
700
-9.4
10
-5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300(0.063in.(1.6mm)from case for 10 sec)
3.3 (Typical)
C
g
For footnotes refer to the last page
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1
4/18/01
IRFY9240, IRFY9240M
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
—
V
-0.2
—
V/°C
—
0.51
Ω
—
—
—
—
-4.0
—
-25
-250
V
S( )
—
—
—
—
—
—
—
—
—
6.8
-100
100
60
15
38
35
85
85
65
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -6.0A ➃
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -6.0A ➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -9.4A
VDS = -100V
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
4.0
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nC
VDD = -100V, ID = -9.4A,
RG = 9.1Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
570
81
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-9.4
-36
-4.6
440
7.2
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = -9.4A, VGS = 0V ➃
Tj = 25°C, IF = -9.4A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 1.25
0.21 —
—
80
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFY9240, IRFY9240M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID= -9.4A
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFY9240, IRFY9240M
ID= -9.4A
3a
4
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFY9240, IRFY9240M
V DS
VGS
RD
D.U.T.
RG
+
V DD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
td(on)
tr
t d(off)
tf
VGS
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFY9240, IRFY9240M
L
VDS
D .U .T
RG
IA S
-20V
-10V
tp
VD D
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-10V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFY9240, IRFY9240M
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
➂ ISD ≤ -9.4A, di/dt ≤ -150A/µs,
maximum junction temperature.
➁ VDD = -50V, starting TJ = 25°C, L= 15mH
Peak IL = -9.4A, VGS = -10V
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ -200V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
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