PD -94274 IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets VCES = 600V VCE(on) max = 2.0V G @VGE = 15V, IC = 30A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 600 35* 30 140 140 ± 20 150 60 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) g Thermal Resistance Parameter R thJC Junction-to-Case Min Typ Max Units — — 0.83 Test Conditions °C/W * Current is limited by internal wire diameter www.irf.com 1 7/3/01 IRG4MC50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage S 17 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.58 ––– ––– VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– ––– ––– VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11.8 gfe Forward Transconductance T 21 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 1.0 mA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 2.0 IC = 30A 2.2 V IC = 35A See Fig.2, 5 1.9 IC = 30A , TJ = 125°C 6.0 VCE = VGE, IC = 1.0 mA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE ≥ 15V, IC = 30A 250 VGE = 0V, VCE = 480V µA 2000 VGE = 0V, VCE = 480V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Ets td(on) tr td(off) tr Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Rise Time Total Switching Loss Total Inductance Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 6.8 Max. Units Conditions 290 IC = 30A 42 nC VCC = 480V See Fig. 8 97 VGE = 15V 50 TJ = 25°C 25 IC = 30A, VCC = 480V ns 350 VGE = 15V, RG = 2.35Ω 300 Energy losses include "tail" 3.0 mJ See Fig. 10, 11, 13, 14 50 TJ = 150°C, 25 ns IC = 30A, VCC = 480V 475 VGE = 15V, RG = 2.35Ω 400 Energy losses include "tail" 6.0 mJ See Fig. 13, 14 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– 4100 ––– VGE = 0V ––– 250 ––– pF VCC = 30V See Fig. 7 ––– 49 ––– ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 2.35Ω, S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. (See fig. 13a) 2 www.irf.com IRG4MC50F 60 Triangular wave: Square wave: Load Current ( A ) 60% of rated voltage 40 Clamp voltage: 80% of rated Ideal diodes For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 33.7W 20 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 100 10 TJ = 150 °C TJ = 25 °C V = 15V 20µs PULSE WIDTH GE 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C TJ = 25 °C 10 V = 50V 5µs PULSE WIDTH CC 1 4 6 8 10 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4MC50F 3.0 60 VGE = 15V VCE , Collector-to Emitter Voltage (V) LIMITED BY PACKAGE 50 40 30 20 10 80µs PULSE WIDTH IC = 60A 2.0 IC = 30A IC = 15A 1.0 0 25 50 75 100 125 150 -60 -40 -20 Fig. 4 - Maximum Collector Current vs. Case Temperature 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) T J , Junction Temperature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC) Maximum DC Collector Current (Α) VGE = 15V D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4MC50F 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 6000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 8000 Cies 4000 Coes 2000 Cres 0 1 10 VCC = 480V 400V I C = 30A 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 100 3.00 VCC = 480V VGE = 15V TJ = 25°C Total Switching Losses (mJ) Total Switching Losses (mJ) I C = 30A 2.50 2.00 RG = 2.35Ω VGE = 15V VCC = 480V IC = 60A 10 IC = 30A IC = 20A 1 0.1 0 10 20 30 40 50 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4MC50F 1000 RG = 2.35Ω TJ = 150°C VGE = 15V IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 12.0 VCC = 480V 8.0 4.0 0.0 100 SAFE OPERATING AREA 10 1 10 20 30 40 50 60 IC , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125° 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4MC50F L D .U .T. VC * 50V RL = 0 - 720V 1 00 0V 720V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 720V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4MC50F Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 31.40 [1.235] 30.35 [1.195] 1 2 1 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 4.82 [.190] 3.81 [.150] 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 3.81 [.150] 3.81 [.150] 0.36 [.014] NOT E S : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ALL DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA. 2 B 17.40 [.685] 16.89 [.665] 3. CONT ROLLING DIMENS ION: INCH. 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 3 2X 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] B 2X 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A NOT ES: A PIN AS S IGNMENT S PIN ASSIGNMENTS 1 = DRAIN 1 = COLLECTOR 2 = S OURCE 2 = EMITTER 3 = GAT E 3 = GATE 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH. 4. CONFORMS T O JEDEC OUT LINE T O-254AA BEF ORE LEADF ORMING. PIN AS S IGNMENT S PIN ASSIGNMENTS 1 = DRAIN 1 = COLLECTOR 2 = S OURCE 2 = EMITTER 3 = GAT E 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 8 www.irf.com