Composite Transistors NP062A1 Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 0.80±0.05 ■ Features 0.10 5 1.00±0.05 6 (0.35) (0.35) 1.00±0.05 ■ Basic Part Number of Element 0.37+0.03 -0.02 • UNR32A1 × 2 elements ■ Absolute Maximum Ratings Ta = 25°C Parameter Rating of element Overall (0.10) Display at No.1 lead Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 80 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 7Z Internal Connection 6 5 Tr1 Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Conditions Min 4 Tr2 2 Typ 3 Parameter Symbol Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 35 hFE Ratio * hFE(Small/ VCE = 10 V, IC = 5 mA 0.5 Collector-emitter saturation voltage VCE(sat) 0.99 Large) IC = 10 mA, IB = 0.3 mA Output voltage high level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ Input resistance R1 Resistance ratio R1 / R 2 Transition frequency fT 0.25 4.9 −30% 0.8 VCB = 10 V, IE = −2 mA, f = 200 MHz V V 0.2 V 10 +30% kΩ 1.0 1.2 150 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another Publication date: December 2002 SJJ00271AED 1 NP062A1 120 0.9 mA 70 0.8 mA 100 80 60 40 20 VCE(sat) IC IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 50 0.2 mA 40 30 20 0.1 mA 10 Ta = 25°C 0 0 20 40 60 80 0 100 120 140 0 Ambient temperature Ta (°C) 2 4 −25°C 50 0 1 10 100 Collector current IC (mA) 10 1 0 5 10 15 20 25 Input voltage VIN (V) 10 10 100 Output current IO (mA) 2 0.1 −25°C 25°C IC / IB = 10 0.01 1 10 SJJ00271AED 100 1 000 IO VIN 30 35 Collector-base voltage VCB (V) VO = 0.2 V Ta = 25°C 1 Ta = 85°C Collector current IC (mA) 100 f = 1 MHz Ta = 25°C VIN IO 100 1 0.1 12 Output current IO (mA) 25°C 150 Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE Ta = 85°C 100 10 1 Cob VCB VCE = 10 V 200 8 10 Collector-emitter voltage VCE (V) hFE IC 250 6 Collector-emitter saturation voltage VCE(sat) (V) IC VCE 80 Collector current IC (mA) Total power dissipation PT (mW) PT Ta 140 40 VO = 5 V Ta = 25°C 10 1 0.1 0 0.5 1.0 1.5 2.0 Input voltage VIN (V) 2.5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL