ETC NSBC114EPDXV6/D

NSBC114EPDXV6T1,
NSBC114EPDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
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(3)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
•
•
•
•
•
(2)
R1
(1)
R2
Q1
Q2
R2
R1
(4)
(5)
6
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
Lead Free Solder Plating
(6)
54
1
23
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
Rating
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
350
(Note 1)
°C/W
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
RJA
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
mW/°C
xx D
xx = Specific Device Code
(see table on page 2)
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NSBC114EPDXV6T1 SOT−563
4 mm pitch
4000/Tape & Reel
NSBC114EPDXV6T5 SOT−563
2 mm pitch
8000/Tape & Reel
DEVICE MARKING INFORMATION
mW/°C
RJA
250
(Note 1)
°C/W
TJ, Tstg
−55 to
+150
°C
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−4 @ Minimum Pad
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
1
Publication Order Number:
NSBC114EPDXV6/D
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (k)
R2 (k)
NSBC114EPDXV6T1
SOT−563
11
10
10
NSBC124EPDXV6T1
SOT−563
12
22
22
NSBC144EPDXV6T1
SOT−563
13
47
47
NSBC114YPDXV6T1
SOT−563
14
10
47
NSBC114TPDXV6T1 (Note 2)
SOT−563
15
10
∞
NSBC143TPDXV6T1 (Note 2)
SOT−563
16
4.7
∞
NSBC113EPDXV6T1 (Note 2)
SOT−563
30
1.0
1.0
NSBC123EPDXV6T1 (Note 2)
SOT−563
31
2.2
2.2
NSBC143EPDXV6T1 (Note 2)
SOT−563
32
4.7
4.7
NSBC143ZPDXV6T1 (Note 2)
SOT−563
33
4.7
47
NSBC124XPDXV6T1 (Note 2)
SOT−563
34
22
47
NSBC123JPDXV6T1 (Note 2)
SOT−563
35
2.2
47
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
Characteristic
OFF CHARACTERISTICS
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1
(IC = 10 mA, IB = 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1
NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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2
Vdc
NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.0
0.21
−
1.0
0.1
0.47
0.047
1.2
0.25
−
1.2
0.185
0.56
0.056
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
Input Resistor
VOL
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
NSBC144EPDXV6T1
Vdc
NSBC113EPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC143ZPDXV6T1
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
Resistor Ratio
NSBC114EPDXV6T1/NSBC124EPDXV6T1/NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1/NSBC143TPDXV6T1
NSBC113EPDXV6T1/NSBC123EPDXV6T1/NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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3
NSBC114EPDXV6T1, NSBC114EPDXV6T5
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
−25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
VO = 5 V
0.001
50
TA=−25°C
10
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
100
VO = 5 V
0
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0
10
8
9
Figure 10. Output Current versus Input
Voltage
10
0.1
100
25°C
75°C
Figure 9. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 11. Input Voltage versus Output Current
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6
50
10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
−25°C
100
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
25°C
10
50
40
VCE = 10 V
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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7
50
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
40
TA=75°C
10
1
Figure 18. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
Figure 19. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 20. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
3
25°C
−25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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8
10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
10
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
1
25°C
TA=−25°C
75°C
0.1
0.01
0
TA=75°C
25°C
−25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
1
Figure 22. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 25. Output Current versus Input Voltage
Figure 24. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 23. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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9
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
−25°C
1
0.1
0.01
Figure 29. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 30. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
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10
10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
2
1
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 34. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 36. Input Voltage versus Output Current
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11
50
10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
−25°C
120
100
80
60
40
20
0
80
2
1
4
6
Figure 37. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0
10
8
10
Figure 40. Output Current versus Input Voltage
10
0.1
25°C
−25°C
1
50
Figure 39. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
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12
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
100
TA = 25°C
VCE = 10 V
VCE = 5.0 V
1.0
Figure 42. DC Current Gain − PNP
10
IC, COLLECTOR CURRENT (mA)
100
Figure 43. DC Current Gain − NPN
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
100
TA = 25°C
VCE = 10 V
VCE = 5.0 V
1.0
Figure 44. DC Current Gain − PNP
10
IC, COLLECTOR CURRENT (mA)
Figure 45. DC Current Gain − NPN
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13
100
NSBC114EPDXV6T1, NSBC114EPDXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE O
A
−X−
5
6
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
C
K
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
4
B
−Y−
3
D
G
J
5 PL
6
0.08 (0.003)
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
DIM
A
B
C
D
G
J
K
S
S
M
X Y
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 1
BASE 1
COLLECTOR 2
EMITTER 2
BASE 2
COLLECTOR 1
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 1
EMITTER2
BASE 2
COLLECTOR 2
BASE 1
COLLECTOR 1
CATHODE 1
CATHODE 1
ANODE/ANODE 2
CATHODE 2
CATHODE 2
ANODE/ANODE 1
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MIN
MAX
0.059
0.067
0.043
0.051
0.020
0.024
0.007
0.011
0.020 BSC
0.003
0.007
0.004
0.012
0.059
0.067
COLLECTOR
COLLECTOR
BASE
EMITTER
COLLECTOR
COLLECTOR
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NSBC114EPDXV6/D