NUD3124 Automotive Inductive Load Driver This MicroIntegration part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. http://onsemi.com Features • Provides Robust Interface between D.C. Relay Coils and Sensitive • • • • MARKING DIAGRAMS Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs 3 JW6 D 1 2 SOT−23 CASE 318 STYLE 21 Typical Applications JW6 = Specific Device Code D = Date Code • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays JW6 D 6 Benefits • • • • 1 Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications SC−74 CASE 318F STYLE 7 JW6 = Specific Device Code D = Date Code INTERNAL CIRCUIT DIAGRAMS Drain (3) Gate (1) Gate (2) 10 k 100 K Drain (3) Drain (6) 100 K 100 K Source (2) Source (4) Source (1) CASE 318 Gate (5) 10 k 10 k CASE 318F ORDERING INFORMATION Device NUD3124LT1 NUD3124DMT1 Semiconductor Components Industries, LLC, 2003 August, 2003 − Rev. 5 1 Package Shipping SOT−23 3000/Tape & Reel SC−74 3000/Tape & Reel Publication Order Number: NUD3124/D NUD3124 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 28 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 or Higher) (TJ Initial = 85°C) 250 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 , T = 200 ms) (For Relay’s Coils/Inductive Loads of 80 or Higher) (TJ Initial = 85°C) 80 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 , T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 , T = 50 s) (For Relay’s Coils/Inductive Loads of 80 or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V 2,000 V Value Unit ESD 1. 2. 3. 4. Rating Human Body Model (HBM) According to EIA/JESD22/A114 Specification Nonrepetitive current square pulse 1.0 ms duration. For different square pulse durations, see Figure 2. Nonrepetitive load dump suppressed pulse per Figure 3. For relay’s coils/inductive loads higher than 80 , see Figure 4. THERMAL CHARACTERISTICS Symbol Rating TA Operating Ambient Temperature −40 to 125 °C TJ Maximum Junction Temperature 150 °C −65 to 150 °C TSTG Storage Temperature Range PD Total Power Dissipation (Note 5) Derating above 25°C SOT−23 225 1.8 mW mW/°C PD Total Power Dissipation (Note 5) Derating above 25°C SC−74 380 1.5 mW mW/°C SOT−23 SC−74 556 329 °C/W RJA Thermal Resistance Junction–to–Ambient (Note 5) 5. Mounted onto minimum pad board. http://onsemi.com 2 NUD3124 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit VBRDSS 28 34 38 V − − − − − − − − 0.5 1.0 50 80 − − − − − − − − 60 80 90 110 1.3 1.3 1.8 − 2.0 2.0 − − − − − − − − 1.4 1.7 0.8 1.1 150 140 200 − − − gFS − 500 − mmho Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Ciss − 32 − pf Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Coss − 21 − pf Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Crss − 8.0 − pf tPHL tPLH − − 890 912 − − tPHL tPLH − − 324 1280 − − tf tr − − 2086 708 − − tf tr − − 556 725 − − OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 28 V, VGS = 0 V) (VDS = 28 V, VGS = 0 V, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) IGSS A A ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) VGS(th) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) RDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C) IDS(on) Forward Transconductance (VDS = 12 V, ID = 150 mA) V mA DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) ns ns Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) http://onsemi.com 3 NUD3124 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VCC Vin 50% GND tPLH tPHL VZ VCC 90% 50% 10% Vout GND tr tf Figure 1. Switching Waveforms Ppk, PEAK SURGE POWER (W) 25 20 15 10 5 0 1 10 100 PW, PULSE WIDTH (ms) Figure 2. Maximum Non−repetitive Surge Power versus Pulse Width Load Dump Pulse Not Suppressed: VR = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% TR = 1 − 10 ms ±10% Load Dump Pulse Suppressed: NOTE: Max. Voltage DUT is exposed to is NOTE: approximately 45 V. VS = 30 V ±20% T = 150 ms ±20% TR 90% 10% of Peak; Reference = VR, IR 10% VR, IR Figure 3. Load Dump Waveform Definition http://onsemi.com 4 VS T NUD3124 14 IDSS, DRAIN LEAKAGE (A) VS, LOAD DUMP (VOLTS) 140 120 100 80 60 140 170 200 230 260 290 320 350 VDS = 28 V 8 6 4 2 −25 0 25 50 100 75 RELAY’S COIL () TJ, JUNCTION TEMPERATURE (°C) Figure 4. Load Dump Capability versus Relay’s Coil dc Resistance Figure 5. Drain−to−Source Leakage versus Junction Temperature 125 34.8 BVDSS BREAKDOWN VOLTAGE (V) 80 IGSS GATE LEAKAGE (A) 10 0 −50 40 80 110 12 70 60 VGS = 5 V 50 40 VGS = 3 V 30 20 −50 1 −25 0 25 75 50 100 34.6 34.4 34.2 ID = 10 mA 34.0 33.8 33.6 33.4 −50 125 −25 25 0 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate−to−Source Leakage versus Junction Temperature Figure 7. Breakdown Voltage versus Junction Temperature 1 VGS = 5 V VGS = 3 V VGS = 2.5 V ID DRAIN CURRENT (A) ID DRAIN CURRENT (A) 0.1 0.01 VGS = 2 V 1E−04 125 °C 0.01 0.001 85 °C 1E−04 1E−06 1E−08 25 °C 1E−05 VGS = 1 V −40 °C 1E−06 1E−10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1E−07 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 8. Output Characteristics Figure 9. Transfer Function http://onsemi.com 5 4.5 5.0 1800 ID = 0.25 A VGS = 3.0 V 1600 1400 1200 ID = 0.15 A VGS = 3.0 V 1000 800 ID = 0.15 A VGS = 5.0 V 600 400 −50 −25 0 25 50 100 75 125 TJ, JUNCTION TEMPERATURE (°C) Figure 10. On Resistance Variation versus Junction Temperature RDS(ON), DRAIN−TO−SOURCE RESISTANCE () RDS(ON), DRAIN−TO−SOURCE RESISTANCE (m) NUD3124 0.20 0.18 ID = 250 A 0.16 0.14 0.12 125 °C 0.10 85 °C 25 °C −40 °C 0.08 0.06 0.04 0.02 0.00 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 11. On Resistance Variation versus Gate−to−Source Voltage VZ ZENER CLAMP VOLTAGE (V) 36.0 35.5 35.0 34.5 34.0 −40 °C 25 °C 85 °C 33.5 33.0 125 °C 32.5 32.0 0.1 1.0 10 100 1000 IZ, ZENER CURRENT (mA) Figure 12. Zener Clamp Voltage versus Zener Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW t1 t2 DUTY CYCLE = t1/t2 SINGLE PULSE 0.1 PERIOD 1.0 10 100 1000 10,000 t1, PULSE WIDTH (ms) Figure 13. Transient Thermal Response for NUD3124LT1 http://onsemi.com 6 100,000 1,000,000 NUD3124 APPLICATIONS INFORMATION 12 V Battery − + NC NO Relay, Vibrator, or Inductive Load Drain (3) Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3124 Source (2) Figure 14. Applications Diagram http://onsemi.com 7 NUD3124 INFORMATION FOR USING THE SOT−23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. The 556°C/W for the SOT−23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT−23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 0.037 0.95 0.037 0.95 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT−23 SOT−23 POWER DISSIPATION The power dissipation of the SOT−23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT−23 package, PD can be calculated as follows: PD = TJ(max) − TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C − 25°C 556°C/W * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. = 225 milliwatts http://onsemi.com 8 NUD3124 INFORMATION FOR USING THE SC-74 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process. 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm SC-74 SC-74 POWER DISSIPATION one can calculate the power dissipation of the device which in this case is 380 milliwatts. The power dissipation of the SC-74 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SC-74 package, PD can be calculated as follows: PD = PD = 150°C − 25°C = 380 milliwatts 329°C/W The 329°C/W for the SC-74 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 380 milliwatts. There are other alternatives to achieving higher power dissipation from the SC-74 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) − TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, SOLDER STENCIL GUIDELINES SC-59, SC-74, SC-70/SOT-323, SOD-123, SOT-23, SOT-143, SOT-223, SO-8, SO-14, SO-16, and SMB/SMC diode packages, the stencil opening should be the same as the pad size or a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the http://onsemi.com 9 NUD3124 SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 −189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 15 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows STEP 1 PREHEAT ZONE 1 RAMP" 200°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" STEP 4 HEATING ZONES 3 & 6 SOAK" STEP 5 HEATING ZONES 4 & 7 SPIKE" STEP 6 VENT 205° TO 219°C PEAK AT SOLDER JOINT 170°C DESIRED CURVE FOR HIGH MASS ASSEMBLIES 160°C 150°C 150°C 140°C 100°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 15. Typical Solder Heating Profile http://onsemi.com 10 STEP 7 COOLING NUD3124 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 B 2 V S DIM A B C D G H J K L S V G C H D K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SC−74 CASE 318F−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. A L 6 5 4 2 3 B S 1 D G M J C 0.05 (0.002) H K http://onsemi.com 11 DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0 10 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0 10 2.50 3.00 NUD3124 Thermal Clad is a registered trademark of the Bergquist Company MicroIntegration is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800−282−9855 Toll Free USA/Canada http://onsemi.com 12 NUD3124/D