NUR30Q Quad Schottky Barrier Diodes Array These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features: 30 VOLT QUAD SCHOTTKY DIODES ARRAY • Very Low Forward Voltage • Guard Ring Protected • Ultra Small SMD Package Typical Applications: • Ultra High−Speed Switching • Low Current Rectification • Low Power Consumption Applications (e.g. Hand−Held Devices) 1 5 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 3 Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 385 3.1 mW mW/°C Forward Current (DC) IF 200 mA Junction Temperature TJ 125 °C 4 MARKING DIAGRAM 4 SC−88A/SOT−353 CASE 419A STYLE 9 5 R9 1 1 5 D Symbol Rating 2 3 R9 = Device Marking D = One Digit Date Code ORDERING INFORMATION Device Package Shipping† NUR30QW5T1 SC−88A 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 1 1 Publication Order Number: NUR30Q/D NUR30Q ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 10 20 pF Reverse Leakage (VR = 10 V) IR − 1.5 30 Adc Forward Voltage (IF = 0.1 mAdc) VF − 0.15 0.19 Vdc Forward Voltage (IF = 1.0 mAdc) VF − 0.21 0.25 Vdc Forward Voltage (IF = 10 mAdc) VF − 0.28 0.30 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.36 0.41 Vdc Forward Voltage (IF = 200 mAdc) VF − 0.41 0.50 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr − 5.0 − ns Characteristic 820 Ω +10 V 2k 100 µH 0.1 µF IF tr 0.1 µF tp t IF trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) NUR30Q IR, REVERSE CURRENT (mA) 10 100 TA = 1 25°C 10 85°C 25°C TA = 1 25°C 1 85°C 0.1 0.01 25°C 0.001 0.0001 1 0 0.1 0.2 0.3 5 0 0.5 0.4 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Current as a Function of Forward Voltage; Typical Values 25 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current as a Function of Reverse Voltage; Typical Values 20 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 f = 1 MHz TA = 25°C 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance as a Function of Reverse Voltage; Typical Values http://onsemi.com 3 30 30 NUR30Q PACKAGE DIMENSIONS SC−88A (SOT−353) CASE 419A−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G 5 4 DIM A B C D G H J K N S −B− S 1 2 3 D 5 PL 0.2 (0.008) M B M N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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