Preliminary Application Note Usage and Applications of µPC8172TB/µPC8187TB 2.5 GHz Silicon Frequency Up-Converter IC for Mobile Communication Document No. P14822EJ2V0AN00 (2nd edition) Date Published July 2001 N CP(K) © Printed in Japan 2000, 2001 [MEMO] 2 Preliminary Application Note P14822EJ2V0AN NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. The information in this document will be updated without notice. This document introduces general applications of this product. The application circuits and circuit constants in this document are examples and not intended for use in actual mass production design. In addition, please take note that restrictions of the application circuit or standardization of the application circuit characteristics are not intended. Especially, characteristics of high-frequency ICs change depending on the external components and mounting pattern. Therefore, the external circuit constants should be determined based on the required characteristics on your planned system referring to this document, and characteristics should be checked before using these ICs. • The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M5 98. 8 The mark shows major revised points. Preliminary Application Note P14822EJ2V0AN 3 CONTENTS 1. PREFACE .......................................................................................................................................... 5 2. PRODUCT OVERVIEW .................................................................................................................... 2.1 Product Overview .................................................................................................................... 2.2 Manufacturing Process........................................................................................................... 2.3 Differences with the Existing Product................................................................................... 5 5 6 7 3. INTERNAL CIRCUIT CONFIGURATION........................................................................................ 8 4. EXTERNAL CIRCUIT CONFIGURATIONS .................................................................................... 4.1 Impedance Matching at RF Output ........................................................................................ 4.2 Input Impedance Matching ..................................................................................................... 4.3 Bypass Capacitor .................................................................................................................... 9 9 9 9 5. APPLICATION CHARACTERISTICS .............................................................................................. 16 5.1 Operation Rise/Fall Times ...................................................................................................... 16 6. CONCLUSION ................................................................................................................................... 20 Precautions for design-ins (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance. All the ground pins must be connected as shortly as possible to decrease impedance difference (to prevent malfunction or undesired oscillation). (3) The bypass capacitor should be attached to the VCC pin. (4) The RF output pin connects parallel inductors of an external LC matching circuit to VCC to apply a bias and RF load. (5) A DC cut capacitor must be each attached to the input pins and external adjustment of pin voltages is prohibited for input pins. See the product's data sheet for more detailed caution points and descriptions of electrical specifications. µPC8172TB Data Sheet (Document No.: P14729E) µPC8187TB Data Sheet (Document No.: P15106E) 4 Preliminary Application Note P14822EJ2V0AN 1. PREFACE In 1995, PDC (Personal Digital Cellular) services were launched in Japan, and PHS (Personal Handyphone System) services were started soon afterward. As of February 2001, Japan's cell phone subscriptions totaled about 59.5 million, indicating that almost half (47.2 percent) of the people in Japan has a call phone. PHS subscriptions alone totaled over 5.8 million, which represents about 4.6 percent of the nation's population. Since mobile telephones use high frequencies, a frequency-raising function is needed for signal transmission. Methods for raising the frequency include direct modulation methods (such as the direct modulation method and the RF modulation method), in which a signal is increased to the transmission frequency and then the frequency is modulated, and indirect modulation methods (such as the up-converter method and the IF modulation method), in which the frequency of a pre-modulated signal is raised to obtain the transmission frequency. converters are used in all of these methods. Frequency up- NEC has developed silicon monolithic ICs as core products for frequency up-converters used with any of the above frequency modulation methods, and has added the new µPC8172TB and µPC8187TB to its product series. This Application Note describes usage and applications of these new products. 2. PRODUCT OVERVIEW 2.1 Product Overview The µPC8172TB and µPC8187TB are process-renewal products that have the same circuit configuration as the existing µPC8106 and µPC8163TB respectively but are produced using the latest manufacturing process. These products are manufactured by using NEC's proprietary "UHS0" (Ultra High Speed Process) silicon bipolar process with fmax = 30 GHz. The pin layout is the same as that of the existing product. The product series uses only 6-pin super minimold (2012 size) packages with C3A or C3G for the µPC8172TB or µPC8187TB marking respectively. Figure 2-1 shows a package drawing of the 6-pin super minimold. Figure 2-1. Package Drawing of 6-pin Super Minimold (Unit: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 1.3 0.65 2.0±0.2 1.25±0.1 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. Preliminary Application Note P14822EJ2V0AN 5 2.2 Manufacturing Process The µPC8172TB and µPC8187TB are manufactured by using NEC's proprietary "UHS0" silicon bipolar process. The features of this process are briefly described below. <1> Realizes a high fT (gain-bandwidth product) of 25 GHz by making the transistor base width approximately 1/3 that of the conventional "NESAT™ III" process. <2> Realizes high gain creation by making the transistor's collector base capacitance less than 1/2 that of the conventional "NESAT III" process. These features enable an IC having superior electrical characteristics to be created. 6 Preliminary Application Note P14822EJ2V0AN 2.3 Differences with the Existing Product Since the latest "UHS0" process, which produces superior electrical characteristics, is used for the µPC8172TB and µPC8187TB, the major characteristics are better than those of the existing product, which is produced using the conventional "NESAT III" process. In particular, use of the high fT process has raised the operating frequency to a maximum of 2.5 GHz from the previous maximum of 2.0 GHz. Also, distortion characteristics, which are considered extremely important in the latest mobile communication terminals, are better than the existing product, with the equivalent circuit current. These improvements enable the µPC8172TB and µPC8187TB to be used not only for mobile communication terminals, but also for wireless LANs and a broad range of other applications. They also increase the degrees of freedom for chip set configurations. Table 2-1 lists NEC's line-up of high-frequency up-converter ICs. Table 2-1. NEC's Line-up of Frequency Up-Converter ICs Part Number µPC8106T Supply Voltage VCC (V) Circuit Current ICC (mA) RF output Frequency fRFout (GHz) 2.7 to 5.5 9 0.4 to 2.0 Conversion Gain 1 Conversion Gain 2 Conversion Gain 3 CG1 (dB) CG2 (dB) CG3 (dB) µPC8106TB µPC8109T 7 − 7 5 − 6 4 10 9 2.7 to 5.5 5 0.4 to 2.0 µPC8109TB µPC8163TB 2.7 to 3.3 16.5 0.8 to 2.0 9 5.5 − µPC8172TB 2.7 to 3.3 9 0.8 to 2.5 9.5 8.5 8.0 µPC8187TB 2.7 to 3.3 15 0.8 to 2.5 11 11 10 Part Number µPC8106T Maximum Maximum Maximum Output Power 1 Output Power 2 Output Power 3 PO(sat)2 (dBm) PO(sat)3 (dBm) PO(sat)1 (dBm) Output IP31 OIP31 (dBm) Output IP32 OIP32 (dBm) Output IP33 OIP33 (dBm) Process NESAT III −2 −4 − +5.5 +2.0 − −6 −8 − +1.5 −1.0 − µPC8109TB −5.5 −7.5 µPC8163TB +0.5 −2 − +9.5 +6.0 − µPC8172TB +0.5 0 −0.5 +7.5 +6.0 +4.0 µPC8187TB +4 +2.5 +1 +10 +10 +8.5 µPC8106TB µPC8109T UHS0 TA = +25°C, VCC = VRFout = 3.0 V, ZS = ZL = 50 Ω (µPC8106T/TB, µPC8109T/TB, µPC8172TB: VPS = 3.0 V) In the various characteristics above, 1, 2, and 3 have the following meanings. 1: fRFout = 0.9 GHz (0.83 GHz for the µPC8163TB, µPC8187TB), 2: fRFout = 1.9 GHz, 3: fRFout = 2.4 GHz The above values are typical values for major characteristics. See each product's data sheet for detailed ratings, characteristic curves, etc. Preliminary Application Note P14822EJ2V0AN 7 3. INTERNAL CIRCUIT CONFIGURATION The µPC8172TB is a double-balanced mixer + bias circuit IC. The µPC8187TB has the same circuit configuration as other up-converter ICs (apart from the absence of a power-save control circuit), but features a high IP3 due to optimization of the current distribution and adjustment of the CG and IIP3. Figure 3-1 shows the internal equivalent circuit diagram. This IC includes bypass capacitors for double balanced mixer type complementary IF inputs in order to improve the AC characteristics of the 50 MHz to 400 MHz IF frequency range. This lowers the conversion gain when the IF input frequency is lower than the minimum frequency. When the IF input frequency is higher than the maximum frequency, the conversion gain is lowered according to the frequency characteristics of the internal transistors. The RF output pin is an open collector, and since there is no on-chip component that limits the lower limit of the frequency range, the user should provide an external narrow-band matching circuit for the internal transistors' frequency characteristic range (800 MHz to 2.5 GHz) to set the desired bandwidth. Since this mixer has been designed as a product for frequency up-converters, the user's determination of the desired bandwidth should be made according to the following conditions. Note with caution that this mixer's design and operation as a frequency down-converter are not guaranteed (other frequency down-converter mixer ICs are available). • Frequency condition: | fRFout – fLOin | = fIFin, fRFout, fLOin > fIFin Figure 3-1. Internal Equivalent Circuit Diagram VCC RFoutput LOinput Q3 PS 8 Q4 Q5 Q1 Q2 Q6 GND Preliminary Application Note P14822EJ2V0AN IFinput 4. EXTERNAL CIRCUIT CONFIGURATIONS 4.1 Impedance Matching at RF Output Since this IC has an open-collector output, configure an LC matching circuit for RF impedance using an external component. The matching circuit should include a parallel inductor to the VCC side and a series capacitor toward the next stage. As mentioned earlier, the bias of the output pin's collector uses the method applying the VCC pin's voltage via the inductor used for RF matching. In other words, the inductor that is connected to the output pin has two effects: its RF effect (frequency matching) and its DC effect (application of bias). This is why a small DC resistance and highfrequency type inductor should be used. The LC matching circuit constants used in the test circuits shown in the data sheet are for the NEC evaluation board. This evaluation board is used only for simple evaluations; devices evaluated using this board are not immediately suitable for application in systems. The patterns used for evaluation does not allow parts to be mounted near the IC, so the pattern size is larger. Accordingly, these are not the recommended patterns or the recommended circuit constants. The matching LC value is determined so as to produce narrow-band power gain that suits the used frequency bandwidth referencing the IC's own S-parameters. Select a value that reduces the S22 value of the RF output pin to about −20 dBm during maximum gain within the used frequency bandwidth. Examples of RF matching circuit configurations are the high-pass type at 900 MHz and the low-pass type at 1.9 GHz and 2.4 GHz. Figure 4-1 shows examples of external circuit configurations. 4.2 Input Impedance Matching The IF and LO inputs in this IC are base inputs with parallel connections to bias resistors. Although their characteristic impedance is not 50 Ω, the test circuits in the data sheet show a signal generator with a 50 Ω signal source impedance. Accordingly, the data sheet's electrical specifications include loss due to this mismatched impedance. If impedance matching is implemented in the actual circuit, the elimination of this loss raises the IC's input level, which lowers the required input level. Figure 4-2 shows S parameter values for the RF, IF, and LO ports when matching is not implemented. 4.3 Bypass Capacitor Like other ICs, this IC needs an RF bypass to GND for its VCC pin, so an external capacitor should be connected to the VCC pin as the bypass. Preliminary Application Note P14822EJ2V0AN 9 Figure 4-1. Examples of External Circuit Configurations (µPC8172TB) (1/2) When fRFout = 0.9 GHz matching RF = 0.9 GHz matching To next stage (RF filter, etc.) 100 pF IF matching Strip line L2 6 C1 RFoutput IFinput C2 From previous stage 1 C3 L1 From power supply 5 VCC GND 2 4 PS LOinput 3 100 pF From local oscillator 1 000 pF 1 µ F 68 pF 1 µ F From controller When fRFout = 1.9 GHz matching RF = 1.9 GHz matching To next stage (RF filter, etc.) 100 pF IF matching Strip line L2 6 C1 RFoutput IFinput C2 From previous stage 1 C3 L1 From power supply 5 VCC GND 2 100 pF 4 PS LOinput From local oscillator 3 1 000 pF 1 µ F 30 pF 1 µ F From controller When fRFout = 2.4 GHz matching RF = 2.4 GHz matching To next stage (RF filter, etc.) 100 pF IF matching Strip line L2 6 C1 RFoutput IFinput C2 From previous stage 1 C3 L1 From power supply 5 VCC GND 2 4 PS LOinput 3 100 pF From local oscillator 1 000 pF 1 µ F 10 pF 1 µ F From controller Remarks 1. Determine L1 and C1 according to the frequency and the RF port's S-parameter, including the strip line length on the mounting surface. 2. High-pass type output matching is used for fRFout = 0.9 GHz and low-pass type output matching is used for fRFout = 1.9 GHz and fRFout = 2.4 GHz. 3. Determine whether or not matching is required for input according to how the input relates to the previous stage's impedance. 10 Preliminary Application Note P14822EJ2V0AN Figure 4-1. Examples of External Circuit Configurations (µPC8187TB) (2/2) When fRFout = 0.83 GHz matching RF = 0.83 GHz matching To next stage (RF filter, etc.) IF matching Strip line 100 pF L2 6 L1 From power supply RFoutput IFinput C2 From previous stage 1 C3 C1 5 VCC 4 GND GND 2 LOinput 3 100 pF 10 pF 1 000 pF From local oscillator 1 000 pF When fRFout = 1.9 GHz matching RF = 1.9 GHz matching Strip line 100 pF To next stage (RF filter, etc.) IF matching L2 6 C1 RFoutput IFinput From previous stage C3 L1 From power supply C2 1 5 VCC GND 2 100 pF 10 pF 1 000 pF 4 GND LOinput 3 From local oscillator 1 000 pF When fRFout = 2.4 GHz matching RF = 2.4 GHz matching To next stage (RF filter, etc.) 100 pF IF matching Strip line L2 6 C1 RFoutput IFinput From previous stage C3 L1 From power supply C2 1 5 VCC 4 GND GND 2 LOinput 3 100 pF 10 pF 1 000 pF From local oscillator 1 000 pF Remarks 1. Determine L1 and C1 according to the frequency and the RF port's S-parameter, including the strip line length on the mounting surface. 2. High-pass type output matching is used for fRFout = 0.83 GHz and low-pass type output matching is used for fRFout = 1.9 GHz and fRFout = 2.4 GHz. 4. Determine whether or not matching is required for input according to how the input relates to the previous stage's impedance. Preliminary Application Note P14822EJ2V0AN 11 Figure 4-2. Smith Charts and S-Parameters (Without External Component) of Each Port (1/4) (a) µPC8172TB (1/2) (VCC = VPS = VRFout = 3.0 V, TA = +25°C) FREQUENCY MHz LO port S11 MAG. ANG. 400.0000 450.0000 500.0000 550.0000 600.0000 650.0000 700.0000 750.0000 800.0000 850.0000 900.0000 950.0000 1000.0000 1050.0000 1100.0000 1150.0000 1200.0000 1250.0000 1300.0000 1350.0000 1400.0000 1450.0000 1500.0000 1550.0000 1600.0000 1650.0000 1700.0000 1750.0000 1800.0000 1850.0000 1900.0000 1950.0000 2000.0000 2050.0000 2100.0000 2150.0000 2200.0000 2250.0000 2300.0000 2350.0000 2400.0000 2450.0000 2500.0000 0.918 0.919 0.913 0.907 0.900 0.892 0.888 0.881 0.875 0.867 0.858 0.853 0.849 0.841 0.841 0.823 0.819 0.812 0.805 0.796 0.786 0.779 0.773 0.767 0.757 0.743 0.743 0.737 0.730 0.729 0.718 0.711 0.701 0.687 0.678 0.663 0.657 0.649 0.640 0.630 0.622 0.618 0.609 −21.2 −22.9 −25.2 −27.6 −30.0 −32.5 −34.6 −36.8 −39.3 −41.6 −44.0 −46.2 −48.3 −50.7 −53.1 −55.5 −57.7 −59.8 −62.3 −64.5 −67.0 −69.1 −71.1 −73.5 −76.0 −78.3 −80.2 −82.0 −84.6 −86.6 −89.3 −91.9 −94.1 −96.8 −98.8 −101.0 −103.2 −104.7 −107.0 −108.8 −111.0 −112.9 −115.3 LO port S11 Z REF 1.0 Units 200.0 mUnits/ 1 21.625 Ω –91.148 Ω hp C RF port S22 MAG. ANG. −11.0 −12.2 −13.3 −14.4 −15.5 −16.6 −17.6 −18.7 −19.7 −20.7 −21.7 −22.7 −23.7 −24.7 −25.7 −26.7 −27.7 −28.7 −29.7 −30.8 −31.9 −32.7 −33.6 −34.6 −35.6 −36.6 −37.6 −38.4 −39.1 −39.9 −40.6 −41.0 −41.2 −41.6 −42.1 −42.8 −43.8 −44.8 −45.6 −46.5 −47.5 −48.4 −49.2 0.952 0.947 0.941 0.935 0.929 0.923 0.918 0.912 0.907 0.901 0.896 0.890 0.885 0.880 0.875 0.869 0.864 0.859 0.853 0.847 0.839 0.832 0.826 0.822 0.814 0.807 0.798 0.787 0.780 0.771 0.761 0.752 0.747 0.745 0.746 0.746 0.748 0.744 0.741 0.738 0.733 0.729 0.725 RF port S22 Z REF 1.0 Units 200.0 mUnits/ 1 71.5 Ω –240.34 Ω hp C MARKER 1 1.15 GHz MARKER 1 900.0 MHz D D 1 1 3 3 2 START 0.400000000 GHz STOP 2.500000000 GHz 12 START STOP Preliminary Application Note P14822EJ2V0AN 0.400000000 GHz 2.500000000 GHz 2 Figure 4-2. Smith Charts and S-Parameters (Without External Component) of Each Port (2/4) (a) µPC8172TB (2/2) (VCC = VPS = VRFout = 3.0 V, TA = +25°C) IF port S11 FREQUENCY MHz MAG. ANG. 100.0000 120.0000 140.0000 160.0000 180.0000 200.0000 220.0000 240.0000 260.0000 280.0000 300.0000 320.0000 340.0000 360.0000 380.0000 400.0000 420.0000 440.0000 460.0000 480.0000 500.0000 520.0000 540.0000 560.0000 580.0000 600.0000 620.0000 640.0000 660.0000 680.0000 700.0000 720.0000 740.0000 760.0000 780.0000 800.0000 820.0000 840.0000 860.0000 880.0000 900.0000 920.0000 940.0000 960.0000 980.0000 1000.0000 0.940 0.941 0.939 0.937 0.937 0.935 0.932 0.932 0.930 0.926 0.927 0.925 0.924 0.921 0.920 0.915 0.916 0.915 0.913 0.909 0.908 0.905 0.904 0.903 0.899 0.898 0.898 0.894 0.892 0.891 0.891 0.885 0.885 0.881 0.879 0.878 0.877 0.873 0.871 0.888 0.866 0.864 0.863 0.859 0.857 0.856 −3.3 −3.7 −4.2 −4.9 −5.6 −6.0 −6.7 −7.3 −7.9 −7.9 −8.8 −9.4 −10.3 −10.6 −11.0 −11.3 −12.1 −12.6 −12.7 −13.7 −14.2 −15.0 −15.2 −15.7 −16.3 −16.7 −17.2 −17.9 −18.2 −18.7 −19.2 −19.8 −20.2 −20.7 −21.2 −21.7 −22.2 −22.7 −23.2 −22.3 −24.2 −24.6 −25.1 −25.6 −26.0 −26.5 IF port Z S11 REF 1.0 Units 200.0 mUnits/ 1 332.63 Ω –601.34 Ω hp C MARKER 1 240.0 MHz D 1 START STOP 0.100000000 GHz 1.000000000 GHz Preliminary Application Note P14822EJ2V0AN 13 Figure 4-2. Smith Charts and S-Parameters (Without External Component) of Each Port (3/4) (b) µPC8187TB (1/2) (VCC = VRFout = 2.8 V, TA = +25°C) FREQUENCY MHz LO port S11 MAG. ANG. 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 0.864 0.862 0.852 0.845 0.840 0.837 0.827 0.815 0.812 0.804 0.807 0.807 0.793 0.784 0.771 0.770 0.763 0.757 0.752 0.746 0.741 0.723 0.715 0.708 0.694 0.677 0.659 0.645 0.627 0.620 0.606 −6.8 −11.6 −16.7 −22.3 −26.6 −32.0 −37.1 −42.0 −46.5 −51.5 −56.5 −62.1 −67.1 −71.7 −75.9 −79.2 −83.7 −88.2 −92.6 −96.7 −101.3 −105.5 −110.5 −115.4 −120.5 −125.6 −130.7 −134.1 −137.5 −140.1 −143.4 LO port Z S11 REF 1.0 Units 200.0 mUnits/ 1 22.762 Ω –104.25 Ω hp C RF port S22 MAG. ANG. −2.7 −5.8 −8.2 −11.4 −13.9 −16.2 −18.4 −20.4 −22.7 −25.4 −28.2 −30.6 −32.9 −35.2 −36.9 −39.8 −42.1 −45.2 −47.4 −49.9 −53.0 −55.8 −58.4 −60.6 −62.9 −64.9 −66.5 −68.4 −70.2 −71.4 −73.2 0.982 0.979 0.962 0.948 0.944 0.940 0.937 0.937 0.922 0.912 0.909 0.900 0.907 0.901 0.885 0.886 0.881 0.875 0.869 0.863 0.852 0.846 0.835 0.823 0.800 0.778 0.761 0.766 0.773 0.780 0.784 RF port Z S22 REF 1.0 Units 200.0 mUnits/ 1 51.172 Ω –252.0 Ω hp C MARKER 1 1.0 GHz D MARKER 1 850.0 MHz D 1 1 2 3 START STOP 14 3 2 0.100000000 GHz 3.100000000 GHz START STOP Preliminary Application Note P14822EJ2V0AN 0.100000000 GHz 3.100000000 GHz Figure 4-2. Smith Charts and S-Parameters (Without External Component) of Each Port (4/4) (b) µPC8187TB (2/2) (VCC = VRFout = 2.8 V, TA = +25°C) IF port FREQUENCY MHz MAG. S11 ANG. 100.0000 150.0000 200.0000 250.0000 300.0000 350.0000 400.0000 450.0000 500.0000 550.0000 600.0000 650.0000 700.0000 750.0000 800.0000 850.0000 900.0000 950.0000 1000.0000 0.897 0.898 0.896 0.892 0.888 0.882 0.881 0.873 0.872 0.873 0.870 0.866 0.867 0.867 0.865 0.861 0.862 0.865 0.869 −3.3 −4.6 −6.2 −7.8 −9.0 −10.6 −12.4 −13.7 −15.2 −16.8 −18.8 −20.6 −22.3 −23.7 −25.3 −26.9 −28.4 −29.9 −31.4 IF port Z S11 REF 1.0 Units 200.0 mUnits/ 1 518.97 Ω –321.09 Ω hp C MARKER 1 150.0 MHz D 1 START STOP 0.100000000 GHz 1.000000000 GHz Preliminary Application Note P14822EJ2V0AN 15 5. APPLICATION CHARACTERISTICS 5.1 Operation Rise/Fall Times The measurement of the rise and fall times at the VCC and PS pins is controlled at high speed by turning on and off the pins using a pulse pattern generator. Moreover, the time from when the output of the desired RF frequency is at the maximum level to when it is at the minimum level is set using the zero-span mode of a spectrum analyzer. Because the rise time is dependent on the DC cut capacitor, a DC cut capacitor of about 100 pF is required to obtain the same value as that in the data sheet. The measurement results are shown in Table 5-1, and the rise/fall waveforms of the µPC8172TB are shown in Figure 5-1 as a typical example. Table 5-1. Rise/Fall Times per Capacitance of DC Cut Capacitor at IF Pin • Rise time Part Number µPC8172TB µPC8187TB Capacitance of DC Cut Capacitor at IF Input Pin Control PinNote 1 000 pF 400 pF 100 pF PS 10 µs 4.5 µs 2 µs VCC 6 µs 2.5 µs 1.5 µs PS, VCC simultaneously 10 µs 4.5 µs 2 µs VCC 4 µs 2 µs 1.5 µs • Fall time Part Number µPC8172TB µPC8187TB Note • PS pin control: Capacitance of DC Cut Capacitor at IF Input Pin Control PinNote 1 000 pF 400 pF 100 pF PS 6.5 µs 2.5 µs 1.5 µs VCC 0.5 µs 0.5 µs 0.5 µs PS, VCC simultaneously 1 µs 0.5 µs 0.5 µs VCC 0.5 µs 0.5 µs 0.5 µs 3 V always applied to VCC pin (2.8 V for µPC8187TB), ON/OFF pulse waveform inserted at PS pin. • VCC pin control: 3 V always applied to PS pin (2.8 V for µPC8187TB), ON/OFF pulse waveform inserted at VCC pin. • PS, VCC pin simultaneous control: ON/OFF pulse waveform inserted at PS and VCC pins simultaneously. 16 Preliminary Application Note P14822EJ2V0AN Figure 5-1. Rise/Fall Waveforms of µPC8172TB (1/3) Measurement conditions: fIFin = 240 MHz, PIFin = −30 dBm, fLOin = 1 140 MHz, PLOin = −5 dBm (a) PS pin control • With DC cut capacitor of 1000 pF hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 10 µs Fall time Tfall = 6.5 µs CENTER 900.000 000 MHz RES BW 3 MHz • With DC cut capacitor of 400 pF VBW 3 MHz SPAN 0 Hz SWP 50 µ sec hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 4.5 µs Fall time Tfall = 2.5 µs CENTER 900.000 000 MHz RES BW 3 MHz • With DC cut capacitor of 100 pF VBW 3 MHz SPAN 0 Hz SWP 50 µ sec hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 2 µs Fall time Tfall = 1.5 µs CENTER 900.000 000 MHz RES BW 3 MHz Preliminary Application Note P14822EJ2V0AN VBW 3 MHz SPAN 0 Hz SWP 50 µ sec 17 Figure 5-1. Rise/Fall Waveforms of µPC8172TB (2/3) Measurement conditions: fIFin = 240 MHz, PIFin = −30 dBm, fLOin = 1 140 MHz, PLOin = −5 dBm (b) VCC pin control • With DC cut capacitor of 1000 pF hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 6 µs Fall time Tfall = 0.5 µs CENTER 900.000 000 MHz RES BW 3 MHz • With DC cut capacitor of 400 pF VBW 3 MHz SPAN 0 Hz SWP 50 µ sec hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 2.5 µs Fall time Tfall = 0.5 µs CENTER 900.000 000 MHz RES BW 3 MHz • With DC cut capacitor of 100 pF VBW 3 MHz SPAN 0 Hz SWP 50 µ sec hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 1.5 µs Fall time Tfall = 0.5 µs CENTER 900.000 000 MHz RES BW 3 MHz 18 Preliminary Application Note P14822EJ2V0AN VBW 3 MHz SPAN 0 Hz SWP 50 µ sec Figure 5-1. Rise/Fall Waveforms of µPC8172TB (3/3) Measurement conditions: fIFin = 240 MHz, PIFin = −30 dBm, fLOin = 1 140 MHz, PLOin = −5 dBm (c) PS/VCC pin control • With DC cut capacitor of 1000 pF hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 10 µs Fall time Tfall = 1 µs CENTER 900.000 000 MHz RES BW 3 MHz • With DC cut capacitor of 400 pF VBW 3 MHz SPAN 0 Hz SWP 50 µ sec hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 4.5 µs Fall time Tfall = 0.5 µs CENTER 900.000 000 MHz RES BW 3 MHz • With DC cut capacitor of 100 pF VBW 3 MHz SPAN 0 Hz SWP 50 µ sec hp REF 0.0 dBm ATTEN 10 dB 10 dB/ Rise time Trise = 2 µs Fall time Tfall = 0.5 µs CENTER 900.000 000 MHz RES BW 3 MHz Preliminary Application Note P14822EJ2V0AN VBW 3 MHz SPAN 0 Hz SWP 50 µ sec 19 6. CONCLUSION This Application Note has briefly described the usage and application of the µPC8172TB and µPC8187TB upconverter ICs for mobile communication terminals. We will provide more substantial data concerning these ICs through future updates of this document. 20 Preliminary Application Note P14822EJ2V0AN [MEMO] Preliminary Application Note P14822EJ2V0AN 21 [MEMO] 22 Preliminary Application Note P14822EJ2V0AN Facsimile Message From: Name Company Tel. Although NEC has taken all possible steps to ensure that the documentation supplied to our customers is complete, bug free and up-to-date, we readily accept that errors may occur. Despite all the care and precautions we've taken, you may encounter problems in the documentation. Please complete this form whenever you'd like to report errors or suggest improvements to us. FAX Address Thank you for your kind support. North America Hong Kong, Philippines, Oceania NEC Electronics Inc. NEC Electronics Hong Kong Ltd. Corporate Communications Dept. Fax: +852-2886-9022/9044 Fax: +1-800-729-9288 +1-408-588-6130 Korea Europe NEC Electronics Hong Kong Ltd. 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