Darlington Phototransistors PNA2W01M (PN207) Darlington Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Type number : Emitter mark (Black) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2.8±0.2 1.8 2.8±0.2 0.15 R0.9 0.85 ± 0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 30 mA Collector current Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 0.4±0.1 45 1.8 1.05±0.1 Small size designed for easier mounting to printed circuit board 2.2±0.15 (0.7) 2 ˚ Easy to combine with red and infrared light emitting diodes (0.7) 1 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter *1 *2 Symbol Conditions Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 2 lx*1 min 0.5 typ max 0.1 0.5 3 Unit µA mA Peak sensitivity wavelength λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 18 deg. Response time tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω 200 Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 100 lx*1 0.7 µs 1.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;; ;; 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PNA2W01M Darlington Phototransistors PC — Ta ICE(L) — VCE 60 40 20 ICE(L) (mA) 80 PC = 100mW 24 Collector photo current ICE(L) (mA) 100 L = 10 lx 16 5 lx 8 10 2 10 1 2 lx 1 lx 20 40 60 80 0 100 Ta (˚C ) 0 4 8 12 16 Collector to emitter voltage ICEO — Ta 10 2 Collector photo current 1 10 –1 10 –2 20 40 Ambient temperature 60 80 S (%) 1 Ta (˚C ) 50 40 30 20 40 80 40 0 200 120 10 5 30˚ 40˚ 50˚ 60˚ 70˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) 10 5 VCC = 10V Ta = 25˚C 104 VCC = 10V Ta = 25˚C 104 tr (µs) 60 60 tr — ICE(L) 20˚ Rise time 70 Relative sensitivity S (%) 90 0 Ambient temperature 100 80 80 tf (µs) 10˚ VCE = 10V Ta = 25˚C 20 Directivity characteristics 0˚ 10 3 L (lx) Spectral sensitivity characteristics 100 10 10 –1 – 40 100 10 2 10 Illuminance Relative sensitivity ICE(L) (mA) 10 1 VCE (V) VCE = 10V T = 2856K VCE = 10V 0 10 –1 24 ICE(L) — Ta 10 2 10 –3 – 20 20 RL = 1kΩ 103 500Ω RL = 1kΩ 103 500Ω 100Ω 100Ω 10 2 Fall time 0 Ambient temperature ICEO (µA) VCE = 10V Ta = 25˚C T = 2856K Ta = 25˚C T = 2856K 0 – 20 Dark current ICE(L) — L 10 3 32 Collector photo current Collector power dissipation PC (mW) 120 10 2 80˚ 90˚ 10 10 –2 10 –1 Collector photo current 2 1 10 ICE(L) (mA) 10 10 –2 10 –1 Collector photo current 1 10 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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