RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Description Features The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWW12001 utilizes Raytheon’s 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications. 4 mil substrate Conversion loss 10 dB (typ.) No DC bias required Chip size 1.5 mm x 2.5 mm Absolute Maximum Ratings Electrical Characteristics (At 25ºC), 50Ω system, Pin=+18 dBm Application Information Recommended Procedure for Operation Parameter Symbol RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range PIN TC Tstg Parameter Min Input Frequency Range Output Frequency Range Input Drive Power Conversion Loss Conversion Loss Variation vs. Frequency 8.5 17 +16 Typ +18 10 Value Units +22 -30 to +85 -55 to +125 dBm °C °C Max Unit Parameter 12 24 Fundamental Rejection 3rd Harmonic Rejection 4th Harmonic Rejection 5th Harmonic Rejection Input Return Loss (Pin = +18 dBm) GHz GHz dBm 12.5 dB 2 dB Min Typ Max Unit -20 -25 -25 -35 dBc dBc dBc dBc 12 dB CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. The following sequence of steps must be followed to properly test the amplifier: Step 1: The RMWW12001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input drive level. Step 2: Follow turn-off sequence of: Turn off RF input power. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Figure 1 Functional Block Diagram MMIC Chip X2 RF IN RF OUT Ground (Back of Chip) Figure 2 Chip Layout and Bond Pad Locations Dimensions in mm 0.0 1.5 2.5 Chip Size is 1.5 mm x 2.5 mm 100 µm. Back of chip is RF ground 2.5 2.345 2.2025 1.7165 1.56 1.4035 0.0 0.0 0.0 1.5 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Figure 3 Recommended Assembly Diagram Die-Attach 80Au/20Sn 5mil Thick Alumina 50-Ohm 5 mil Thick Alumina 50-Ohm RF Input RF Output 2 mil Gap L< 0.015” (4 Places) Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Performance Data Typical performance, Chip Bonded into 50 ohm Test Fixture 15.00 14.00 Conversion Loss (dB) 13.00 12.00 11.00 Pin=+16dBm Pin=+18dBm Pin=+20dBm 10.00 9.00 8.00 7.00 6.00 5.00 8 9 10 11 12 13 Input Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Performance Data (Cont’d) Typical performance, Chip Bonded into 50 ohm Test Fixture 0.00 Fundamental Rejection (dBc) -5.00 -10.00 -15.00 Pin=+16dBm Pin=+18dBm Pin=+20dBm -20.00 -25.00 -30.00 -35.00 8 9 10 11 12 13 Input Frequency (GHz) 0.00 3rd Harmonic Rejection (dBc) -5.00 -10.00 -15.00 Pin=+16dBm Pin=+18dBm Pin=+20dBm -20.00 -25.00 -30.00 -35.00 -40.00 8 9 10 11 12 13 Input Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Typical performance, Chip Bonded into 50 ohm Test Fixture Performance Data (Cont’d) 0.00 4th Harmonic Rejection (dBc) -5.00 -10.00 -15.00 Pin=+16dBm Pin=+18dBm Pin=+20dBm -20.00 -25.00 -30.00 -35.00 -40.00 8 9 10 11 12 13 Input Frequency (GHz) 30.00 Return Loss (dB) 25.00 20.00 Pin=+16dBm Pin=+18dBm Pin=+20dBm 15.00 10.00 5.00 0.00 8 9 10 11 12 13 Input Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION North America Europe D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. [email protected] Midwin & Olifison 5567 Resada Blvd, Suite 315 Tarzana, CA 91356 818-996-9093 fax: 818-996-9650 Ronald Midwin [email protected] TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected] Steward Technology 89 St. Beatrice Ct. Danville, CA 94526 408-568-9159 fax: 925-820-7481 John Steward [email protected] Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected] Hi-Peak Technical Sales P.O. 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Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee [email protected] 978-684-8900 fax: 978-684-5452 [email protected] Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810